S9018 HDSEMI | Alldatasheet

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Marking: H igh Diode Semiconductor SOT- 23 Symbol Parameter Value Unit V Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ CLASSIFICATION OF h FE Electrical Characteristics (Ta=25℃ Unless otherwise specified） S9 018 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product Parameter Symbol Test conditions Min T yp Max U nit Collector-base breakdown voltage V (BR)CBO I C = 100 μ A, I E =0 30 V Collector-emitter breakdown voltage V (BR)CEO I C = 1mA, I B =0 15 V Emitter-base breakdown voltage V (BR)EBO I E =100 μ A, I C =0 5 V Collector cut-off current I CBO V CB =12V, I E =0 0.05 μ A Collector cut-off current I CEO V CE =12V, I B =0 0.1 μ A Emitter cut-off current I EBO V EB = 3V, I C =0 0.1 μ A DC current gain h FE(1) V CE =5V, I C = 1mA 70 190 Collector-emitter saturation voltage V CE (sat) I C =10mA, I B = 1mA 0.5 V Base-emitter saturation voltage V BE (sat) I C =10mA, I B = 1mA 1.4 V Transition frequency f T V CE =5V, I C = 5mA 400MHz

800 MHz

C CBO

H igh Diode Semiconductor Typical Characteristics 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 11 0 0.01 0.1 0.1 1 10 0.4 0.6 0.8 1.0 11 0 120 160 11 0 200 400 600 800 1000 1200 0.1 0.1 0.1 012345678 0.0 0.5 1.0 1.5 2.0 2.5 3.0 P C —— T a COLLECTOR POWER DISSIPATION P C (W) AMBIENT TEMPERATURE T a ( ) β=10 V CEsat —— I C T a =25 T a =100 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) 0.3 β=10 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) 5050 V CE =5V T a =25 T a =100 I C h FE DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) 10 20 V CE =5V T a =25 I C f T TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) f=1MHz I E =0 / I C T a =25 V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V (V) I C V CE =5V COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V) T a =100 T a =25 V BE COMMON EMITTER T a =25 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) I B =2.5uA Static Characteristic 25uA 22.5uA 20uA 17.5uA 15uA 12.5uA 10uA 7.5uA 5uA

H igh Diode Semiconductor Package Outline Dimensions SOT-23 Suggested Pad Layout SOT-23

Reel Taping Specifications For Surface Mount Devices-SOT-23 H igh Diode Semiconductor