STP3415

STP3415 SEMTRON | Alldatasheet

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STP3415 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■FEATURE  -20V/-4.0A, RDS(ON) =44mΩ(typ.)@VGS =-4.5V  -20V/-4.0A, RDS(ON) =53mΩ(typ.)@VGS =-2.5V  -20V/-2.0A, RDS(ON) =66mΩ(typ.)@VGS =-1.8V  -20V/-1.0A, RDS(ON) =85mΩ(typ.)@VGS =-1.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Cellular/Portable  Load Switch Drain Source Gate P-Channel Enhancement Mode MOSFET S D G SOT-23L Top View ESD Protected : 3KV ■DESCRIPTION The STP3415 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON).low gate charge and operation with gate voltage as 1.5V This device is suitable for use as a load switch or in applications. STP3415S-TRG ROHS Compliant This is Halogen Free ■PIN CONFIGURATION ■PART NUMBER INFORMATION ST P 3415 S - TR G a b c d e f a : Company name. b : Channel type. c : Product Serial number. d : Package code e : Handling code f : Green product code -20V P-Channel Enhancement Mode MOSFET

STP3415 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Handling Code Shipping STP3415S-TRG S : SOT-23L TR : Tape&Reel 3K/Reel ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOT-23L : Only available in tape and reel packaging. ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V Continuous Drain Current (TC=25°C) A -4.0 A ID Continuous Drain Current (TC=70°C) A VGS=-8V -3.5 A IDM Pulsed Drain Current B -20 A PD Power Dissipation TA=25°C TA=70°C 1.5 0.9 W TJ Operation Junction Temperature -55 to150 °C TSTG Storage Temperature Range -55 to150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to Ambient Steady-State - 140 °C/W RθJL Thermal Resistance Junction to Lead Steady-State - 80 °C/W

STP3415 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=-250μA -20 V VGS(th) Gate Threshold Voltage V DS=VGS,ID=-250μA -0.3 -1.0 V IGSS Gate Leakage Current V DS=0V,VGS=±8V ±10 μA VDS=-20V,VGS=0V TJ=25°C -1 IDSS Zero Gate Voltage, Drain-Source Leakage Current VDS=-20V,VGS=0V TJ=55°C -5 μA RDS(ON) Drain-source On-Resistance B VGS=-4.5V,ID=-4.0A VGS=-2.5V,ID=-4.0A VGS=-1.8V,ID=-2.0A VGS=-1.5V,ID=-1.0A 110 mΩ Gfs Forward Transconductance V DS=-5V,ID=-4.0A 22 S Source-Drain Doide VSD Diode Forward Voltage I S=-1.0A,VGS=0V -0.67 -1.0 V IS Continuous Source Current AD -6 A Dynamic Parameters Qg (-4.5V) Total Gate Charge 11.1 Qgs Gate-Source Charge 3.1 Qgd Gate-Drain Charge VDS=-10V VGS=-4.5V ID≡-4.0A 2.4 nC Ciss Input Capacitance 989 Coss Output Capacitance 167 Crss Reverse Transfer Capacitance VDS=-10V VGS=0V f=1MHz 75.5 pF td(on) 712 tr Turn-On Time 1386 nS td(off) 9.1 tf Turn-Off Time VDD=-10V ID=-1A VGEN=-4.5V RG=2.5Ω μA Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

STP3415 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Output Characteris tics 012345 DS-Drain Source Voltage(V) -ID-Drain Current(A) VGS=-1.5V VGS=-2.5V VGS=-3V -4.5V VGS=-1.8V Drain-Source On Resistance 100 120 02468 -VGS-Gate Source Voltage(V) RDS(mΩ) 25°C 125°C Drain Source On Resistance 100 12468 1 0 D-Drain Current(A) RDS(ON)(mΩ) VGS=-1.8V VGS=-2.5 VGS=-4.5V VGS=-1.5V Gate Charge 022468 1 0 1 2 QG-Gate Charge(nC) -VGS(V) Drain Source Resistance 0.8 1.2 1.4 1.6 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) Normalized On Resistance VGS=-1.8V, ID=-1.8A VGS=-2.5V, ID=-2.0A VGS=-4.5V, ID=-4.0V Trans fer Characteris tics 0 0.5 1 1.5 2 2.5 GS-Gate Source Voltage(V) -ID-Drain Current(A) 25°C 125°C

STP3415 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Capacitance 200 400 600 800 1000 1200 048 1 2 1 6 2 0 -VDS-Drain Source Voltage(V) C(pF) Ciss Coss Crss Power Dissipation 0.5 1.5 2.5 3.5 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) Ptot-Power(W) Drain Current 0.5 1.5 2.5 3.5 4.5 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) ID-Drain Current(A) Therm al Transient Im pedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Normalized Transient Thermal Resistance Single Pulse Source Drain Diode Forward 0.00001 0.0001 0.001 0.01 0.1 -VSD-Source Drain Voltage(V) -IS-Source Current(A) 25° 125°C

STP3415 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-23L PACKAGE DIMENSIONS Dimensions In Millimeters D imensions In Inches Symbol Min. Max. Min. Max. A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950 BSC 0.037 BSC e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8°