SMC4545M

SMC4545M SEMTRON | Alldatasheet

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SMC4545M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units N-ch P-ch VDSS Drain-Source Voltage 30 -30 V VGSS Gate-Source Voltage ±20 ±20 V ID Continuous Drain Current TA=25°C 7.8 -5.3 A TA=70°C 6.4 -4.2 A IDM Pulsed Drain Current A 31.2 -21.2 A IAS Avalanche Current A 15 -15 A EAS Single Pulse Avalanche energy L=0.3mH AE 33 33 mJ PD Power Dissipation B TA=25°C 2 2 W TA=70°C 1.3 1.3 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t≦10s 62 °C/W Thermal Resistance Junction to Ambient BC Steady-State 90 ■DESCRIPTION The SMC4545 is the N+P Complementary mode power field effect transistors are using trench DMOS technology. advanced trench technology to provide excellent RDS(ON). This device is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such. ■PART NUMBER INFORMATION Complementary MOSFET SMC 4545 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES N-Channel VDS=30V, ID=7.8A RDS(ON)=16mΩ(Typ.)@VGS=10V RDS(ON)=20mΩ(Typ.)@VGS=4.5V P-Channel VDS=-30V, ID=-5.3A RDS(ON)=38mΩ(Typ.)@VGS=-10V RDS(ON)=56mΩ(Typ.)@VGS=-4.5V ■APPLICATIONS ◆Hight Frequency Synchronous Buck DC-DC Converter ◆Portable Equipment and Battery Powered Systems. ◆Power Management SOP-8 N-ch P-ch

SMC4545M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■N-ch ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 1.5 2 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, TJ=25°C 1 μA VDS=24V, VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance D VGS=10V, ID=7.8A VGS=4.5V, ID=6A 16 26 mΩ Gfs Forward Transconductance VDS=10V, ID=6A 6 S Diode Characteristics VSD Diode Forward Voltage D IS=1A, VGS=0V 1 V IS Diode Continuous Forward Current 7.8 A trr Reverse Recovery Time IS=6A, dl/dt=100A/μs TJ=25°C 12.5 ns Qrr Reverse Recovery Charge 3.2 nC Dynamic and Switching Parameters E Qg Total Gate Charge VDS=15V,VGS=10V, ID=6A 12.7 17.8 nC Qg Total Gate Charge (4.5V) 6.2 8.7 Qgs Gate-Source Charge 2.4 3.4 Qgd Gate-Drain Charge 2 2.8 Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz 550 pF Coss Output Capacitance 78 Crss Reverse Transfer Capacitance 62 td(on) Turn-On Time VDD=15V, VGEN=10V RG=3.3Ω, ID=1A 2.5 5 nS tr 7.6 14 td(off) Turn-Off Time 19.8 38 tf 4.2 8 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC4545M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■P-ch ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 -1.5 -2 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V, TJ=25°C -1 μA VDS=-24V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance D VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4A 38 60 mΩ Gfs Forward Transconductance VDS=-10V, ID=-4.5A 12 S Diode Characteristics VSD Diode Forward Voltage D IS=-1A, VGS=0V -1 V IS Diode Continuous Forward Current -5.3 A trr Revese Recovery Time IS=-4.5A, dl/dt=100A/μs TJ=25°C 8.1 ns Qrr Revese Recovery Charg 2.7 nC Dynamic and Switching Parameters E Qg Total Gate Charge VDS=-15V, VGS=-10V ID=-4.5A 13.9 19.5 nC Qg Total Gate Charge (4.5V) 6.8 9.5 Qgs Gate-Source Charge 2.9 4.1 Qgd Gate-Drain Charge 3.5 4.9 Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz 750 pF Coss Output Capacitance 95 Crss Reverse Transfer Capacitance 82 td(on) Turn-On Time VDD=-15V, VGEN=-10V RG=6Ω, ID=-1A 4 8 nS tr 10 19 td(off) Turn-Off Time 28.5 42 tf 7.6 14 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC4545M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■N-ch TYPICAL CHARACTERISTICS 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=3V VGS=3.5V VGS=4V VGS=4.5, 5, 6, 10V 0 4 8 12 16 20 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=4.5V VGS=10V TA=25°C 0 2 4 6 8 10 12 VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=15V ID=6A 120 240 360 480 600 720 0 5 10 15 20 25 30 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.5 1.5 2.5 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C

SMC4545M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■N-ch TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 25 50 75 100 125 150 ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 1000 ID (A) Maximum Safe Operation Area VDS Voltage (V) 500µs 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25° C 1ms 10ms DC 100ms

SMC4545M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■P-ch TYPICAL CHARACTERISTICS 0 1 2 3 4 5 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-4V VGS=-2.5V VGS=-3V VGS=-3.5V VGS=-5,-6,-8,-10V -4.5V 0 3 6 9 12 15 RDS(ON)(mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V VGS=-10V TA=25°C 0 3 6 9 11 15 -VGS(V) Qg-Gate Charge(nC) Gate Charge 200 400 600 800 1000 1200 0 5 10 15 20 25 30 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.6 0.7 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.5 1.5 2.5 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C VDS=-15V ID=-4.5A

SMC4545M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■P-ch TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 25 50 75 100 125 150 -ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 1000 -ID (A) MAXIMUM SAFE OPERATION AREA - VDS Voltage (V) 1ms 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25° C 100ms 500µs DC 10ms Duty Cycle, D=t1/t2

SMC4545M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOP-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.130 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270BSC. 0.050BSC. L 0.400 1.270 0.016 0.005 Ɵ 0° 8° 0° 8° 0.8mm 1.75mm 1.27mm 5.6mm Recommended Land Pattern