STP7407

STP7407 SEMTRON | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 6

Technical content

STP7407 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■FEATURE ‹ -20V/-3.4A, RDS(ON) =88mΩ(typ.)@VGS =-4.5V ‹ -20V/-2.4A, RDS(ON) =110mΩ(typ.)@VGS =-2.5V ‹ -20V/-1.7A, RDS(ON) =150mΩ(typ.)@VGS =-1.8V ‹ Super high density cell design for extremely low RDS(ON) ‹ Exceptional on-resistance and Maximum DC current capability ‹ This is a RoHS compliance ‹ SOT-323 package design ■APPLICATIONS ‹ Power Management in Note book ‹ Portable Equipment ‹ DSC ‹ LCD Display inverter ‹ Battery Powered System ‹ DC/DC Converter ‹ Load Switch P-Channel Enhancement Mode MOSFET S D G ■DESCRIPTION The STP7407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON). This high density process is especially tailored to minimize on-state resi stance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION Gate Drain Source TOP VIEW SOT-323 P -Channel ■PART NUMBER INFORMATION Lead Plating Code G : Lead-free product. This product is Green compliant Handling Code TR : Tape&Reel Package Code J2 : SOT-323 Lead Plating Code Handling Code Package Code -20V P-Channel Enhancement Mode MOSFET STP7407XX-XX X

STP7407 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Package Shipping STP7407J2-TRG J2 SOT-323 3000 / Tape&Reel SOT※ -23 : Only available in tape and reel packaging. (A reel contains 3000 devices) G : T※ his product is RoHS compliant. ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current (T J=150°C) V GS=-4.5V -3.4 A IDM Pulsed Drain Current -6 A IS Continuous Source Current (Diode Conduction) -1.4 A PD Power Dissipation TA=25°C TA=70°C 330 210 mW TJ Operation Junction Temperature 150 °C TSTG Storage Temperatur e Range -55/150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol Parameter Min Typ Max Unit RθJA Thermal Resistance-Junction to Ambient 110 °C/W

STP7407 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=-250μA -20 V VGS(th) Gate Threshold Voltage V DS=VGS,ID=-250μA -0.4 -1.0 V IGSS Gate Leakage Current V DS=0V,VGS=±12V ±100 nA VDS=-20V,VGS=0V -1 IDSS Zero Gate Voltage Drain Current VDS=-20V,VGS=0V TJ=55°C -10 μA RDS(ON) Drain-source On-Resistance VGS=-4.5V,ID=-3.4A VGS=-2.5V,ID=-2.4A VGS=-1.8V,ID=-1.7A 110 150 125 170 mΩ Gfs Forward Transconductance V DS=-5V,ID=-2.8A 6.5 S Source-Drain Doide VSD Diode Forward Voltage I S=-1.6A,VGS=0V -0.7 -1.2 V Dynamic Parameters Qg Total Gate Charge 7 10 Qgs Gate-Source Charge 1.8 Qgd Gate-Drain Charge VDS=-10V VGS=-4.5V ID≡-3.2A 2 nC Ciss Input Capacitance 415 Coss Output Capacitance 223 Crss Reverse Transfer Capacitance VDS=-10V VGS=0V f=1MHz 87 pF td(on) 13 25 tr Turn-On Time 36 60 td(off) 42 70 tf Turn-Off Time VDD=-10V RL=10Ω ID=-1.0A VGEN=-4.5V RG=6Ω 34 60 nS Note : 1. Pulse test: pulse width <= 300us, duty cycle<= 2% 2. Static parameters are based on package level with recommended wire-bonding

STP7407 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25°C Unless Note) Output Characteris tics 012345 -VDS-Drain Source Voltage(V) -ID-Drain Current(A) VGS=1.5V VGS=1V VGS=2V VGS=2.5V VGS=3V Drain-Source On Resistance 100 150 200 250 300 350 400 012345 -VGS-Gate Source Voltage(V) RDS(mΩ) ID=-3AID=-0.6A Drain Source On Resistance 100 150 200 250 300 0369 1 2 1 5 -ID-Drain Current(A) RDS(ON)(mΩ) VGS=-4.5V VGS=-2.5V VGS=-1.8V Gate Threshold Voltage 0.3 0.6 0.9 1.2 1.5 - 5 0 - 2 5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Tj-Junction Temperature(°C) Normalized Threshold Voltage Gate Charge 01234567 G-Gate Charge(nC) -VGS(V) VDS=-10V ID=-3A Drain Source On Resistance 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 T J-Junction Temperature(°C) Normalized On Resistance VGS=-4.5V ID=-3A

STP7407 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25°C Unless Note) Source Drain Diode Forward 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 SD-Source Drain Voltage(V) -IS-Source Current(A) 25°C 150°C Capacitance 100 200 300 400 500 600 700 800 0 5 10 15 20 25 -VDS-Drain Source Voltage(V) C(pF) Coss Ciss Crss Power Dissipation 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 TJ-Junction Temperature(°C) Ptot-Power(W) Trans fer Characteris tics 00 . 511 . 522 . 53 -VGS-Gate Source Voltage(V) -ID-Drain Current(A) TJ=25°C TJ=55°C TJ=125° Therm al Transient Im pedance 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Normalized Transient Thermal Resistance Duty Cycle=0.5 0.2 0.1 0.05 0.02

STP7407 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-323 PACKAGE DIMENSIONS