SMC4407M

SMC4407M SEMTRON | Alldatasheet

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SMC4407M Rev.A1.3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±25 V ID Continuous Drain Current TA=25°C -12 A TA=70°C -9.6 A IDM Pulsed Drain Current B -48 A IAS Single Pulse Avalanche Current B -30 A EAS Single Pulse Avalanche energy L=0.1mH B 45 mJ PD Power Dissipation A TA=25°C 3.1 W TA=70°C 2 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 35 °C/W Thermal Resistance Junction to Ambient AC Steady-State 70 ■DESCRIPTION SMC4407M is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior , fast switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is suitable for use as a load switch or PWM applications. ■PART NUMBER INFORMATION Single P-Channel MOSFET SMC 4407 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS=-30V, ID=-12A RDS(ON)=11mΩ(Typ.)@VGS=-10V RDS(ON)=15mΩ(Typ.)@VGS=-4.5V ◆Fast switch ◆High power and current handling capability ■APPLICATIONS ◆Load Switch ◆LED Application ◆DC-DC Power Management S D D S G S D D SOP-8 S G D

SMC4407M Rev.A1.3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -30 - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 -1.6 -2.5 V IGSS Gate Leakage Current VDS=0V, VGS=±25V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V, TJ=25°C -1 μA VDS=-24V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance D VGS=-10V, ID=-12A VGS=-4.5V, ID=-8A 11 19 mΩ Gfs Forward Transconductance VDS=-10V, ID=-10A 12.5 S Diode Characteristics VSD Diode Forward Voltage D IS=-1A,VGS=0V -1 V IS Diode Continuous Forward Current -12 A trr Reverse Recovery Time IS=-10A, dl/dt=100A/μs 13.8 ns Qrr Reverse Recovery Charge 12.3 nC Dynamic and Switching Parameters E Qg Total Gate Charge VDS=-15V, VGS=-10V ID=-10A 36 48.6 nC Qg Total Gate Charge (4.5V) 18 24.3 Qgs Gate-Source Charge 8.1 10.9 Qgd Gate-Drain Charge 6.8 9.2 Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz 2150 pF Coss Output Capacitance 298 Crss Reverse Transfer Capacitance 135 Rg Gate Resistance VGS=0V, VDS=0V, F=1MHZ 8.8 Ω td(on) Turn-On Time VDD=-15V, VGEN=-10V RG=3.3Ω, ID=-1A 7.7 15 nS tr 57.8 129 td(off) Turn-Off Time 57.5 109 tf 21.3 40 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC4407M Rev.A1.3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-4V VGS=-3V VGS=-4.5V 0 4 8 12 16 20 RDS(ON)(mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V VGS=-10V TA=25°C 0 8 16 24 32 40 -VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=-15V ID=-10A 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.5 1.5 2.5 3.5 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C

SMC4407M Rev.A1.3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized On Resistance TJ-Junction Temperature(°C) RDS(ON) vs Junction Temperature 25 50 75 100 125 150 -ID-Drain Current(A) TJ-Junctiom Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 -ID (A) Maximum Safe Operation Area -VDS Voltage (V) 100ms 100µs 0.001 0.01 0.1 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Duty=0.5 0.3 0.1 0.05 0.02 0.01 Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform Duty Cycle, D=t1/t2 DC TA=25° C 1ms 10ms

SMC4407M Rev.A1.3 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOP-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.300 1.500 0.051 0.059 b 0.390 0.490 0.015 0.019 c 0.200 0.250 0.008 0.010 D 4.800 5.100 0.189 0.201 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270 BSC 0.050 BSC L 0.500 0.800 0.020 0.031 Ɵ 0° 8° 0° 8° 0.8mm 1.75mm 1.27mm 5.6mm Recommended Land Pattern