SMC6216J

SMC6216J SEMTRON | Alldatasheet

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SMC6216J Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TA=25°C 6.3 A TA=70°C 5 A IDM Pulsed Drain Current B 25.2 A IAS Avalanche Current B 8 A EAS Single Pulse Avalanche energy L=0.3mH B 9.6 mJ PD Power Dissipation A TA=25°C 4.2 W TA=70°C 2.7 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 30 °C/W Thermal Resistance Junction to Ambient AC Steady-State 70 RθJC Thermal Resistance Junction to Case 30 ■DESCRIPTION SMC6216J is the N-Channel enhancement mode power field effect transistors, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. These devices are well suited for high efficiency fast switching applications. ■PART NUMBER INFORMATION Single N-Channel MOSFET SMC 6216 J - TR G a b c d e a : Company name. b : Product Serial number. c : Package code J:SOT-223 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS=60V, ID=6.3A RDS(ON)=52mΩ(Typ.)@VGS=10V RDS(ON)=59mΩ(Typ.)@VGS=4.5V ◆100% EAS Guaranteed ◆Improved dv/dt capability ◆Fast switching ■APPLICATIONS ◆LED applications ◆Transformer Driving Switch ◆Motor drive ◆Power Management SOT-223 S G D S D G

SMC6216J Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS (TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.2 1.8 2.5 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V, TJ=25°C 1 μA VDS=48V, VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance D VGS=10V, ID=6.3A VGS=4.5V, ID=3.5A 52 70 mΩ Gfs Forward Transconductance VDS=10V, ID=3.5A 6.8 S Diode Characteristics VSD Diode Forward Voltage D IS=1A, VGS=0V 1 V IS Diode Continuous Forward Current 3.1 A trr Revese Recovery Time IS=1A, dl/dt=100A/μs TJ=25°C 22.8 ns Qrr Revese Recovery Charge 13.6 nC Dynamic and Switching Parameters E Qg Total Gate Charge VDS=30V, VGS=10V, ID=3.5A 9.2 13.8 nC Qg Total Gate Charge (4.5V) 4.5 6.8 Qgs Gate-Source Charge 2.3 3.5 Qgd Gate-Drain Charge 1.8 2.7 Ciss Input Capacitance VDS=30V, VGS=0V, f=1MHz 495 pF Coss Output Capacitance 43 Crss Reverse Transfer Capacitance 15 Rg Gate Resistance VGS=0V, VDS=0V, f=1MHZ 1.95 Ω td(on) Turn-On Time VDD=30V, VGEN=10V RG=3.3Ω, ID=1A 3.1 9 nS tr 9.2 18 td(off) Turn-Off Time 17.5 35 tf 5.5 10 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC6216J Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=4V 4.5V VGS=3.5V VGS=3V VGS=5, 6, 8 10V 0 2 4 6 8 10 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=10V VGS=4.5V TA=25°C 0 2 4 6 8 10 VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=30V ID=3.5A 100 200 300 400 500 600 700 800 0 10 20 30 40 50 60 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C

SMC6216J Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.4 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Drain-Source On Rsistance 25 50 75 100 125 150 ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) 1ms 100µs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25° C 100ms 10µs DC 10ms Duty Cycle, D=t1/t2

SMC6216J Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-223 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.520 1.800 0.060 0.071 A1 0.000 0.100 0.000 0.004 A2 1.500 1.700 0.059 0.067 A3 0.800 1.000 0.031 0.039 b 0.660 0.820 0.026 0.032 b1 0.680 0.740 0.027 0.029 c 0.300 0.350 0.012 0.014 c1 0.290 0.310 0.011 0.012 D 6.200 6.400 0.244 0.252 D1 2.900 3.100 0.114 0.122 E 6.830 7.070 0.269 0.278 E1 3.300 3.700 0.130 0.146 e 2.300 BSC. 0.091 BSC. L 0.900 1.150 0.035 0.045 L1 1.75 BSC. 0.069 BSC. Ɵ 0° 10° 0° 10°