SD723 POLYFET | Alldatasheet
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165.0 10.5 135.0
0.65 C/W
3.9 28.50 3.0 0.25 7.50 15.0270 0.30 PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS Common Source Power Gain Drain Efficiency Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Source Voltage Gate to Source Voltage -65 C to 150 C C A V Load Mismatch ToleranceVSWR Drain to Gate Voltage Relative 0.80 60.00Ids = mA, Vgs = 0V V, Vgs = 0V Ciss Crss Coss Vds = Idq = A, Vds = V, F = 0.80 Bvdss Idss Drain Breakdown Voltage V mA pF pF pF Common Source Output Capacitance Common Source Feedback Capacitance Idq = Idq = 0.80 175 Vgs = 20V, Ids = Rdson Saturation Resistance Forward TransconductancegM Vds = 10V, Vgs = 5V POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com 175 175 Common Source Input Capacitance 36 V Igss Vgs Idsat Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Saturation Current uA V Mho Ohm Amp PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS ELECTRICAL CHARACTERISTICS ( EACH SIDE ) RF CHARACTERISTICS ( 60.0 ABSOLUTE MAXIMUM RATINGS ( T = Gps 12.5 A, Vds = V, F = A, Vds = V, F = 12.5 12.5 Watts V MHz MHz MHz Watts Package Style 60.0 Vds = 0V Vgs = 30V Vgs = 20V, Vds = 10V HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description 12.5Vds = A, Vgs = VdsIds = A η dB oo oo o Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances, resulting in high F transistors with high input impedance and high efficiency. TM t SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTORVDMOS Vgs = 0V, F = 1 MHz12.5 Vds = Vgs = 0V, F = 1 MHz12.5 Vds = Vgs = 0V, F = 1 MHz12.5 REVISION 10/01/2007
25 C )
WATTS OUTPUT ) 200 polyfet rf devices SD723 20:1 ROHS COMPLIANT
S1C 3 DIE ID & GM Vs VG 0.10 1.00 10.00 100.00 0 2 4 6 8 10 12 14 16 18 Vgs in Volts Id in amps; Gm in mhos Id gM S1C 3 DICE CAPACITANCE 100 1000 0 2 4 6 8 1 01 21 41 61 82 0 VDS IN VOLTS Coss Ciss Crss SD723 Pout/Gain v s Pin F=175MHz, Vds = 12.5Vdc, Idq = 800ma Pin in Watts 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 Efficiency@60W=67% Pout Gain POLYFET RF DEVICES POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE ID & GM VS VGSIV CURVE Zin Zout PACKAGE DIMENSIONS IN INCHES SD723 S1C 3 DIE IV 0 2 4 6 8 10 12 14 16 18 20 VDS IN VO LTS ID IN AMPS vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com REVISION 10/01/2007 Tolerance .XX +/-0.01 .XXX +/-.005 inches