SMC3056

SMC3056 SEMTRON | Alldatasheet

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SMC3056 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■FEATURE ◆ 20V/6.0A, RDS(ON) =22mΩ(typ.)@VGS =4.5V ◆ 20V/4.0A, RDS(ON) =27mΩ(typ.)@VGS =2.5V ◆ 20V/2.8A, RDS(ON) =35mΩ(typ.)@VGS =1.8V ◆ Super high density cell design for extremely low RDS(ON) ◆ Exceptional on-resistance and Maximum DC current capability ■APPLICATIONS ◆ Power Management in Note book ◆ Portable Equipment ◆ DSC ◆ LCD Display inverter ◆ Battery Powered System N-Channel Enhancement Mode MOSFET SOT-89 Top View S D G S G D ■DESCRIPTION The SMC3056 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent R DS(ON).low gate charge and operation gate as 1.8V. This device is suitable for use as a load switch or other general applications. SMC3056K-TRG ROHS Compliant This is Halogen Free ■PIN CONFIGURATION ■PART NUMBER INFORMATION SMC 3056 K – TR G a b c d e a : Company name. b : Product Serial number. c : Package code d : Handling code e : Green produce code 20V N-Channel Enhancement Mode MOSFET

SMC3056 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ORDERING INFORMATION Part Number Package Code Handling Code Shipping SMC3056K-TRG K : SOT-89 TR : Tape&Reel 1K/Reel ※ Year Code : 0 ~ 9, 2010 : 0 ※ Week Code : A(1~2) ~ Z(53~54) ※ SOT-89 : Only available in tape and reel packaging. ■ABSOLUTE MAXIMUM RATINGS (TA = 25℃ Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±12 V ID Continuous Drain Current (TC=25°C) A VGS=4.5V 6.0 A Continuous Drain Current (TC=70°C) A 5.0 A IDM Pulsed Drain CurrentB 14 A PD Power Dissipation TA=25°C TA=70°C 2.5 1.2 W TJ Operation Junction Temperature -55 to150 °C TSTG Storage Temperature Range -55 to150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ■THERMAL DATA Symbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to AmbientA Steady-State - 120 °C/W RθJL Thermal Resistance Junction to LeadA Steady-State - 80 °C/W

SMC3056 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■ELECTRICAL CHARACTERISTICS(TJ = 25℃ Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 20 V VGS(th) Gate Threshold Voltage VDS=VGS,ID=250μA 0.5 3 1.0 V IGSS Gate Leakage Current VDS=0V,VGS=±12V ±100 nA IDSS Zero Gate Voltage, Drain-Source Leakage Current VDS=20V,VGS=0V TJ=25°C 1 μA VDS=20V,VGS=0V TJ=55°C 5 RDS(ON) Drain-source On-ResistanceB VGS=4.5V,ID=6.0A VGS=2.5V,ID=4.0A VGS=1.8V,ID=2.8A mΩ Gfs Forward Transconductance VDS=15V,ID=5.0A 30 S Source-Drain Doide VSD Diode Forward Voltage IS=1.7A,VGS=0V 0.6 1.2 V IS Continuous Source CurrentAD 6 A Dynamic Parameters Qg (4.5V) Total Gate Charge VDS=10V VGS=4.5V ID=5.8A 7.7 nC Qgs Gate-Source Charge 1.1 Qgd Gate-Drain Charge 2.35 Ciss Input Capacitance VDS=10V VGS=0V f=1MHz 650 pF Coss Output Capacitance 92 Crss Reverse Transfer Capacitance 75 td(on) Turn-On Time VDD=10V ID=1.0A VGEN=4.5V RG=6Ω 19.1 nS tr 135 td(off) Turn-Off Time tf 116 Note: A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. B. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% D. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC3056 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Output Characteristics 0 0.5 1 1.5 2 2.5 3 VDS-Drain Source Voltage(V) ID-Drain Current(A) VGS=1.8V VGS=2.5V VGS=4.5V VGS=6V 8V10V Drain-Source On Resistance 0 1 2 3 4 5 6 7 8 9 10 VGS-Gate Source Voltage(V) RDS(mΩ) 125℃ 25℃ Drain Source On Resistance 100 0 2 4 6 8 10 12 14 16 ID-Drain Current(A) RDS(ON)(mΩ) VGS=1.8V VGS=2.5V VGS=4.5V Gate Threshold Voltage 0.2 0.4 0.6 0.8 1.2 -50 -25 0 25 50 75 100 125 150 Tj-Junction Temperature(°C) Normalized Threshold Voltage IDS=250μA Gate Charge 0 2 4 6 8 10 12 14 QG-Gate Charge(nC) VGS(V) VDS=10V ID-5.8A Drain Source On Resistance 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -50 -25 0 25 50 75 100 125 150 TJ-Junction Temperature(°C) Normalized On Resistance

SMC3056 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■TYPICAL CHARACTERISTICS (25℃ Unless Note) Capacitance 200 400 600 800 1000 1200 0 4 8 12 16 20 VDS-Drain Source Voltage(V) C(pF) Ciss CossCrss Source Drain Diode Forward 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 VSD-Source Drain Voltage(V) IS-Source Current(A) Power Dissipation 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) Ptot-Power(W) Drain Current 0 20 40 60 80 100 120 140 160 TJ-Junction Temperature(°C) ID-Drain Current(A) Thermal Transient Impedance 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration(Sec) Normalized Transient Thermal Resistance Single Pulse TA=150°C TA=25°C TA=25°C

SMC3056 Rev.1.1 Copyright © Semtron Microtech Corp. www.semtron-micro.com ■SOT-89 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.130 0.197 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550 BSC 0.061 BSC E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.550 BSC 0.060 BSC e1 3.000 BSC 0.118 BSC L 0.900 1.200 0.035 0.047