STN2300

STN2300 SEMTRON | Alldatasheet

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STN2300 Rev.1.8 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■FEATURE  20V/4.0A, RDS(ON) =22mΩ(typ.)@VGS =4.5V  20V/3.0A, RDS(ON) =27mΩ(typ.)@VGS =2.5V  20V/2.0A, RDS(ON) =37mΩ(typ.)@VGS =1.8V  Super high density cell design for extremely low Gate Charge  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Power Management in Note book  Portable Equipment  Load Switch N-Channel Enhancement Mode MOSFET S D G SOT-23 Top View ■DESCRIPTION The STN2300 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON). low gate charge and operation gate as 1.8V. This device is suitable for use as a load switch or other general applications. STN2300S-TRG ROHS Compliant This is Halogen Free ■PIN CONFIGURATION Drain Source Gate ■PART NUMBER INFORMATION ST N 2300 S - TR G a b c d e f a : Company name. b : Channel type. c : Product Serial number. d : Package code e : Handling code f : Green product code 20V N-Channel Enhancement Mode MOSFET

STN2300 Rev.1.8 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Handling Code Shipping STN2300S-TRG S : SOT-23 TR : Tape&Reel 3K/Reel ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOT-23 : Only available in tape and reel packaging. ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Continuous Drain Current (TC=25°C) A 4 A ID Continuous Drain Current (TC=70°C) A VGS=4.5V 3.2 A IDM Pulsed Drain Current B 20 A PD Power Dissipation TA=25°C TA=70°C 1.0 0.7 W TJ Operation Junction Temperature -55 to150 °C TSTG Storage Temperature Range -55 to150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to Ambient A Steady-State - 125 °C/W RθJC Thermal Resistance Junction to LeadA Steady-State - 85 °C/W

STN2300 Rev.1.8 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 20 V VGS(th) Gate Threshold Voltage V DS=VGS,ID=250μA 0.4 1.0 V IGSS Gate Leakage Current V DS=0V,VGS=±12V ±100 nA VDS=20V,VGS=0V 1 IDSS Zero Gate Voltage Drain Current VDS=20V,VGS=0V TJ=55°C 5 μA RDS(ON) Drain-source On-Resistance B VGS=4.5V,ID=4.0A VGS=2.5V,ID=3.0A VGS=1.8V,ID=2.0A mΩ Gfs Forward Transconductance V DS=5V,ID=2A 6.5 S Source-Drain Doide VSD Diode Forward Voltage I S=1.0A,VGS=0V 0.7 1.2 V IS Continuous Source Current AD 5.6 A Dynamic Parameters Qg Total Gate Charge 6.2 Qgs Gate-Source Charge 0.73 Qgd Gate-Drain Charge VDS=10V VGS=4.5V ID≡4.0A 3.3 nC Ciss Input Capacitance 440 Coss Output Capacitance 116 Crss Reverse Transfer Capacitance VDS=10V VGS=0V f=1MHz 94 pF td(on) 4.8 tr Turn-On Time 14.5 td(off) 25 tf Turn-Off Time VDD=10V ID=4.0A VGEN=4.5V RG=3.3Ω nS Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

STN2300 Rev.1.8 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS Output Characteris tics 0 0.5 1 1.5 2 2.5 3 VDS-Drain Source Voltage(V) ID-Drain Current(A) VGS=1.5V VGS=2.5V VGS=4.5VVGS=5V VGS=6V 12V Drain-Source On Resistance 0123456789 1 0 VGS-Gate Source Voltage(V) RDS(mΩ) 25℃ 125℃ ID=3A Drain Source On Resistance 02468 1 0 ID-Drain Current(A) RDS(ON)(mΩ) VGS=4.5V VGS=2.5V VGS=1.8V Gate Threshold Voltage 0.2 0.4 0.6 0.8 1.2 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) Normalized Threshold Voltage IDS=250μA Gate Charge 02468 1 0 1 2 1 4 Q G-Gate Charge(nC) VGS(V) Drain Source On Resistance 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 T J-Junction Temperature(°C) Normalized On Resistance

STN2300 Rev.1.8 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS Capacitance 100 200 300 400 500 600 700 800 0 5 10 15 20 25 -VDS-Drain Source Voltage(V) C(pF) Ciss Coss Crss Power Dissipation 0.2 0.4 0.6 0.8 1.2 1.4 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 TJ-Junction Temperature(°C) Ptot-Power(W) Drain Current 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 T J-Junction Temperature(°C) ID-Drain Current(A) Therm al Transient Im pedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Normalized Transient Thermal Resistance Single Pulse Source Drain Diode Forward 0.1 VSD-Source Drain Voltage(V) IS-Source Current(A)

STN2300 Rev.1.8 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-23 PACKAGE DIMENSIONS Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP e1 1.800 2.000 0.071 0.079 L1 0.550 REF. 0.022 REF. L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8°