SMC9926

SMC9926 SEMTRON | Alldatasheet

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SMC9926 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■FEATURE  20V/8.0A, RDS(ON) =17mΩ(typ.)@VGS =10V  20V/7.0A, RDS(ON) =18mΩ(typ.)@VGS =4.5V  20V/6.0A, RDS(ON) =23mΩ(typ.)@VGS =2.5V  20V/2.8A, RDS(ON) =33mΩ(typ.)@VGS =1.8V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Power Management  Portable Equipment  DSC  LCD Display inverter  Battery Powered System Dual N-Channel Enhancement Mode SOP-8 Top View S1 G1 D1 D1 D2 D2 S2 G2 ■DESCRIPTION The SMC9926 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON).low gate charge and operation gate as 1.8V. This device is suitable for use as a load switch or other general applications. SMC9926M-TRG ROHS Compliant This is Halogen Free ■PIN CONFIGURATION ■PART NUMBER INFORMATION SMC 9926 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code 20V Dual N-Channel Enhancement Mode MOSFET

SMC9926 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Handling Code Shipping SMC9926M-TRG M : SOP-8 TR : Tape&Reel 2.5K/Reel ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOP-8 : Only available in tape and reel packaging. ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Continuous Drain Current (TC=25°C) A 8 A ID Continuous Drain Current (TC=70°C) A VGS=4.5V 6.5 A IDM Pulsed Drain Current B 30 A PD Power Dissipation TA=25°C TA=70°C 1.4 W TJ Operation Junction Temperature -55 to150 °C TSTG Storage Temperature Range -55 to150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to Ambient A Steady-State - 85 °C/W RθJL Thermal Resistance Junction to Lead A Steady-State - 50 °C/W

SMC9926 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 20 V VGS(th) Gate Threshold Voltage V DS=VGS,ID=250μA 0.5 0.7 1.0 V IGSS Gate Leakage Current V DS=0V,VGS=±12V ±100 nA VDS=20V,VGS=0V TJ=25°C 1 IDSS Zero Gate Voltage, Drain-Source Leakage Current VDS=20V,VGS=0V TJ=55°C 5 μA RDS(ON) Drain-source On-Resistance B VGS=10V, ID=8.0A VGS=4.5V,ID=7.0A VGS=2.5V,ID=6.0A VGS=1.8V,ID=2.8A mΩ Source-Drain Doide VSD Diode Forward Voltage I S=1.7A,VGS=0V 0.75 1.0 V IS Continuous Source Current AD 2.5 A Dynamic Parameters Qg (4.5V) Total Gate Charge 11.5 Qgs Gate-Source Charge 3.2 Qgd Gate-Drain Charge VDS=10V VGS=4.5V ID=8.0A 3.2 nC Ciss Input Capacitance 605 Coss Output Capacitance 120 Crss Reverse Transfer Capacitance VDS=10V VGS=0V f=1MHz 105 pF td(on) 4.8 tr Turn-On Time 12.2 td(off) 32 tf Turn-Off Time VDD=10V ID=1.0A VGEN=4.5V RG=6Ω nS Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC9926 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Output Characteristics V DS-Drain Source Voltage(V) ID-Drain Current(A) VGS=1.8V VGS=2.5V VGS=4.5V VGS=6V10V Drain-Source On Resistance 0123456789 1 0 1 1 1 2 VGS-Gate Source Voltage(V) RDS(mΩ) 25°C 125°C Drain Source On Resistance 100 0 2 4 6 8 1 01 21 41 6 ID-Drain Current(A) RDS(ON)(mΩ) VGS=1.8V VGS=2.5V VGS=4.5VVGS=10V Gate Threshold Voltage 0.2 0.4 0.6 0.8 1.2 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) Normalized Threshold Voltage IDS=250μA Gate Charge 02468 1 0 1 2 1 4 Q G-Gate Charge(nC) VGS(V) VDS=10V ID-8.0A Drain Source On Resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 TJ-Junction Temperature(°C) Normalized On Resistance

SMC9926 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Capacitance 200 400 600 800 1000 1200 048 1 2 1 6 2 0 -VDS-Drain Source Voltage(V) C(pF) Ciss Coss Crs s Source Drain Diode Forward 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 VSD-Source Drain Voltage(V) IS-Source Current(A) Power Dissipation 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 TJ-Junction Temperature(°C) Ptot-Power(W) Drain Current 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) ID-Drain Current(A) Therm al Transient Im pedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Normalized Transient Thermal Resistance Single Pulse TA=150°C TA=25°C TA=25°C

SMC9926 Rev.1.0 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOP-8 PACKAGE DIMENSIONS Dimensions In Millimeter s Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.040 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 BSC 0.050 BSC L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8°