SMC2520CSQ

SMC2520CSQ SEMTRON | Alldatasheet

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SMC2520CSQ Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units N-ch P-ch VDSS Drain-Source Voltage 20 -20 V VGSS Gate-Source Voltage ±10 ±10 V ID Continuous Drain Current TA=25°C 5 -3.3 A TA=70°C 4 -2.7 A IDM Pulsed Drain Current B 20 -13.6 A PD Power Dissipation A TA=25°C 1.3 1.3 W TA=70°C 0.8 0.8 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 95 °C/W Thermal Resistance Junction to Ambient AC Steady-State 130 ■DESCRIPTION The SMC2520CSQ is the N+P channel complementary mode power field effect transistors, used trench technology are well suited for high efficiency fast switching applications, this devices are well suited for applications in the small surface mount package. ■PART NUMBER INFORMATION 20V Complementary MOSFET SMC 2520 C SQ - TR G a b c d e f a : Company name b : Product Serial number c : Complementary d : Package code SQ: SOT-23-6L e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant ■FEATURES N-Channel VDS=20V, ID=5A RDS(ON)=30mΩ(Typ.)@VGS=4.5V RDS(ON)=38mΩ(Typ.)@VGS=2.5V RDS(ON)=50mΩ(Typ.)@VGS=1.8V P-Channel VDS=-20V, ID=-3.3A RDS(ON)=60mΩ(Typ.)@VGS=-4.5V RDS(ON)=80mΩ(Typ.)@VGS=-3.5V RDS(ON)=110mΩ(Typ.)@VGS=-1.8V ◆High-speed switching, Low On-resistance ■APPLICATIONS ◆DC/DC Converter ◆Load Switch SOT-23-6L N-ch P-ch Pin1

SMC2520CSQ Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■N-ch ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.4 0.6 1 V IGSS Gate Leakage Current VDS=0V, VGS=±10V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V, TJ=25°C 1 μA VDS=16V,VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance D VGS=4.5V, ID=4A VGS=2.5V, ID=3A VGS=1.8V, ID=2A mΩ Gfs Forward Transconductance VDS=5V, ID=4A 4 S Diode Characteristics VSD Diode Forward Voltage D IS=1A, VGS=0V 1 V IS Diode Continuous Forward Current 2.5 A Dynamic and Switching Parameters E Qg Total Gate Charge VDS=10V, VGS=4.5V, ID=5A 5.7 8 nC Qgs Gate-Source Charge 0.8 1.1 Qgd Gate-Drain Charge 1.5 2.1 Ciss Input Capacitance VDS=10V,VGS=0V, f=1MHz 305 pF Coss Output Capacitance 52 Crss Reverse Transfer Capacitance 43 td(on) Turn-On Time VDD=10V, VGEN=4.5V RG=6Ω, ID=1A 3 6 nS tr 7.8 15 td(off) Turn-Off Time 12 23 tf 5.4 10 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC2520CSQ Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■N-ch TYPICAL CHARACTERISTICS 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=1.5V VGS=2V 100 0 2 4 6 8 10 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=4.5V VGS=1.8V TA=25°C VGS=2.5V 0 1 2 3 4 5 VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=10V ID=5A 100 200 300 400 500 600 0 5 10 15 20 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C TA=25° C L

SMC2520CSQ Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■N-ch TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 25 50 75 100 125 150 ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) 10µs 1ms 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25° C 100ms 100µs DC 10ms Duty Cycle, D=t1/t2

SMC2520CSQ Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■P-ch ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.4 -0.7 -1 V IGSS Gate Leakage Current VDS=0V, VGS=±10V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-20V, VGS=0V, TJ=25°C -1 μA VDS=-16V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance D VGS=-4.5V, ID=-3.3A VGS=-2.5V, ID=-2.5A VGS=-1.8V, ID=-1.8A 110 100 130 mΩ Gfs Forward Transconductance VDS=-5V,ID=-3A 2.5 S Diode Characteristics VSD Diode Forward Voltage D IS=-1A,VGS=0V -1 V IS Diode Continuous Forward Current -3.2 A trr Reverse Recovery Time IS=-3A, dl/dt=100A/μs TJ=25°C 13.2 ns Qrr Reverse Recovery Charge 7.4 nC Dynamic and Switching Parameters E Qg Total Gate Charge VDS=-10V,VGS=-4.5V, ID=-3A 7.2 10.1 nC Qgs Gate-Source Charge 0.8 1.1 Qgd Gate-Drain Charge 2 2.8 Ciss Input Capacitance VDS=-10V,VGS=0V, f=1MHz 360 pF Coss Output Capacitance 70 Crss Reverse Transfer Capacitance 55 td(on) Turn-On Time VDD=-10V, VGEN=-4.5V, RG=3Ω, ID=-3A 4.8 9 nS tr 12.8 24 td(off) Turn-Off Time 20 38 tf 6 11 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC2520CSQ Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■P-ch TYPICAL CHARACTERISTICS 0 0.5 1 1.5 2 2.5 3 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-2.5V VGS=-1.5V VGS=-1.8V VGS=-3V 120 160 200 0 2 4 6 8 10 RDS(ON)(mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V VGS=-1.8V VGS=-2.5V TA=25°C 0.9 1.8 2.7 3.6 4.5 0 1 2 3 4 5 6 7 -VGS(V) Qg-Gate Charge(nC) Gate Charge 100 200 300 400 500 600 0 5 10 15 20 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Crss Coss 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C VDS=-10V ID=-3A

SMC2520CSQ Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■P-ch TYPICAL CHARACTERISTICS 0.4 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Normalized On-Resistance TJ-Junction Temperature(°C) Drain-Source On Resistance 0.5 1.5 2.5 3.5 25 50 75 100 125 150 -ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C VGS=-4.5V 0.01 0.1 100 0.01 0.1 1 10 100 -ID (A) Maximum Safe Operation Area -VDS Voltage (V) 1ms 10ms 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Duty=0.5 0.2 0.1 0.05 0.02 0.01 Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Switching Time Waveform Ton Toff Td(off) Tf TA=25° C 100ms 100µs DC Duty Cycle, D=t1/t2

SMC2520CSQ Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-23-6L PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A - 1.300 - 0.051 A1 0.040 0.100 0.002 0.004 A2 1.000 1.200 0.039 0.047 A3 0.550 0.750 0.022 0.030 b 0.340 0.430 0.013 0.017 b1 0.330 0.380 0.013 0.015 c 0.150 0.210 0.006 0.008 c1 0.140 0.160 0.006 0.006 D 2.720 3.120 0.107 0.123 E 2.600 3.000 0.102 0.118 E1 1.400 1.800 0.055 0.071 e 0.950 BSC 0.066 BSC L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° 0.95mm 0.8mm 2.4mm 0.63mm Recommended Land Pattern