SLS120J060A SANAN | Alldatasheet
Document overview
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Technical content
Datasheet sections
Features
➢ Zero Reverse Recovery Current ➢ Ceramic Package Provides 2.5kV Isolation ➢ Positive temperature coefficient ➢ Temperature-independent performance ➢ High-speed switching ➢ Low switching loss ➢ Low heat dissipation requirements ➢ RoHS compliant Potential Applications ➢ Solar inverter ➢ Uninterruptible Power Supply (UPS) Package Type: SOT-227 ➢ Switched-mode power supplies ➢ Welding equipment ➢ High speed rectifier
Description
The SLS120J060A SiC Schottky Barrier Diode (SBD) Module has been developed using Sanan’s advanced 3rd generation SiC SBD technology with the highest performance and reliability. It registers higher efficiency, higher operation temperature and lower loss and can be operated at higher frequency than Si-based solutions. As to the Schottky structure, it shows no recovery at turn-off and allows a low leakage current with reverse voltage up to 1200V. It can contribute to system miniaturization and achieve lightweight system design. Using RoHS compliant components, it is qualified for use in industrial application. Product Specifications Device VRRM IF (110℃) VF (25℃) QC Marking SLS120J060A 1200V 69A 1.40V 323nC SLS120J060A
Table 1. Maximum Ratings
69 TC = 110℃
60 TC = 126℃
Table 2. Thermal Resistance
Table 3. Static Electrical Characteristics Table 4. Dynamic Electrical Characteristics
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Package Information
Dimension unit: [mm] Symbol Min Nom Max A 31.50 31.80 32.10 B 7.70 8.00 8.30 C 4.10 4.20 4.30 D 4.10 4.20 4.30 E 4.10 4.24 4.30 F 14.90 15.00 15.15 G 29.80 30.20 30.50 H 37.80 38.00 38.30 I 11.70 11.82 12.20 J 0.75 0.80 0.85 K 12.50 12.75 13.00 M 25.00 25.75 25.50 N 6.70 6.90 7.05 O 4.10 4.20 4.50 P 1.90 2.00 2.10 Q 3.20 3.36 3.60 R 26.60 26.78 27.00 S -0.03 0.05 0.10
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Ordering Information
Part number SLS120J060A-ISBTH Package SOT-227 Unit quantity 100EA Packing type Tube
https://www.sanan-semiconductor.com/en Important Notices – Read Carefully Before you use our products, you are requested to carefully read this document and fully understand its contents. Hunan Sanan Semiconductor Co., Ltd. (Hunan Sanan) shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of Hunan Sanan’s products. Hunan Sanan Semiconductor Datasheets are subject to change. Information presented in this document is from the characterization of engineering lo ts. Hunan Sanan reserves the right to change limits, test conditions, and dimensions without notice. Information contained in this document are typical values and shall in no event be rega rded as a guarantee of characteristics. With respect to any informat ion regarding the application of the product, Hunan Sanan hereby disclaims all warranties and liabilities of any kind. The information in this document is exclusively for trained technical staff. It is the responsibility of the customer’s technical departm ent to decide the sui tability of the product in the custo mer’s application and H unan Sanan assumes no responsibility or liabilit y whatsoever f or the use of the information contained in this document. In case there is any clause in this document or in any other documents which is contradictory to this clause, this clause shall prevail. This clause shall survive after termination of this document. Warning Due to technical requirements, Hunan Sanan products may contain dangerous substances. For detailed information about the substance(s), please contact the Hunan San an office. Hu nan Sanan bears no responsibility for any damage whatsoever due to the substance(s) used in Hunan Sanan products. Contact info Website: https://www.sanan-semiconductor.com/ https://www.sanan-semiconductor.com/en