STP4407A

STP4407A SEMTRON | Alldatasheet

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STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com S D G ■FEATURE  -30V/-14A, RDS(ON) =8.2mΩ(typ.)@VGS = -20V  -30V/-12A, RDS(ON) =9.2mΩ(typ.)@VGS = -10V  -30V/-10A, RDS(ON) =10.8mΩ(typ.)@VGS = -6V  -30V/-7.0A, RDS(ON) =12.5mΩ(typ.)@VGS = -4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Power Management in Note book  High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/GA  Networking DC-DC Power System  Load Switch S S D D D D S G P-Channel Fast Switching MOSFETs ■DESCRIPTION The STP4407A is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous buck converter applications. STP4407AM-TRG ROHS Compliant This is Halogen Free ■PIN CONFIGURATION ■PART NUMBER INFORMATION STP 4407A M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code -30V P-Channel Fast Switching MOSFETs SOP-8 Top View

STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Handling Code Shipping STP4407AM-TRG M : SOP-8 TR : Tape&Reel 2.5K/Reel ※ SOP-8 : Only available in tape and reel packaging. ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TA=25°C -14 A ID Continuous Drain Current, V GS=10VA TA=70°C -10 IDM Pulsed Drain Current B -50 A EAS Single Pulse Avalanche energy L=0.1mH C 100 mJ PD Power Dissipation TA=25°C TA=70°C 3.1 2.0 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol Parameter Min Typ Max Unit RθJA Thermal Resistance-Junction to Ambient 40 °C/W RθJC Thermal Resistance-Junction to Case 24 °C/W

STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage V GS =0V,ID =-250μA -30 V VGS(th) Gate Threshold Voltage V DS =VGS,ID =-250μA -1.0 -2.0 V IGSS Gate Leakage Current V DS =0V,VGS=±20V ±100 nA VDS =-24V,VGS =0V -1 IDSS Zero Gate Voltage Drain Current VDS =-24V,VGS =0V TJ =55°C -5 μA RDS(ON) Drain-source On-Resistance B VGS =-20V,ID=-14A VGS =-10V,ID=-12A VGS =-6.0V,ID=-10A VGS =-4.5V, ID=-7A 8.2 9.2 10.8 12.5 mΩ Rg Gate resistance V DS =VGS=0V, f=1MHZ 2 Ω Source-Drain Doide VSD Diode Forward Voltage I S=-2.0A,VGS=0V -0.7 -1.2 V IS Continuous Source Current AD -14 A Dynamic Parameters Qg Total Gate Charge 30 Qgs Gate-Source Charge 4.4 Qgd Gate-Drain Charge VDS =-15V,VGS =-4.5V ID =-14A 10.2 nC Ciss Input Capacitance 1580 Coss Output Capacitance 321 Crss Reverse Transfer Capacitance VDS =-15V,VGS =0V f =1MHz 250 pF td(on) 13.2 tr Turn-On Time td(off) 52 tf Turn-Off Time VDD=-15V, VGS=-10V, ID=-1A, RG=6Ω nS Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet

STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS Output Characteristics 0 0.5 1 1.5 2 2.5 3 -VDS-Drain Source Voltage(V) -ID-Drain Current(A) VGS=-4.5V Trans fer Characteris tics 0 0.2 0.4 0.6 0.8 1 -VGS-Gate Source Voltage(V) -ID-Drain Current(A) TJ=25°C TJ=150°C Drain Source On Resistance 0 4 8 1 21 62 02 42 83 2 -ID-Drain Current(A) RDS(ON)(mΩ) VGS=-20V VGS=-10.0V VGS=-6V VGS=-4.5V Gate Threshold Voltage 0.4 0.8 1.2 1.6 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) Normalized Threshold Voltage Gate Charge 0 5 10 15 20 25 30 35 Q G-Gate Charge(nC) -VGS(V) Drain Source On Resistance 0.2 0.4 0.6 0.8 1.2 1.4 1.6 - 5 0 - 2 5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 TJ-Junction Temperature(°C) Normalized On Resistance

STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS Source Drain Diode Forward 0.1 -VSD-Source Drain Voltage(V) -IS-Source Current(A) TJ=25°CTJ=125°C Capacitance 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 -VDS-Drain Source Voltage(V) C(pF) Ciss Coss Crss Power Dissipation 0.5 1.5 2.5 3.5 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) Ptot-Power(W) Drain Current 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) ID-Drain Current(A) Therm al Transient Im pedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Normalized Transient Thermal Resistance Single Pulse

STP4407A Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOP-8 PACKAGE DIMENSIONS Dimensions In Millimeter s Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.040 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 BSC 0.050 BSC L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8°