F1120 POLYFET | Alldatasheet
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RF CHARACTERISTICS ( WATTS OUTPUT )200 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PATENTED GOLD METALIZED
200 Watts Gemini
HIGH EFFICIENCY, LINEAR, ABSOLUTE MAXIMUM RATINGS (TC = 25 C)o Total Device Junction to Case Thermal Maximum Junction Storage Temperature DC Drain Current Drain to Gate Drain to Source Gate to Source 440 Watts 0.4 Co200 -65 to 150 20 A 30VVV70 70 ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Gps η VSWR Common Source Power Gai Drain Efficienc Load Mismatch Toleranc dB Relative 20:1 Idq = Idq = Idq = 28.0Vds = V, 28.0Vds = V, 28.0Vds = V, F = 175 MHz F = 175 MHz F = 175 MHz Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss Drain Breakdown Voltag Zero Bias Drain Curren Gate Leakage Curren Gate Bias for Drain Curren Forward Transconductanc Saturation Resistanc Saturation Curren Common Source Input Capacitanc Common Source Feedback Capacitanc Common Source Output Capacitanc 0.18 200 150 Mho Ohm Amp pF V V pF pF mA uA 0.25Ids = A, Vgs = 0V 28.0Vds = V, Vgs = 0V Vds = 0 V, Vgs = 30V 0.5Ids = A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 20 Vgs = 20V, Vds = 10V 28.0Vds = V, Vgs = 0V, F = 1 MHz A 28.0Vds = V, Vgs = 0V, F = 1 MHz 28.0Vds = V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com REVISION SILICON GATE ENHANCEMENT MODE RF POWER HIGH GAIN, LOW NOISE "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F enhance broadband performance t TM Co CoC/Wo F1120 polyfet rf devices Dissipation Resistance Temperature Voltage Voltage Voltage 1/12/98 VDMOS TRANSISTOR
F1120 POUT VS PIN F=175 MHZ; IDQ=2.0A; VDS=28.0V 100 150 200 250 0 2 4 6 8 10 12 14 16 18 20 PIN IN WATTS 10.00 11.00 12.00 13.00 14.00 15.00 16.00 17.00 18.00 POUT GAIN Efficiency = 75% POUT VS PIN GRAPH F1120 F1J 5 DICE CAPACITANCE 100 1000 0 5 10 15 20 25 30 VDS IN VOLTS Coss Ciss Crss F1J 5 DICE IV 0 2 4 6 8 10 12 14 16 18 20 VDS IN VOLTS ID IN AMPS vg=2v Vg=4v Vg=6v vg=8v vg=10v vg=12v F1J 5 DICE ID & GM Vs VG 0.10 1.00 10.00 100.00 0 2 4 6 8 10 12 Vgs in Volts Id in amps; Gm in mhos Id gM POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com CAPACITANCE VS VOLTAGE IV CURVE ID AND GM VS VGS S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES REVISION 1/12/98