SS12A HDSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
o
- VRRM 20V-200V
- High surge current capability
Applications
- Rectifier From 2 To 20X Marking Polarity: Color band denotes cathode SS1X H igh Diode Semiconductor SMAK Notes: pad areas SS12A THRU SS120A Item Symbol Unit Test Conditions SS SS SS SS SS SS SS 110 SS 115 SS 120 Repetitive Peak Reverse Voltage V RRM V 20 30 40 50 60 80 100 150 200 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load, TL(Fig.1) 1.0 Surge(Non-repetitive)Forward Current I FSM A 60Hz Half-sine wave ,1 cycle , Ta =25℃ 30 Junction Temperature T J Storage Temperature T STG ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified） Item Symbol Unit Test Condition SS SS SS SS SS SS SS 110 SS 115 SS 120 Peak Forward Voltage V F V I F Peak Reverse Current I RRM1 mA V RM RRM Ta =25℃ 0.5 0.2 I RRM2 Ta =100℃ 10 5.0 Thermal Resistance(Typical) R θJ-A /W℃ Between junction and ambient 88 R θJ-L Between junction and terminal 28 Maximum RMS Vo V RMS V 14 21 28 35 42 56 70 ltage 105 140
H igh Diode Semiconductor 0 50 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A) Resistive or Inductive Load (5.0mm×5.0mm)Copper Pad Areas TL( 100 0.2 0.4 0.6 0.8 1.0 25 75 125 SS12 -SS14 SS15 -SS120 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS 0.01 VF(V) 0.4 TJ=25 Pulse width=300us 1% Duty Cycle 0.1 1.0 100 SS12 -SS14 SS15 -SS16 SS18 -SS110 SS115 -SS120 0.20 FIG.4 TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(mA) 0 20 40 60 80 100 0.001 Tj=25 Tj=75 100 1.0 0.1 0.01 Tj=125 IFSM(A) 2 5 10 20 50 100 FIG2:Surge Forward Current Capadility Number of Cycles SS12 - SS14 SS15 -SS120
H igh Diode Semiconductor SMAK SMAK 0.106(2.70) 0.096(2.45) 4.12 1.8
Reel Taping Specifications For Surface Mount Devices-SMA H igh Diode Semiconductor