SMCJ

SMCJ HDSEMI | Alldatasheet

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Glass passivated chip● P PP 1500W V RWM 5.0V- 440V Clamping Voltage

• SMCJ From 5.0 To 440 XXCA/XXA/XX XX SMCJ SERIES Item Symbol Unit Conditions Max Peak power dissipation P PPM W with a 10/1000us waveform 1500 Peak pulse current I PPM A with a 10/1000us waveform See Next Table Power dissipation P D W On infinite heat sink at T L =75℃ 6.5 Peak forward surge current(2) I FSM A 8.3 ms single half sine-wave unidirectional only 200 Operating junction and storage temperature range T J STG ℃ -55 to +150 Electrical Characteristics（Ta=25 Unl℃ ess otherwise specified） Item Symbol Unit Conditions Max Maximum instantaneous forward Voltage (3) V F V at 100A for unidirectional only 3.5/5.0 Thermal resistance R θJL ℃/W junction to lead 75 R θJA ℃/W junction to ambient 15 Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above T A = 25 p℃ er Fig.2. (2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal (3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V SMC

H igh Diode Semiconductor Electrical Characteristics (T A =25 unless otherwise noted)℃ Part Number (Uni) Part Number (Bi) V BR T Breakdown Voltage V BR T I R WM Maximum Reverse Leakage I R (3) (μA) V RWM Working Peak Reverse Voltage V RWM (V) IPP Maximum Reverse Surge Current IPP (2) (A) Maximum Clamping Voltage Vc @ I PP (V) Min(V) Max (V) IT (1) (mA) SMCJ5.0A SMCJ5.0CA (4)

Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor Part Number (Uni) Part Number (Bi) V BR T Breakdown Voltage V BR T I R WM Maximum Reverse Leakage I R (3) (μA) V RWM Working Peak Reverse Voltage V RWM (V) IPP Maximum Reverse Surge Current IPP (2) (A) Maximum Clamping Voltage Vc @ I PP (V) Min(V) Max (V) IT (1) (mA)

Electrical Characteristics (T A =25 unless otherwise noted)℃ H igh Diode Semiconductor Part Number (Uni) Part Number (Bi) V BR T Breakdown Voltage V BR T I R WM Maximum Reverse Leakage I R (3) (μA) V RWM Working Peak Reverse Voltage V RWM (V) IPP Maximum Reverse Surge Current IPP (2) (A) Maximum Clamping Voltage Vc @ I PP (V) Min(V) Max (V) IT (1) (mA) Notes: (1) t p ≤50ms Pulse test: t p ≤50ms (2) Surge current waveform per Fig. 3 and derated per Fig.2. (3) For bi-directional types having VWM of 10 V and less, the I R limit is doubled (4) For the bi-directional SMCJ5.0CA, the maximum V BR is 7.25 V

H igh Diode Semiconductor 04 . 0 t（ms） IPPM(%) FIG3: Pulse Waveform 150 100 3.02.01.0 TJ=25 Pulse Width(td) is defined as the Point where the Peak Current Decays to 50% of IPPM 10/1000 μs Waveform as Defined by R.E.A. tr=10μs Peak Value IPPM Half Value - IPP IPPM td 0 10 100 Number of Cycles IFSM(A) FIG5: Maximum Non-Repetitive Surge Current 200 100 TJ=TJMax. 8.3ms Single Half Sine-Wave 0.001 0.01 0.1 1 10 1000 0.1 tp(s) Rth( /W)℃ FIG4:Typical Transient Thermal Impedance 100 100 02 0 0 TJ （℃） PPP or IPP(%) FIG2: Pulse Power or Current vs. Initial Junction Temperature 100 175150125100755025 0.1μs1 μs1 0 μs 100 μs 1.0ms 10ms 0.1 td(μs) PPPM(KW) FIG1:Peak Pulse Power Rating Curve 1.0 100 不重复脉冲波形见图3 Non-Repetitive Pulse Waveform shown in Fige.3 TA=25℃ Copper Pad Areas PD(W) TL( FIG6:Steady State Power Dissipation 20025 50 75 100 125 150 175

H igh Diode Semiconductor 0.108 (2.75) 0.123 (3.25) 0.256(6.50) 0.280(7.10) 0.217(5.50) 0.240(6.10) 0.087(2.2) 0.106(2.7) 0.035(0.90) 0.055(1.40) 0.291(7.40) 0.331(8.40) 0.012(0.30) 0.007(0.17) 0.008(0.203)MAX. 6.5 3.5 1.8 SMC Suggested Pad Layout SMC

H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Devices-SMC