SMC8810A

SMC8810A SEMTRON | Alldatasheet

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SMC8810AW Rev.1.2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■FEATURE  20V/7.0A, RDS(ON) =14.5mΩ(typ.)@VGS =4.5V  20V/7.0A, RDS(ON) =15mΩ(typ.)@VGS =4.0V  20V/6.5A, RDS(ON) =16mΩ(typ.)@VGS =3.2V  20V/5.5A, RDS(ON) =19mΩ(typ.)@VGS =2.5V  20V/5.0A, RDS(ON) =26mΩ(typ.)@VGS =1.8V  ESD protection± 2KV  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Load Switch  Portable Equipment  Battery Powered System TSSOP-8 Top View D G S S G S S D S D G ■DESCRIPTION The SMC8810A is the Single N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. advanced trench technology to provide excellent R DS(ON). This high densit y process is especially tailored to minimize on-state resi stance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in small outline surface mount package. It is ESD protected. SMC8810AW-TRG ROHS Compliant This is Halogen Free ■PIN CONFIGURATION ■PART NUMBER INFORMATION a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code SMC 8810A W - TR G a b c d e 20V N-Channel Enhancement Mode MOSFET

SMC8810AW Rev.1.2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Handling Code Shipping SMC8810AW-TRG W : TSSOP-8 TR : Tape&Reel 3K/Reel ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ TSSOP-8 : Only available in tape and reel packaging. ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Continuous Drain Current (TC=25°C) A 7.0 A ID Continuous Drain Current (TC=70°C) VGS=4.5V 5.8 A IDM Pulsed Drain Current B 30 A PD Power Dissipation TA=25°C TA=70°C 1.5 1.0 W TJ Operation Junction Temperature -55 to150 °C TSTG Storage Temperature Range -55 to150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to Ambient A Steady-State - 120 °C/W RθJL Thermal Resistance Junction to Lead A Steady-State - 75 °C/W

SMC8810AW Rev.1.2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 20 V VGS(th) Gate Threshold Voltage V DS=VGS,ID=250μA 0.75 1.0 V IGSS Gate Leakage Current V DS=0V,VGS=±8V ±10 μA VDS=16V,VGS=0V TJ=25°C 1 IDSS Zero Gate Voltage, Drain-Source Leakage Current VDS=16V,VGS=0V TJ=75°C 5 μA RDS(ON) Drain-source On-Resistance B VGS=4.5V,ID=7.0A VGS=4.0V,ID=7.0A VGS=3.2V,ID=6.5A VGS=2.5V,ID=5.5A VGS=1.8V,ID=5.0A 14.5 mΩ Gfs Forward Transconductance V DS=5V,ID=6.5A 27 S Source-Drain Doide VSD Diode Forward Voltage I S=1.0A,VGS=0V 0.75 1.0 V IS Continuous Source Current AD 6.5 A Dynamic Parameters Qg (4.5V) Total Gate Charge 16 Qgs Gate-Source Charge 1.7 Qgd Gate-Drain Charge VDS=10V VGS=4.5V ID≡7.0A 6 nC Rg Gate Resistance V GS=0V,VDS=0V,F=1MHz 1.2 Ω Ciss Input Capacitance 1120 Coss Output Capacitance 212 Crss Reverse Transfer Capacitance VDS=10V VGS=0V f=1MHz 198 pF td(on) 6.6 13.5 tr Turn-On Time 12 20 td(off) 63 115 tf Turn-Off Time VDs=10V ID=7A VGEN=4.5V RG=3.3Ω 30 58 nS Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TC=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC8810AW Rev.1.2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Output Characteris tics 00 . 511 . 522 . 5 V DS-Drain Source Voltage(V) ID-Drain Current(A) VGS=1.8V VGS=2.5V VGS=4.5V VGS=3.2V TC=25°C Drain-Source On Resistance VGS-Gate Source Voltage(V) ID-Drain Current(A) TJ=25°C TJ=125°C TJ=-55°C Trans fer Characteris tics 048 1 2 1 6 2 0 ID-Drain Current(A) RDS(ON)(mΩ) VGS=4.5V VGS=2.5V VGS=1.8V Gate Threshold Voltage 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) Normalized Threshold Voltage IDS=250μA Gate Charge 0123456789 1 0 QG-Gate Charge(nC) VGS(V) Drain Source On Resistance 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 TJ-Junction Temperature(°C) Normalized On Resistance

SMC8810AW Rev.1.2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Capacitance 300 600 900 1200 1500 1800 0 5 10 15 20 VDS-Drain Source Voltage(V) C(pF) Ciss Coss Crss Source Drain Diode Forward 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 V SD-Source Drain Voltage(V) IS-Source Current(A) TJ=25°C TJ=125°C Power Dissipation 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 TJ-Junction Temperature(°C) Ptot-Power(W) Drain Current 02 55 07 5 1 0 0 1 2 5 1 5 0 TC-Case Temperature(°C) ID-Drain Current(A) VGS=4.5V Therm al Transient Im pedance 0.01 0.1 Square Wave Pulse Duration(Sec) Normalized Transient Thermal Resistance Single Pulse

SMC8810AW Rev.1.2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TSSOP-8 PACKAGE DIMENSIONS