SMC8205AW SEMTRON | Alldatasheet

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SMC8205AW Rev.2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■FEATURE  20V/6.0A, RDS(ON) =21mΩ(typ.)@VGS =4.5V  20V/5.2A, RDS(ON) =25mΩ(typ.)@VGS =2.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System N-Channel Enhancement Mode MOSFET TSSOP-8 Top View ■DESCRIPTION The SMC8205AW is the Dual N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. advanced trench technology to provide excellent R DS(ON). This high density process is especially tailored to minimize on-state resi stance. These devices are particularly suited for low voltage application , and low in-line power loss are needed in small outline surface mount package. SMC8205AW-TRG ROHS Compliant This is Halogen Free ■PIN CONFIGURATION ■PART NUMBER INFORMATION a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code SMC 8205A W - TR G a b c d e 20V N-Channel Enhancement Mode MOSFET

SMC8205AW Rev.2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Handling Code Shipping SMC8205AW-TRG W : TSSOP-8 TR : Tape&Reel 3K/Reel ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ TSSOP-8 : Only available in tape and reel packaging. ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V Continuous Drain Current (TC=25°C) A 6.0 A ID Continuous Drain Current (TC=70°C) VGS=4.5V 5.0 A IDM Pulsed Drain Current B 20 A PD Power Dissipation TA=25°C TA=70°C 1.5 1.0 W TJ Operation Junction Temperature -55 to150 °C TSTG Storage Temperature Range -55 to150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to Ambient A Steady-State - 100 °C/W RθJL Thermal Resistance Junction to Lead A Steady-State - 75 °C/W

SMC8205AW Rev.2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 20 V VGS(th) Gate Threshold Voltage V DS=VGS,ID=250μA 0.5 0.7 1.2 V IGSS Gate Leakage Current V DS=0V,VGS=±12V ±100 nA VDS=16V,VGS=0V TJ=25°C 1 IDSS Zero Gate Voltage, Drain-Source Leakage Current VDS=16V,VGS=0V TJ=55°C 5 μA RDS(ON) Drain-source On-Resistance B VGS=4.5V,ID=6.0A VGS=2.5V,ID=5.2A 28 mΩ Gfs Forward Transconductance V DS=15V,ID=3.6A 10 S Source-Drain Doide VSD Diode Forward Voltage I S=1.0A,VGS=0V 0.75 1.0 V IS Continuous Source Current AD 10 A Dynamic Parameters Qg (4.5V) Total Gate Charge 17 Qgs Gate-Source Charge 0.7 Qgd Gate-Drain Charge VDS=10V VGS=4.5V ID≡6.0A 3.4 nC Ciss Input Capacitance 850 Coss Output Capacitance 142 Crss Reverse Transfer Capacitance VDS=10V VGS=0V f=1MHz 112 pF td(on) 6.5 tr Turn-On Time td(off) 32 tf Turn-Off Time VDD=10V ID=6A VGEN=4.5V RG=3.3Ω 7.3 nS Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TC=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC8205AW Rev.2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Output Characteristics 0 0.5 1 1.5 2 2.5 VDS-Drain Source Voltage(V) ID-Drain Current(A) VGS=1.8V VGS=2.5V VGS=4.5V VGS=3.7V TC=25°C Drain-Source On Resistance VGS-Gate Source Voltage(V) ID-Drain Current(A)TJ=25°C TJ=125°C TJ=55°C Trans fer Characteris tics 048 1 2 1 6 2 0 I D-Drain Current(A) RDS(ON)(mΩ) VGS=4.5V VGS=2.5V Gate Threshold Voltage 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) Normalized Threshold Voltage IDS=250μA Gate Charge 0 5 10 15 20 25 30 QG-Gate Charge(nC) VGS(V) Drain Source On Resistance 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 - 5 0 - 2 5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 TJ-Junction Temperature(°C) Normalized On Resistance

SMC8205AW Rev.2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Capacitance 200 400 600 800 1000 1200 0 5 10 15 20 VDS-Drain Source Voltage(V) C(pF) Ciss Coss Crss Source Drain Diode Forward 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 V SD-Source Drain Voltage(V) IS-Source Current(A) TJ=25°C TJ=150°C Power Dissipation 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) Ptot-Power(W) Drain Current 0 20 40 60 80 100 120 140 160 T J-Junction Temperature(°C) ID-Drain Current(A) VGS=4.5V Therm al Transient Im pedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Normalized Transient Thermal Resistance Single Pulse

SMC8205AW Rev.2.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TSSOP-8 PACKAGE DIMENSIONS