SMC3206H

SMC3206H SEMTRON | Alldatasheet

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SMC3206H Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ABSOLUTE MAXIMUM RATINGS (TA=25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current * TC=25°C 100 A TC=100°C 72.5 A IDM Pulsed Drain Current B 280 A ID Continuous Drain Current TA=25°C 22 A TA=70°C 17.5 A PD Power Dissipation A TA=25°C 2.5 W TA=70°C 1.6 W IAS Single Pulse Avalanche Current B 45 A EAS Single Pulse Avalanche energy L=0.1mH BE 101 mJ PD Power Dissipation C TC=25°C 69 W TC=100°C 28 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient A t≦10s 20 °C/W Thermal Resistance Junction to Ambient AC Steady-State 50 RθJC Thermal Resistance Junction to Case 1.8 ■DESCRIPTION SMC3206H is the N-Channel enhancement mode power field effect transistors, provide superior fast switching performance and withstand high energy pulse in the avalanche and commutation mode. ■PART NUMBER INFORMATION Single N-Channel MOSFET SMC 3206 H - TR G a b c d e a : Company name. b : Product Serial number. c : Package code H:TO-252 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant ■FEATURES VDS=30V, ID=100A RDS(ON)=2.7mΩ(Typ.)@VGS=10V RDS(ON)=3.4mΩ(Typ.)@VGS=4.5V ◆High power and current handling capability ◆100% EAS Guaranteed ■APPLICATIONS ◆DC/DC Converter ◆Power Management G S D TO-252 S G D

SMC3206H Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TA=25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 - V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.2 1.6 2.5 V IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V, TJ=25°C -1 μA VDS=24V, VGS=0V, TJ=75°C -10 RDS(ON) Drain-source On-Resistance D VGS=10V, ID=20A VGS=4.5V, ID=15A 2.7 3.4 3.2 4.2 mΩ Gfs Forward Transconductance VDS=5V, ID=20A 72 S Diode Characteristics VSD Diode Forward Voltage D IS=1A, VGS=0V 1 V IS Diode Continuous Forward Current 80 A trr Reverse Recovery Time IS=20A, dl/dt=100A/μs 34 ns Qrr Reverse Recovery Charge 25 nC Dynamic and Switching Parameters F Qg Total Gate Charge VDS=15V, VGS=10V, ID=20A 37.5 52.5 nC Qg Total Gate Charge (4.5V) 17.5 24.5 Qgs Gate-Source Charge 5.4 7.6 Qgd Gate-Drain Charge 6.7 9.4 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz 2250 pF Coss Output Capacitance 315 Crss Reverse Transfer Capacitance 168 Rg Gate Resistance VGS=0V, VDS=0V, f=1MHz 2 Ω td(on) Turn-On Time VDD=15V, VGS=10V, RG=3Ω ID=1A nS tr 5 td(off) Turn-Off Time tf 9 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Surface mounted on FR4 board using 1 in2 pad size. B. Pulsed width limited by maximum junction temperature, TJ(MAX)=150°C (initial temperature TJ=25°C). C. Using ≤ 10s junction-to-ambient thermal resistance is base on TJ(MAX)=150°C. D. Pulse test width ≤300μs and duty cycle ≤ 2%. E. The EAS data shows maximum, The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=45A F. Guaranteed by design, not subject to production testing. * . The maximum rating current limited by package. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC3206H Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 100 120 140 160 0 1 2 3 4 5 ID-Drain Current(A) VDS-Drain Source Voltage(V) Output Characteristics VGS=2.5V VGS=3V VGS=3.5V VGS=4.5,6,8,10V 0 5 10 15 20 25 30 RDS(ON)(mΩ) ID-Drain Current(A) Drain-Source On Resistance VGS=4.5V VGS=10V TA=25°C 0 5 10 15 20 25 30 35 40 VGS(V) Qg-Gate Charge(nC) Gate Charge 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 25 30 Capacitance(pF) VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0 25 50 75 100 125 150 Ptot-Power(W) TC-Case Temperature(°C) Power Dissipation TC=25°C VDS=15V ID=20A

SMC3206H Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS 0.6 0.8 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Normalized On-Resistance TJ-Junction Temperature(°C) Drain-Source On Resistance 100 120 25 50 75 100 125 150 ID-Drain Current(A) TC-Case Temperature(°C) Drain Current vs TC TC=25°C 0.1 100 0.01 0.1 1 10 100 1000 ID (A) Maximum Safe Operation Area VDS Voltage (V) 1ms 300µs 0.0001 0.001 0.01 0.1 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Single Pulse Duty=0.5 0.3 0.1 0.05 0.02 0.01 Qgd Qg VGS Qgs V Charge Gate Chrge Waveform VDS VGS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform TC=25° C 100µs DC 10ms Duty Cycle, D=t1/t2

SMC3206H Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-micro.com Recommended Land Pattern ■TO-252 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.380 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.640 0.880 0.025 0.035 b2 0.770 1.140 0.030 0.045 b3 5.210 5.460 0.205 0.215 c 0.460 0.600 0.018 0.024 c2 0.460 0.580 0.018 0.023 D 6.000 6.223 0.236 0.245 D1 5.210 - 0.205 - E 6.400 6.731 0.252 0.265 E1 4.400 - 0.173 - e 2.286 BSC. 0.090 BSC. H 9.400 10.40 0.370 0.409 L 1.400 1.770 0.055 0.070 L1 2.743 REF. 0.108 REF. L2 0.508 BSC. 0.020 BSC. L3 0.890 1.270 0.035 0.050 L4 0.640 1.010 0.025 0.040 Ɵ 0° 10° 0° 10°