SSL3.3A SS | Alldatasheet

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Technical content

www.siliconsupplies.com Die Size (Unsawn) 965 x 965 37.99 x 37.99 µm mils Anode Pad Size 851 x 851 33.5 x 33.5 µm mils Die Thickness 250 (±20) 9.84 (±0.79) µm mils Top Metal Composition Al ≥ 4µm Back Metal Composition NiTi/Ag (0.2/0.8 µm)

200 Watt, Uni-Directional TVS Diode

Silicon Transient Voltage Suppressor diode in bare die form  200W peak pulse power dissipation  Excellent clamping capabilities  Very fast response time  Metalized for Wire Bonding  High Reliability tested grades. Rev 1.0 02/12/24 Features: Die Dimensions in µm (mils)

Ordering Information

The following part suffixes apply:  No suffix - MIL-STD-750 /2073 Visual Inspection  “ H” - MIL-STD-750 /2073 Visual Inspection + MIL-PRF-38534 Class H LAT  “ K” - MIL-STD-750 /2072 Visual Inspection + MIL-PRF-38534 Class K LAT LAT = Lot Acceptance Test. For further information on LAT process flows see below. www.siliconsupplies.com\\quality\\bare-die-lot-qualification Supply Formats: Mechanical Specification  Default – Die in Waffle Pack (400 per tray capacity)  Sawn Wafer on Tape – By specific request  Unsawn Wafer – By specific request  With additional electrical sel ection – By specific request CHIP BACKSIDE IS CATHODE 851 (33.5) 965 (37.99) ANODE 250 (9.84) ANODE

www.siliconsupplies.com Electrical Characteristics TJ = 25°C unless otherwise stated Absolute Maximum Ratings TJ = 25°C unless otherwise stated PARAMETER SYMBOL VALUE UNIT Peak power dissipation 10/1000 μs waveform1 PPP 200 W Peak forward surge current, 8.3ms single half sine-wave2 IFSM 20 A ESD IEC61000-4-2 (Air)3 ESD IEC61000-4-2 (Contact)3 VESD ±30V kV Operating Temperature Range T J -55 to +150 °C Storage Temperature Range TS -65 to +200 °C Rev 1.0 02/12/24 1. Performance at die level dependent on assembly method and substrate choice. 2. Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum. 3. Tested in SOD-123FL package. REVERSE STAND-OFF VOLTAGE BREAKDOWN VOLTAGE @ IT TEST CURRENT MAX CLAMPING VOLTAGE VC @ IPP PEAK PULSE CURRENT REVERSE LEAKAGE IR @ VRRM DEVICE4 VRRM V BR(MIN) (V) V BR(MAX) (V) I T V C I PP IR V V V mA V A µA

www.siliconsupplies.com Electrical Characteristics TJ = 25°C unless otherwise stated DISCLAIMER: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind. LIFE SUPPORT POLICY: Silicon Supplies Ltd components may be used in life support devices or systems only with the express written approval of Silicon Supplies Ltd, if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.0 02/12/24 4. Suffix “A” denotes 5% tolerance of VBR REVERSE STAND-OFF VOLTAGE BREAKDOWN VOLTAGE @ IT TEST CURRENT MAX CLAMPING VOLTAGE VC @ IPP PEAK PULSE CURRENT REVERSE LEAKAGE IR @ VRRM DEVICE4 VRRM V BR(MIN) (V) V BR(MAX) (V) I T V C I PP IR V V V mA V A µA