SMC3400S

SMC3400S SEMTRON | Alldatasheet

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SMC3400S Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current A TA=25°C 6.1 A TA=70°C 4.8 A IDM Pulsed Drain Current B 24 A IAS Avalanche Current B 15 A EAS Single Pulse Avalanche energy L=0.1mH B 11 mJ PD Power Dissipation A TA=25°C 1.6 W TA=70°C 1 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 80 °C/W Thermal Resistance Junction to Ambient AC Steady-State 120 ■DESCRIPTION SMC3400S is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in -line power loss are needed in small outline surface mount package. ■PART NUMBER INFORMATION Single N-Channel MOSFET SMC 3400 S - TR G a b c d e a : Company name. b : Product Serial number. c : Package code S: SOT-23L d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant ■FEATURES VDS=30V, ID=6.1A RDS(ON)=20mΩ(Typ.)@VGS=10V RDS(ON)=23mΩ(Typ.)@VGS=4.5V RDS(ON)=27mΩ(Typ.)@VGS=2.5V ◆Fast switch ◆Low gate drive applications ◆High power and current handlingcapability ■APPLICATIONS ◆Hend-Held Instruments ◆Load Switch ◆PWM Applications S G D SOT-23L S G D

SMC3400S Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.5 0.7 1 V IGSS Gate Leakage Current VDS=0V, VGS=±12V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, TJ=25°C 1 μA VDS=24V, VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance D VGS=10V, ID=6.1A VGS=4.5V, ID=5A VGS=2.5V, ID=3.2A mΩ Gfs Forward Transconductance VDS=5V, ID=5A 11 S Diode Characteristics VSD Diode Forward Voltage D IS=1A, VGS=0V 1.0 V IS Diode Continuous Forward Current 3.1 A Dynamic and Switching Parameters E Qg Total Gate Charge VDS=15V,VGS=10V, ID=5A 15.4 21.5 nC Qg Total Gate Charge (4.5V) 7.5 10.5 Qgs Gate-Source Charge 1.3 1.8 Qgd Gate-Drain Charge 1.8 2.5 Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz 645 pF Coss Output Capacitance 63 Crss Reverse Transfer Capacitance 52 td(on) Turn-On Time VDD=15V, VGEN=10V RG=3.3Ω, ID=1A 4.7 9 nS tr 12.5 24 td(off) Turn-Off Time 28.5 54 tf 4.2 8 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC3400S Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=2V 0 2 4 6 8 10 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=4.5V VGS=10V VGS=2.5V TA=25°C 0 2 4 6 8 10 12 14 16 VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=15V ID=5A 200 400 600 800 1000 0 5 10 15 20 25 30 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.4 0.8 1.2 1.6 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C

SMC3400S Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized On_Resistance TJ-Junction Temperature(°C) Drain-Source On Resistance 25 50 75 100 125 150 ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) 10µs DC 1ms 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25° C 100ms 100µs 10ms Duty Cycle, D=t1/t2

SMC3400S Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-23L PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.000 1.300 0.039 0.049 A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.039 0.047 b 0.300 0.500 0.012 0.020 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.700 0.059 0.067 E1 2.600 3.000 0.102 0.118 e 0.950 TYP. 0.037 TYP. e1 1.900 TYP. 0.075 TYP. L1 0.250 0.550 0.010 0.022 θ 0° 8° 0° 8° 0.8mm Recommended Minimum Pad(mm) 0.8mm 1.9mm 2.4mm