SR746 POLYFET | Alldatasheet
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Technical content
102.0 1.2 288.0
0.35 C/W
4.8 21.00 6.0 0.50 6.00 18.5465 0.30 125 PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS Common Source Power Gain Drain Efficiency Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Source Voltage Gate to Source Voltage -65 C to 150 C200 C A V Load Mismatch ToleranceVSWR Drain to Gate Voltage 20:1 Relative 0.80 60.00Ids = mA, Vgs = 0V V, Vgs = 0V Ciss Crss Coss Vds = Idq = A, Vds = V, F = 0.80 Bvdss Idss Drain Breakdown Voltage V mA pF pF pF Common Source Output Capacitance Common Source Feedback Capacitance Idq = Idq = 0.80 175 Vgs = 20V, Ids = Rdson Saturation Resistance Forward TransconductancegM Vds = 10V, Vgs = 5V POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com 175 175 Common Source Input Capacitance 125 V Igss Vgs Idsat Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Saturation Current 1 7 uA V Mho Ohm Amp PARAMETERSYMBOL MIN TYP MAX UNITS TEST CONDITIONS ELECTRICAL CHARACTERISTICS ( EACH SIDE ) RF CHARACTERISTICS ( 300.0 ABSOLUTE MAXIMUM RATINGS ( T = Gps 50.0 A, Vds = V, F = A, Vds = V, F = 50.0 50.0 Watts V MHz MHz MHz Watts Package Style 300.0 Vds = 0V Vgs = 30V Vgs = 20V, Vds = 10V HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description 50.0Vds = A, Vgs = VdsIds = A η dB oo oo o Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency. TM t SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTORVDMOS Vgs = 0V, F = 1 MHz50.0 Vds = Vgs = 0V, F = 1 MHz50.0 Vds = Vgs = 0V, F = 1 MHz50.0 REVISION 03/08/2001
25 C )
WATTS OUTPUT )
S1E 6 DIE ID & GM Vs VG 0.10 1.00 10.00 100.00 0 2 4 6 8 10 12 14 16 18 Vgs in Volts Id in amps; Gm in mhos Id gM S1E 6 DIE CAPACITANCE 100 1000 0 5 10 15 20 25 30 35 40 45 50 VDS IN VOLTS Coss Ciss Crss SR 746 Pin vs Pout F=175 MHZ; IDQ=.8A; VDS=50V 100 150 200 250 300 350 400 450 0 5 10 15 20 PIN IN WATTS Efficiency = 65% Pout Gain 1dB compression = 300W POLYFET RF DEVICES POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE ID & GM VS VGSIV CURVE S11 & S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES SR746 S1E 6 DIE IV 0 2 4 6 8 10 12 14 16 18 20 VDS IN VOLTS ID IN AMPS vg=2v Vg=4v Vg=6v vg=8v 0 vg=12v 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com REVISION 03/08/2001 Tolerance .XX +/-0.01 .XXX +/-.005 inches