SMC4802M

SMC4802M SEMTRON | Alldatasheet

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SMC4802M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TA=25°C 12 A TA=70°C 9.5 A IDM Pulsed Drain Current A 48 A IAS Avalanche Current A 30 A EAS Single Pulse Avalanche energy L=0.1mH AE 45 mJ PD Power Dissipation B TA=25°C 1.9 W TA=70°C 1.2 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t≦10s 65 °C/W Thermal Resistance Junction to Ambient BC Steady-State 90 RθJC Thermal Resistance Junction to Case 38 ■DESCRIPTION SMC4802 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance.This device is ideal for load switch applications. ■PART NUMBER INFORMATION Dual N-Channel MOSFET SMC 4802 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS = 30V, ID = 12A RDS(ON)=7mΩ(Typ.)@VGS=10V RDS(ON)=8mΩ(Typ.)@VGS=4.5V ◆100% EAS Guaranteed ◆Improved dv/dt capability ◆High power and current handling capability ■APPLICATIONS ◆Power Management ◆DC/DC Power System ◆Load Switch SOP-8

SMC4802M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 1.6 2.5 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, TJ=25°C 1 μA VDS=24V, VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance E VGS=10V, ID=12A VGS=4.5V, ID=10A 7 8.5 11 mΩ Gfs Forward Transconductance VDS=10V, ID=10A 8.8 S Diode Characteristics VSD Diode Forward Voltage E IS=1A, VGS=0V 1 V IS Continuous Source Current 12 A trr Revese Recovery Time IS=10A, dl/dt=100A/μs 12 ns Qrr Reverse Recovery Charge 3.5 nC Dynamic and Switching Parameters Qg Total Gate Charge VDS=15V, VGS=10V, ID=10A 24.6 33.4 nC Qg Total Gate Charge (4.5V) 12 15 Qgs Gate-Source Charge 2.8 3.5 Qgd Gate-Drain Charge 6 8.1 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz 1280 pF Coss Output Capacitance 196 Crss Reverse Transfer Capacitance 162 Rg Gate Resistance VGS=0V, VDS=0V, F=1MHZ 2.2 td(on) Turn-On Time VDD=15V, VGEN=10V RG=3.3Ω, ID=1A 6.4 12 nS tr 14 27 td(off) Turn-Off Time 32.4 62 tf 9.2 17 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. B. The value of RθJA is measured with the device mounted on 1in2 FR-4 board in a still air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). C. TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. D. The data tested by pulsed , pulse width ≦ 300µS , duty cycle ≦ 2%. E. The EAS data shows Max, tested and pulse width limited by TJ(MAX)=150°C (initial temperature TJ=25°C). The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC4802M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=6V VGS=3.5V VGS=3V VGS=10V VGS=4V VGS=4.5V 0 4 8 12 16 20 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=4.5V VGS=10V TA=25°C 0 5 10 15 20 25 VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=15V ID=10A 300 600 900 1200 1500 1800 0 5 10 15 20 25 30 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.4 0.6 0.8 1.2 1.4 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.4 0.8 1.2 1.6 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C

SMC4802M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 25 50 75 100 125 150 ID-Drain Current(A) TJ-Case Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) Single Pulse 100µs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Duty=0.5 0.2 0.1 0.05 0.02 0.01 Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25°C 1ms 10ms DC 100ms Duty Cycle, D=t1/t2

SMC4802M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOP-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.130 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270BSC. 0.050BSC. L 0.400 1.270 0.016 0.005 Ɵ 0° 8° 0° 8° 0.8mm 1.75mm 1.27mm 5.6mm Recommended Land Pattern