SMC4730PA SEMTRON | Alldatasheet

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SMC4730PA Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current * TC=25°C 100 A TC=100C 89 A IDM Pulsed Drain Current B 280 A ID Continuous Drain Current TA=25°C 27 A TA=70°C 21 A PD Power Dissipation A TA=25°C 2.5 W TA=70°C 1.6 W IAS Single Pulse Avalanche Current B 60 A EAS Single Pulse Avalanche energy L=0.1mH BE 180 mJ PD Power Dissipation C TC=25°C 69 W TC=100°C 28 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 20 °C/W Thermal Resistance Junction to Ambient AC Steady-State 55 RθJC Thermal Resistance Junction to Case 1.8 ■DESCRIPTION SMC4730PA is the N-Channel enhancement mode power field effect transistors, provide superior fast switching performance and withstand high energy pulse in the avalanche and commutation mode. ■PART NUMBER INFORMATION Single N-Channel MOSFET SMC 4730 PA - TR G a b c d e a : Company name. b : Product Serial number. c : Package code PA:DFN5X6A-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS=30V, ID=100A RDS(ON)=1.8mΩ(Typ.)@VGS= 10V RDS(ON)=2.3mΩ(Typ.)@VGS= 4.5V ◆Low Gate Charge ◆100% UIS and Rg tested ◆High power and current handling capability ■APPLICATIONS ◆POL Applications ◆DC/DC Converters S D D S G S D D Pin 1 DFN5X6A-8 S G D

SMC4730PA Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. The EAS data shows maximum, The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=60A. F. Guaranteed by design, not subject to production testing. * . The maximum rating current limited by package. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.7 2.5 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, TJ=25°C 1 μA VDS=24V, VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance D VGS=10V, ID=25A VGS=4.5V, ID=20A 1.8 2.3 2.2 3 mΩ Gfs Forward Transconductance VDS=5V, ID=20A 85 S Diode Characteristics VSD Diode Forward Voltage D Is=1A, VGS=0V 1 V IS Diode Continuous Forward Current 100 A Trr Reverse Recovery Time Is=20A, dl/dt=100A/μs 25 ns Qrr Reverse Recovery Charge 52 nC Dynamic and Switching Parameters F Qg Total Gate Charge VDS=15V, VGS=10V, ID=20A 47.1 63.6 nC Qg Total Gate Charge (4.5V) 22 30.8 Qgs Gate-Source Charge 11 15.4 Qgd Gate-Drain Charge 12 17 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz 4250 pF Coss Output Capacitance 680 Crss Reverse Transfer Capacitance 330 Rg Gate Resistance VGS=0V, VDS=0V, F=1MHZ 1.6 Ω td(on) Turn-On Time VDD=15V, VGs=10V, RG=3.3Ω ID=20A ns tr 9 td(off) Turn-Off Time 42 tf 13

SMC4730PA Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 120 150 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=3V VGS=2.5V 1.5 2.5 3.5 0 5 10 15 20 25 30 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=10V VGS=4.5V TA=25°C 0 10 20 30 40 50 VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=15V ID=20A 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0 25 50 75 100 125 150 Ptot-Power(W) TC-Case Temperature(°C) Power Dissipation TC=25°C

SMC4730PA Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 120 150 25 50 75 100 125 150 ID-Drain Current(A) TC-Case Temperature(°C) Drain Current vs TC Tc=25°C 0.1 100 1000 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) 1ms 0.001 0.01 0.1 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Duty=0.5 0.3 0.1 0.05 0.02 0.01 Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TC=25° C 10µs DC 10ms Duty Cycle, D=t1/t2 100µs

SMC4730PA Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■DFN5X6A PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.100 0.035 0.043 B 0.330 0.510 0.013 0.020 C 0.200 0.300 0.008 0.012 D 5.900 6.100 0.232 0.240 D1 3.380 3.780 0.133 0.149 D2 1.100 0.043 E 5.700 5.800 0.224 0.228 e 1.270BSC. 1.270BSC. F 4.800 5.000 0.189 0.197 G 0.361 0.396 0.014 0.016 H 0.410 0.610 0.016 0.024 I 0.060 0.200 0.002 0.008 L 0.510 0.710 0.020 0.028 Ɵ 0° 12° 0° 12° H B I I L Ɵ D E C e G F A