SMC8205AGS6

SMC8205AGS6 SEMTRON | Alldatasheet

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SMC8205AGS6 Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current (VGS=4.5V) TA=25°C 6 A TA=70°C 4.7 A IDM Pulsed Drain Current B 24 A PD Power Dissipation A TA=25°C 1.4 W TA=70°C 0.9 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 90 °C/W Thermal Resistance Junction to Ambient AC Steady-State 130 ■DESCRIPTION SMC8205AGS6 is the Dual N-Channel MOSFET , this advanced trench technology to provide excellent RDS(ON), facilitatedby it’s common-drain as a Unidirectional or bidirectional load switch applications. ■PART NUMBER INFORMATION Common-Drain Dual N-Channel MOSFET SMC 8205AG S6 - TR G a b c d e a : Company name. b : Product Serial number. c : Package code S6:SOT-23-6L d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS=20V, ID=6A RDS(ON)=22mΩ(Typ.)@VGS=4.5V RDS(ON)=25mΩ(Typ.)@VGS=2.5V ◆ Fast switch ◆ High power and current handling capability ◆ Exceptional on-resistance ■APPLICATIONS ◆ Power Management in Notebook Computer ◆ Portable Equipment and Battery Powered. D D Pin1 SOT-23-6L D D

SMC8205AGS6 Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 20 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 0.4 0.7 1.0 V IGSS Gate Leakage Current VDS=0V, VGS=±12V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V, TJ=25°C 1 μA VDS=16V, VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance D VGS=4.5V, ID=6A VGS=2.5V, ID=4A 22 30 mΩ Gfs Forward Transconductance VDS=5V, ID=5A 7 S Diode Characteristics VSD Diode Forward Voltage D IS=1A, VGS=0V 1 V IS Diode Continuous Forward Current 6 A trr Reverse Recovery Time IS =5A, dl/dt=100A/μs 8.5 ns Qrr Reverse Recovery Charge 2.7 nC Dynamic and Switching Parameters E Qg Total Gate Charge VDS=10V, VGS=4.5V, ID=5A 8.4 11.8 nC Qgs Gate-Source Charge 1 1.4 Qgd Gate-Drain Charge 2.8 3.9 Ciss Input Capacitance VDS=10V, VGS=0V, f=1MHz 492 pF Coss Output Capacitance 82 Crss Reverse Transfer Capacitance 70 Rg Gate Resistance VGS=0V, VDS=0V, F=1MHZ 1.6 Ω td(on) Turn-On Time VDD=10V, VGEN=4.5V RG=3.3Ω, ID=1A 4.7 9 nS tr 14 27 td(off) Turn-Off Time 23.6 45 tf 8.5 16 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC8205AGS6 Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=2V VGS=1.8V VGS=1.5V VGS=2.5V VGS=3, 4, 4.5, 5V 0 2 4 6 8 10 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=2.5V TA=25°C VGS=4.5V 0.5 1.5 2.5 3.5 4.5 0 1 2 3 4 5 6 7 8 9 VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=10V ID=5V 100 200 300 400 500 600 700 800 0 4 8 12 16 20 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C

SMC8205AGS6 Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Normalized On Resistance TJ-Junction Temperature(°C) RDS(ON) vs Junction Temperature 25 50 75 100 125 150 ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) 100µs 10µs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Duty=0.5 0.2 0.1 0.05 0.02 0.01 Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform DC 100ms TA=25°C 1ms 10ms Duty Cycle, D=t1/t2

SMC8205AGS6 Rev.A2 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-23-6L PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A - 1.300 - 0.051 A1 0.040 0.100 0.002 0.004 A2 1.000 1.200 0.039 0.047 A3 0.550 0.750 0.022 0.030 b 0.340 0.430 0.013 0.017 b1 0.330 0.380 0.013 0.015 c 0.150 0.210 0.006 0.008 c1 0.140 0.160 0.006 0.006 D 2.720 3.120 0.107 0.123 E 2.600 3.000 0.102 0.118 E1 1.400 1.800 0.055 0.071 e 0.950 BSC 0.066 BSC L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° 0.95mm 0.8mm 2.4mm 0.63mm Recommended Land Pattern