SMC8810W

SMC8810W SEMTRON | Alldatasheet

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SMC8810W Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current TA=25°C 7.6 A TA=70°C 6.1 A IDM Pulsed Drain Current A 30 A PD Power Dissipation B TA=25°C 1.4 W TA=70°C 0.9 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t≦10s 90 °C/W Thermal Resistance Junction to Ambient BC Steady-State 120 ■DESCRIPTION SMC8810 is the Dual N -Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology to provide excellent R DS(ON). These devices are well suited for high efficiency fast switching applications, low in -line power loss are needed in small outline surface mount package. ■PART NUMBER INFORMATION Common-Drain Dual N-Channel MOSFET SMC 8810 W - TR G a b c d e a : Company name. b : Product Serial number. c : Package code W:TSSOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS = 20V, ID = 7.6A RDS(ON)=14.0mΩ(Typ.)@VGS=4.5V RDS(ON)=14.5mΩ(Typ.)@VGS=4.0V RDS(ON)=15.5mΩ(Typ.)@VGS=3.2V RDS(ON)=17.8mΩ(Typ.)@VGS=2.5V RDS(ON)=24.5mΩ(Typ.)@VGS=1.8V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS ◆ Power Management in Notebook Computer ◆ Portable Equipment and Battery Powered. TSSOP-8 Pin1

SMC8810W Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.4 0.6 1.0 V IGSS Gate Leakage Current VDS=0V, VGS=±12V ±10 μA IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V, TJ=25°C 1 μA VDS=16V,VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance VGS=4.5V,ID=7.6A VGS=4.0V,ID=7.0A VGS=3.2V,ID=6.5A VGS=2.5V,ID=5.5A VGS=1.8V,ID=4.0A 14.5 15.5 17.8 24.5 mΩ Gfs Forward Transconductance VDS =5V,ID=8A 25 S Diode Characteristics VSD Diode Forward Voltage IS=1A,VGS=0V 1 V IS Continuous Source Current 3.8 A Dynamic Parameters Qg Total Gate Charge VDS=10V, VGS=4.5V, ID=7.6A 7 9.8 nC Qgs Gate-Source Charge 0.6 0.8 Qgd Gate-Drain Charge 2.2 3.1 Ciss Input Capacitance VDS=10V, VGS=0V, f =1MHz 790 pF Coss Output Capacitance 110 Crss Reverse Transfer Capacitance 68 td(on) Turn-On Time VDD=10V, VGEN=4.5V, RG=6Ω, ID=1A 5.4 10 nS tr 14 27 td(off) Turn-Off Time 18 34 tf 4 8 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. B. Measure the value in a still air environment at TA=25°C, using an installation mounted on a 1 in2 FR-4 board, maximum junction temperature TJ(MAX)=150°C. C. TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC8810W Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics 3, 3.5, 4, 4.5V VGS=2V VGS=1.5V L 0 2 4 6 8 10 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=2.5V TA=25°C VGS=4.5V VGS=3.2V VGS=1.8V 0.5 1.5 2.5 3.5 4.5 0 1 2 3 4 5 6 7 VGS(V) Qg-Gate Charge(nC) Gate Charge 200 400 600 800 1000 0 5 10 15 20 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.3 0.6 0.9 1.2 1.5 1.8 0 25 50 75 100 125 150 Ptot-Power(W) TA-Junction Temperature(°C) Power Dissipation VDS=10V ID=7.7A

SMC8810W Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Normalized On Resistance TJ-Junction Temperature(°C) RDS(ON) vs Junction Temperature 25 50 75 100 125 150 ID-Drain Current(A) TJ-Case Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) 100µs 10µs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform DC 100ms TA=25°C 1ms 10ms Duty Cycle, D=t1/t2

SMC8810W Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TSSOP-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.200 0.047 A1 0.050 0.150 0.002 0.006 A2 0.800 1.050 0.031 0.041 b 0.190 0.300 0.007 0.012 c 0.090 0.200 0.004 0.008 D 2.900 3.100 0.114 0.122 E 6.200 6.600 0.244 0.260 E1 4.300 4.500 0.169 0.177 e 0.650 REF 0.026 REF L 0.450 0.750 0.018 0.030 θ 0° 8° 0° 8°