SMC4207PA

SMC4207PA SEMTRON | Alldatasheet

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SMC4207PA Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current TC=25°C -55 A TC=100C -35 A IDM Pulsed Drain Current B -220 A ID Continuous Drain Current TA=25°C -15.4 A TA=70°C -12.3 A PD Power Dissipation A TA=25°C 5 W TA=70°C 3.2 W IAS Single Pulse Avalanche Current B -30 A EAS Single Pulse Avalanche energy L=0.1mH B 45 mJ PD Power Dissipation C TC=25°C 62.5 W TC=100°C 25 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 25 °C/W Thermal Resistance Junction to Ambient AC Steady-State 60 RθJC Thermal Resistance Junction to Case 2 ■DESCRIPTION SMC4207PA is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance.These devices are well suited for high efficiency fast switching applications. ■PART NUMBER INFORMATION Single P-Channel MOSFET SMC 4207 PA - TR G a b c d e a : Company name. b : Product Serial number. c : Package code PA:DFN5X6A-8 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS=-40V, ID=-55A RDS(ON)=9.5mΩ(Typ.)@VGS=-10V RDS(ON)=13mΩ(Typ.)@VGS=-4.5V ◆Low Gate Charge ◆High switching speed ■APPLICATIONS ◆Power Applications ◆LED Lighting S D D S G S D D Pin 1 DFN5X6A-8 S G D

SMC4207PA Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA -40 - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA -1 -1.6 -2.5 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=-40V, VGS=0V, TJ=25°C -1 μA VDS=-32V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance D VGS=-10V, ID=-15.4A VGS=-4.5V, ID=-12A 9.5 17 mΩ Gfs Forward Transconductance VDS=-10V, ID=-10A 38 S Diode Characteristics VSD Diode Forward Voltage D IS=-1A, VGS=0V -1 V IS Diode Continuous Forward Current -55 A Dynamic and Switching Parameters E Qg Total Gate Charge VDS=-20V, VGS=-10V ID=-10A 47.1 63.5 nC Qg Total Gate Charge (4.5V) 22 Qgs Gate-Source Charge 8 Qgd Gate-Drain Charge 9 Ciss Input Capacitance VDS=-20V, VGS=0V, f=1MHz 2750 pF Coss Output Capacitance 255 Crss Reverse Transfer Capacitance 145 td(on) Turn-On Time VDD=-20V, VGEN=-10V RG=6Ω ID=-1A 24 46 nS tr 12 23 td(off) Turn-Off Time 47 89 tf 28 53 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C. C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. Guaranteed by design, not subject to production testing. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC4207PA Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 100 120 0 1 2 3 4 5 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-4.0V VGS=-3.5V VGS=-4.5V VGS=-5V VGS=-6, -8, -9-10V 0 5 10 15 20 25 30 RDS(ON)(mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V VGS=-10V TA=25°C 0 5 10 15 20 25 30 35 40 45 -VGS(V) Qg-Gate Charge(nC) Gate Charge VDS=-20V ID=-10A 800 1600 2400 3200 4000 0 5 10 15 20 25 30 35 40 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.4 0.6 0.8 1.2 1.4 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0 25 50 75 100 125 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TC=25°C

SMC4207PA Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.3 0.6 0.9 1.2 1.5 1.8 -50 -25 0 25 50 75 100 125 150 Normalized On Resistance TJ-Junction Temperature(°C) RDS(ON) vs Junction Temperature 25 50 75 100 125 150 -ID-Drain Current(A) TC-Case Temperature(°C) Drain Current vs TC TC=25°C 0.1 100 0.01 0.1 1 10 100 1000 -ID (A) Maximum Safe Operation Area -VDS Voltage (V) 0.01 0.1 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse RθJA: 60°C/W Duty=0.5 0.2 0.1 0.05 0.02 0.01 Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Switching Time Waveform Ton Toff Td(off) Tf 10ms Tc=25° C 100us 1ms DC Duty Cycle, D=t1/t2 500 100ms 10us

SMC4207PA Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com Recommended Land Pattern ■DFN5X6A PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.100 0.035 0.043 B 0.330 0.510 0.013 0.020 C 0.200 0.300 0.008 0.012 D 5.900 6.100 0.232 0.240 D1 3.380 3.780 0.133 0.149 D2 1.100 0.043 E 5.700 5.800 0.224 0.228 e 1.270BSC. 1.270BSC. F 4.800 5.000 0.189 0.197 G 0.361 0.396 0.014 0.016 H 0.410 0.610 0.016 0.024 I 0.060 0.200 0.002 0.008 L 0.510 0.710 0.020 0.028 Ɵ 0° 12° 0° 12° H B I I L Ɵ D E C e G F A