SMC7002ESN

SMC7002ESN SEMTRON | Alldatasheet

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SMC7002ESN Rev.A2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current A TA=25°C 0.4 A TA=70°C 0.33 A IDM Pulsed Drain Current B 1.2 A PD Power Dissipation A TA=25°C 0.83 W TA=70°C 0.53 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient a t≦10s 150 °C/W ■DESCRIPTION SMC7002E is the N-Channel enhancement mode power field effect transistors are using trench technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in -line power loss needed in small outline surface mount package. ■PART NUMBER INFORMATION Single N-Channel MOSFET SMC 7002 E SN - TR G a b c d e f a : Company name. b : Product Serial number. c : ESD Protection d : Package code SN: SOT-23 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant ■FEATURES VDS=60V, ID=0.4A RDS(ON)=1.2Ω(Typ.)@VGS=10V RDS(ON)=1.8Ω(Typ.)@VGS=4.5V ◆Fast switch ◆ESD Protection ■APPLICATIONS ◆Hend-Held Instruments ◆Analog Switching Application. S G D SOT-23 G D S

SMC7002ESN Rev.A2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 1.6 2.5 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±10 μA IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V, TJ=25°C 1 μA VDS=48V, VGS=0V, TJ=85°C 10 RDS(ON) Drain-source On-Resistance D VGS=10V ,ID=0.4A VGS=4.5V, ID=0.2A 1.2 1.8 1.6 3 Ω Diode Characteristics VSD Diode Forward Voltage D IS=0.2A, VGS=0V 1 V IS Diode Continuous Forward Current A 0.4 A Dynamic and Switching Parameters E Qg Total Gate Charge VDS=30V, VGS=10V, ID=0.2A 1.1 nC Qgs Gate-Source Charge 0.1 Qgd Gate-Drain Charge 0.2 Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz pF Coss Output Capacitance 5.8 Crss Reverse Transfer Capacitance 3 td(on) Turn-On Time VDD=30V, VGEN=10V, RG=10Ω, ID=0.2A 2.95 6 nS tr 4 8 td(off) Turn-Off Time 11 21 tf 8 15 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in sq pad size B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≦ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC7002ESN Rev.A2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=3V VGS=2.5V VGS=4V RDS(ON)(Ω) ID-Drain Current(A) Drain-Source On Resistance VGS=10V VGS=4.5V TA=25°C VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=30V ID=0.2A 0 10 20 30 40 50 60 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.6 0.7 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.2 0.4 0.6 0.8 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C

SMC7002ESN Rev.A2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 25 50 75 100 125 150 ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.001 0.01 0.1 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) TA=25°C 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Duty=0.5 0.2 0.1 0.05 0.02 0.01 Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform Duty Cycle, D=t1/t2 300µs 1ms 10ms DC 100m s 1s

SMC7002ESN Rev.A2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-23 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP e1 1.800 2.000 0.071 0.079 L 0.550 REF. 0.022 REF. L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.8mm 0.8mm 1.9mm 2.02mm Recommended Land Pattern