SF21G-SF28G HDSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

o

  • VRRM 50V-600V
  • High surge current capability

Applications

  • Rectifier Marking Polarity: Color band denotes cathode SF2XG X:From 1 to 8 Super Fast Recovery Rectifier Diode SF21G THRU SF28G Glass passivated chip ● Item Symbol Unit Conditions SF2 1G 2G 3G 4G 5G 6G 7G 8G Repetitive Peak Reverse Voltage VRRM V 50 100 150 200 300 400 500 600 Average Forward Current I F(AV) A 60HZ Half-sine wave, Resistance load,Ta=75℃ 2.0 Surge(Non-repetitive)Forward Current I FSM A 60HZ Half-sine wave,1 cycle,Ta=25℃ Junction Temperature T j ℃ -55~+150 Storage Temperature T stg ℃ -55 ~ +150 Electrical Characteristics (Ta=25℃ Unless otherwise specified) Item Symbol Unit Test Condition SF2 1G 2G 3G 4G 5G 6G 7G 8G Peak Forward Voltage VFM V IFM=2.0A 0.95 1.3 1.7 Peak Reverse Current IRRM1 μA VRM=VRRM Ta=25℃ 5 IRRM2 Ta=125℃ 150 Reverse Recovery time trr ns I F =0.5A I R =1A I RR =0.25A 35 Thermal Resistance(Typical) RθJ-A /W℃ Between junction and ambient 50 Typical junction capacitance Cj pF Measured at 1MHZ and Applied Reverse V oltage of 4.0 V .D.C. 50 30

H igh Diode Semiconductor FIG.4:TYPICAL REVERSE CHARACTERISTICS Voltage(%) IR(uA) Tj=25 Tj=125 Tj=100 0.01 0.1 0 20 40 60 80 100 1.0 100 1000 IFSM(A) Number of Cycles FIG.2 : MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 12 4 6 8 1 0 2 0 100 1.5 2. 5 100 150 FIG.1: FORWARD CURRENT DERATING CURVE IO(A S ingle Phase Half Wave 60HZ Resisteve or Inductive Load 0.375''(9.5mm) Lead Length Ta (℃) 1.0 2.0 0. 5 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.02 0.4 0.1 0.2 0.4 1.0 2.0 4.0 VF(V) SF27G-SF28G SF25G-SF26G SF21G-SF24G Ω 22 =10 Ω 10Ω 50Ω (+) (-) (+) (-) +0.5 -1.0 -0.25 FIG.5: Diagram of circuit and Testing wave form of reverse recovery time

H igh Diode Semiconductor DO-1 5 DIA Unit: in inches (millimeters) DIA 1.0(25.4) MIN 1.0(25.4) MIN

H igh Diode Semiconductor Ammo Box Packaging Specifications For Axial Lead Rectifiers