ADS065J001B3 SANAN | Alldatasheet
Document overview
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Technical content
Datasheet sections
Features
AEC-Q101 qualified Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant
Applications
DC/DC converter for EV/HEV On board charger (OBC)
Description
The ADS065J001B3 SiC Schottky Barrier Diode (SBD) has been developed using Sanan’s advanced 3rd generation SiC SBD technology with the highest performance and reliability. It registers higher efficiency, higher operation temperature and lower loss and can be operated at higher frequency than Si -based solutions. As to the Schottky structure, it shows no recovery at turn-off and allows a low leakage current with reverse voltage up to 650V. It can contribute to system miniaturization and achieve lightweight system design. Using RoHS compliant components and being AEC-Q101 qualified, it is qualified for use in automotive application. Product Specifications Device VRRM IF (135℃) VF (25℃) QC ADS065J001B3 650V 1.2A 1.30V 3.2nC Cathode Anode
Table 1. Maximum Ratings
1.2 TC = 135℃
1.0 TC = 147℃
Table 2. Thermal Resistance
Table 3. Static Electrical Characteristics Table 4. Dynamic Electrical Characteristics
https://www.sanan-semiconductor.com/en Figure 5. Total capacitance charge vs. reverse voltage
Ordering Information
https://www.sanan-semiconductor.com/en Important Notices – Read Carefully Before you use our products, you are requested to carefully read this document and fully understand its contents. Hunan Sanan Semiconductor Co., Ltd. (Hunan Sanan) shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of Hunan Sanan’s products. Hunan Sanan Semiconductor Datasheets are subject to change. Information presented in this document is from the characterization of engineering lots. Hunan Sanan reserve s the right to change limits, test conditions, and dimensions without notice. Information contained in this document are typical values and shall in no event be regarded as a guarantee of characteristics. With respect to any information regarding the application of the product, Hunan Sanan hereby disclaims all warranties and liabilities of any kind. The information in this document is exclusively for trained technical staff. It is the responsibility of the customer’s technical department to decide the suita bility of the product in the customer’s application and Hunan Sanan assumes no responsibility or liability whatsoever for the use of the information contained in this document. In case there is any clause in this document or in any other documents which i s contradictory to this clause, this clause shall prevail. This clause shall survive after termination of this document. Warning Due to technical requirements, Hunan Sanan products may contain dangerous substances. For detailed information about the substa nce(s), please contact the Hunan Sanan office. Hunan Sanan bears no responsibility for any damage whatsoever due to the substance(s) used in Hunan Sanan products. Contact info Website: https://www.sanan-semiconductor.com/ https://www.sanan-semiconductor.com/en