SMC4237M

SMC4237M SEMTRON | Alldatasheet

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SMC4237M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current (VGS=-4.5V) TA=25°C -11.5 A TA=70°C -9.2 A IDM Pulsed Drain Current A -46 A IAS Avalanche Current A -25 A EAS Single Pulse Avalanche energy L=0.1mH AD 31 mJ PD Power Dissipation B TA=25°C 3.6 W TA=70°C 2.3 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t≦10s 35 °C/W Thermal Resistance Junction to Ambient BC Steady-State 70 ■DESCRIPTION SMC4237M is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on -state resistance, provide superior , fast switching performance.These devices are well suited for high efficiency fast switching applications. ■PART NUMBER INFORMATION Single P-Channel MOSFET SMC 4237 M - TR G a b c d e a : Company name. b : Product Serial number. c : Package code M:SOP-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS = -20V, ID = -11.5A RDS(ON)=12mΩ(Typ.)@VGS=-10V RDS(ON)=14mΩ(Typ.)@VGS=-4.5V RDS(ON)=18mΩ(Typ.)@VGS=-2.5V RDS(ON)=23mΩ(Typ.)@VGS=-1.8V ◆Fast switch ◆Low gate charge ◆High power and current handling capability ■APPLICATIONS ◆LED Application ◆Portable Equipment ◆DC-DC Power Management SOP-8 S D D S G S D D S D G

SMC4237M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -20 - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -0.4 -0.6 -1 V IGSS Gate Leakage Current VDS=0V, VGS=±12V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-20V,VGS=0V, TJ=25°C -1 μA VDS=-16V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance VGS=-10V, ID=-11.5A VGS=-4.5V, ID=-8A VGS=-2.5V, ID=-5A VGS=-1.8V, ID=-3A mΩ Gfs Forward Transconductance VDS=-10V, ID=-10A 33 S Diode Characteristics VSD Diode Forward Voltage IS=-1A, VGS=0V -1 V IS Diode Continuous Current -5.2 A trr Reverse Recovery Time IS=-10A, dl/dt=100A/μs 16.8 ns Qrr Reverse Recovery Charge 8 nC Dynamic and Switching Parameters Qg Total Gate Charge VDS=-10V, VGS=-4.5V, ID=-5A 39 54 nC Qg Total Gate Charge (4.5V) 19 26.6 Qgs Gate-Source Charge 2.1 2.9 Qgd Gate-Drain Charge 3.8 5.3 Ciss Input Capacitance VDS=-10V, VGS=0V, f=1MHz 1680 pF Coss Output Capacitance 228 Crss Reverse Transfer Capacitance 115 td(on) Turn-On Time VDD=-10V, VGEN=-4.5V RG=10Ω, ID=-1A 10 19 nS tr 38 72 td(off) Turn-Off Time 86 163 tf 25 48 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. B. The value of RθJA is measured with the device mounted on 1in2 FR-4 board in a still air environment with maximum junction temperature TJ(MAX)=150°C (initial temperature TA=25°C). C. TJ(MAX)=150°C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. D. The EAS data shows Max, tested and pulse width limited by TJ(MAX)=150°C (initial temperature TJ=25°C). The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC4237M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0 1 2 3 4 5 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-2.5V VGS=-1.2V VGS=-1.5V VGS=-2V 0 4 8 12 16 20 RDS(ON)(mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5VVGS=-10V VGS=-2.5V VGS=-1.8V 0.5 1.5 2.5 3.5 4.5 0 3 6 9 12 15 18 -VGS(V) Qg-Gate Charge(nC) Gate Charge 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.8 1.6 2.4 3.2 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C TA=25°C VDS=-10V ID=-5A

SMC4237M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 25 50 75 100 125 150 ID-Drain Current(A) TJ-Junction Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 100 0.01 0.1 1 10 100 -ID (A) Maximum Safe Operation Area - VDS Voltage (V) 1ms 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Duty=0.5 0.2 0.1 0.05 0.02 0.01 Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TA=25°C 100ms 100µs DC 10ms Duty Cycle, D=t1/t2

SMC4237M Rev.A1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOP-8 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.130 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270BSC. 0.050BSC. L 0.400 1.270 0.016 0.005 Ɵ 0° 8° 0° 8° 0.8mm 1.75mm 1.27mm 5.6mm Recommended Land Pattern