SMC2207ESC

SMC2207ESC SEMTRON | Alldatasheet

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SMC2207ESC Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-mcro.com ■ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Continuous Drain Current TA=25°C -0.6 A TA=70°C -0.48 A IDM Pulsed Drain Current A -1.6 A PD Power Dissipation B TA=25°C 0.3 W TA=70°C 0.2 W TJ Operation Junction Temperature -55/150 °C TSTG Storage Temperature Range -55/150 °C ■THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient C t≦10s - °C/W Thermal Resistance Junction to Ambient C Steady-State 420 RθJC Thermal Resistance Junction to Case C - ■DESCRIPTION SMC2207E is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss needed in small outline surface mount package. ■PART NUMBER INFORMATION Single P-Channel MOSFET SMC 2207 E SC - TR G a b c d e f a : Company name. b : Product Serial number. c : ESD d : Package code SC: SOT-523 e : Handling code TR: Tape&Reel f : Green produce code G: RoHS Compliant ■FEATURES VDS = -20V, ID = -0.6A RDS(ON) =450mΩ(Typ.)@VGS = -4.5V RDS(ON) =630mΩ(Typ.)@VGS = -2.5V RDS(ON) =850mΩ(Typ.)@VGS = -1.8V RDS(ON) =1060mΩ(Typ.)@VGS = -1.5V RDS(ON) =1700mΩ(Typ.)@VGS = -1.2V ◆Fast switch ◆1.2V Low gate drive applications ◆Improved dv/dt capability ■APPLICATIONS ◆Hend-Held Instruments ◆Load Switch ◆Battery Protection S G D SOT-523 G D S

SMC2207ESC Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-mcro.com ■ELECTRICAL CHARACTERISTICS(TA = 25°C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage D VGS =0V,ID =-250μA -20 V VGS(th) Gate Threshold Voltage D VDS =VGS,ID =-250μA -0.3 -0.6 -1 V IGSS Gate Leakage Current VDS =0V,VGS=±8V ±20 nA IDSS Zero Gate Voltage Drain Current VDS =-20V,VGS =0V TJ =25°C -1 μA VDS =-16V,VGS =0V TJ =75°C -10 RDS(ON) Drain-source On-Resistance D VGS =-4.5V,ID=-0.4A VGS =-2.5V,ID=-0.3A VGS =-1.8V,ID=-0.15A VGS =-1.5V,ID=-0.1A VGS =-1.2V,ID=-0.1A 450 630 850 1060 1700 580 840 1150 1600 2700 mΩ Source-Drain Diode VSD Diode Forward VoltageB IS=-1A,VGS=0V -1.0 V IS Continuous Source Current -0.4 A Dynamic and Switching Parameters Qg Total Gate Charge VDS =-10V,VGS =-4.5V ID =-0.6A nC Qgs Gate-Source Charge 0.14 Qgd Gate-Drain Charge 0.18 Ciss Input Capacitance VDS =-10V,VGS =0V f =1MHz pF Coss Output Capacitance 18 Crss Reverse Transfer Capacitance 15 td(on) Turn-On Time E VDD=-10V, VGEN=-4.5V, RG=10Ω, ID=-0.2A 6.2 nS tr 5.6 td(off) Turn-Off Time E 30 tf 18 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. The value of RθJA is measured with the device in a still air environment with maximum junction temperature TJ(MAX)= 150°C (initial temperature TA=25°C).. B. The TJ(MAX)=150°C, using junction-to-ambient thermal resistance. C. Surface−mounted on FR-4 board using 1 sq−in pad, 2 oz Cu, in a still air environment with TA=25°C. D. The data tested by pulsed , pulse width ≦ 300uS , duty cycle ≦ 2% E. Pulsed width limited by maximum junction temperature. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

SMC2207ESC Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-mcro.com ■TYPICAL CHARACTERISTICS 0.3 0.6 0.9 1.2 1.5 0 1 2 3 4 5 -ID-Drain Current(A) -VDS-Drain Source Voltage(V) Output Characteristics VGS=-1.8V VGS=-1.5V VGS=-1.2V 500 1000 1500 2000 2500 3000 RDS(ON)(mΩ) -ID-Drain Current(A) Drain-Source On Resistance VGS=-4.5V VGS=-1.8V VGS=-2.5V VGS=-1.5V TA=25°C 0 0.2 0.4 0.6 0.8 1 -VGS(V) Qg-Gate Charge(nC) Gate Charge VGS =-4.5V ID =-0.4A 100 0 5 10 15 20 Capacitance(pF) -VDS-Drain Source Voltage(V) Capacitance Ciss Coss Crss 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 Normalized Threshold Voltage TJ-Junction Temperature(°C) Gate Threshold Voltage 0.1 0.2 0.3 0.4 0.5 0 30 60 90 120 150 Ptot-Power(W) TJ-Junction Temperature(°C) Power Dissipation TA=25°C TA=25°C

SMC2207ESC Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-mcro.com ■TYPICAL CHARACTERISTICS 0.7 0.9 1.1 1.3 1.5 1.7 25 50 75 100 125 150 Normalized On Resistance TJ-Junction Temperature(°C) RDS(ON) vs Junction Temperature VGS=-2.5V VGS=-4.5V 0.3 0.6 0.9 1.2 1.5 25 50 75 100 125 150 -ID-Drain Current(A) TJ-Case Temperature(°C) Drain Current vs TJ TA=25°C 0.01 0.1 0.01 0.1 1 10 100 -ID (A) Maximum Safe Operation Area -VDS Voltage (V) Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Transient Thermal Resistance Square Wave Pulse Duration(Sec) Thermal Transient Impedance Duty=0.5 0.2 0.1 0.05 0.02 0.01 Qgd Qg -VGS Qgs V Charge Gate Chrge Waveform VGS VDS 10% 90% Td(on) Tr Td(off) Tf Ton Toff Switching Time Waveform Duty Cycle, D=t1/t2 10us 100us 1ms 10ms DC 0.1 100m s

SMC2207ESC Rev.A1 Copyright © Semtron Microtech Corp. www.semtron-mcro.com ■SOT-523 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.750 0.059 0.069 E 0.700 0.900 0.028 0.035 E1 1.400 1.750 0.055 0.069 e1 0.900 1.100 0.035 0.043 L 0.300 0.460 0.012 0.018 L1 0.260 0.460 0.010 0.018 Ɵ 0° 8° 0° 8° 1.0mm 0.5mm 0.4mm 1.3mm Recommended Land Pattern 1.8mm