STP3407S

STP3407S SEMTRON | Alldatasheet

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STP3407S Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current A TA=25°C -4.3 A TA=70°C -3.6 A IDM Pulsed Drain Current B -20 A PD Power Dissipation A TA=25°C 1.5 W TA=70°C 0.9 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 85 °C/W Thermal Resistance Junction to Ambient AC Steady-State 120 ■DESCRIPTION STP3407S is the P-Channel trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. ■PART NUMBER INFORMATION Single P-Channel MOSFET STP 3407 S - TR G a b c d e a : Company name. b : Product Serial number. c : Package code S: SOT-23L d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant ■FEATURES VDS=-30V, ID=-4.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=58mΩ(Typ.)@VGS=-4.5V ■APPLICATIONS ◆Portable Equipment ◆Power Management ◆Load Switch SOT-23L S G D S G D

STP3407S Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 -1.5 -2 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V, TJ=25°C -1 μA VDS=-24V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance D VGS=-10V, ID=-4.3A VGS=-4.5V, ID=-3A 38 68 mΩ Gfs Forward Transconductance VDS=-10V, ID=-4.3A 11 S Diode Characteristics VSD Diode Forward Voltage D IS=-1A,VGS=0V -0.7 -1 V IS Diode Continuous Forward Current -4.3 A Dynamic and Switching Parameters E Qg Total Gate Charge VDS=-15V, VGS=-10V ID=-4.3A 12.3 nC Qg Total Gate Charge(4.5V) 6 Qgs Gate-Source Charge 2.7 Qgd Gate-Drain Charge 3.1 Ciss Input Capacitance VDS=-25V, VGS=0V, f=1MHz 645 pF Coss Output Capacitance 272 Crss Reverse Transfer Capacitance 105 td(on) Turn-On Time VDD=-15V, VGEN=-10V RG=3.3Ω, ID=-4A nS tr 16.5 td(off) Turn-Off Time 22 tf 21 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

STP3407S Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-4V VGS=-2.5V VGS=-3V VGS=-3.5V VGS=-5,-6,-8,-10V -4.5V 0 2 4 6 8 10 RDS(ON)(mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V VGS=-10V TA=25°C 0 3 6 9 11 15 -VGS(V) Qg-Gate Charge(nC) Gate Charge 200 400 600 800 1000 0 5 10 15 20 25 30 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.6 0.7 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.3 0.6 0.9 1.2 1.5 1.8 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C VDS=-15V ID=-4.5A

STP3407S Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized On-Resistance TJ-Junction Temperature(°C) Drain-Source On Resistance 25 50 75 100 125 150 -ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 1000 -ID (A) Maximum Safe Operation Area - VDS Voltage (V) 1ms 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Switching Time Waveform Ton Toff Td(off) Tf TA=25° C 100ms 100µs DC 10ms Duty Cycle, D=t1/t2

STP3407S Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-23L PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.000 1.300 0.039 0.049 A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.039 0.047 b 0.300 0.500 0.012 0.020 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.700 0.059 0.067 E1 2.600 3.000 0.102 0.118 e 0.950 TYP. 0.037 TYP. e1 1.900 TYP. 0.075 TYP. L1 0.250 0.550 0.010 0.022 θ 0° 8° 0° 8° 0.8mm Recommended Minimum Pad(mm) 0.8mm 1.9mm 2.4mm