SMC4420M

SMC4420M SEMTRON | Alldatasheet

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SMC4420M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TA=25°C 13 A TA=70°C 10.4 A IDM Pulsed Drain Current B 52 A IAS Avalanche Current B 20 A EAS Single Pulse Avalanche energy L=0.1mH B 20 mJ PD Power Dissipation A TA=25°C 3.1 W TA=70°C 2 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 40 °C/W Thermal Resistance Junction to Ambient AC Steady-State 75 RθJC Thermal Resistance Junction to Case 25 ■DESCRIPTION SMC4420M is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on -state resistance, provide superior, fast switching performance.These devices are well suited for high efficiency fast switching applications. ■PART NUMBER INFORMATION Single N-Channel MOSFET SMC 4420 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS=30V, ID=13A RDS(ON)=9mΩ(Typ.)@VGS=10V RDS(ON)=11mΩ(Typ.)@VGS=4.5V ◆100% EAS Guaranteed ◆Low Gate Charge ◆Fast Switching ◆Improved dv/dt Capability ■APPLICATIONS ◆Power Management ◆DC/DC Power System ◆Load Switch SOP-8 S D D S G S D D S G D

SMC4420M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS (TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.6 2.5 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, TJ=25°C 1 μA VDS=24V, VGS=0V, TJ=75°C 10 RDS(ON) Drain-source On-Resistance D VGS=10V, ID=13A VGS=4.5V, ID=10A 9 14 mΩ Gfs Forward Transconductance VDS=5V, ID=10A 14 S Diode Characteristics VSD Diode Forward Voltage D IS=1A, VGS=0V 1 V IS Diode Continuous Forward Current 13 A trr Revese Recovery Time IS=10A, dl/dt=100A/μs 9 ns Qrr Revese Recovery Charge 3.2 nC Dynamic and Switching Parameters E Qg Total Gate Charge VDS=15V, VGS=10V, ID=10A 16.9 nC Qg Total Gate Charge (4.5V) 7.9 Qgs Gate-Source Charge 3.7 Qgd Gate-Drain Charge 3.2 Ciss Input Capacitance VDS=15V,VGS=0V, f=1MHz 955 pF Coss Output Capacitance 138 Crss Reverse Transfer Capacitance 110 Rg Gate Resistance VGS=0V, VDS=0V, F=1MHZ 2.5 Ω td(on) Turn-On Time VDD=15V, VGEN=10V, RG=3.3Ω, ID=1A 5 8.7 nS tr 9.6 18 td(off) Turn-Off Time 28 53 tf 8 15 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC4420M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=3.5V VGS=3V VGS=4V 4.5, 5, 6, 10V 0 5 10 15 20 25 30 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=10V VGS=4.5V TA=25°C 0 3 6 9 12 15 17 VGS(V) Qg-Gate Charge(nC) Gate Charge 300 600 900 1200 1500 0 5 10 15 20 25 30 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.5 1.5 2.5 3.5 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C VDS=15V ID=10A

SMC4420M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 Normalized On-Resistance TJ-Junction Temperature(°C) Drain-Source On Resistance 25 50 75 100 125 150 ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 ID (A) Maximum Safe Operation Area VDS Voltage (V) 100µs 0.001 0.01 0.1 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25° C 1ms 10ms DC 100ms Duty Cycle, D=t1/t2

SMC4420M Rev.A3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOP-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.300 1.500 0.051 0.059 b 0.390 0.490 0.015 0.019 c 0.200 0.250 0.008 0.010 D 4.800 5.100 0.189 0.201 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 BSC 0.050 BSC L 0.500 0.800 0.020 0.031 Ɵ 0° 8° 0° 8° 0.8mm 1.75mm 1.27mm 5.6mm Recommended Land Pattern