ST744 POLYFET | Alldatasheet
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68.0 0.8 192.0 0.85 C/W 125 3.2 14.00 4.0 0.65 4.00 7.0 190 0.20 125 PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Common Source Power Gain Drain Efficiency Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Source Voltage Gate to Source Voltage -65 C to 150 C C A V Load Mismatch Tolerance VSWR Drain to Gate Voltage Relative 0.80 40.00 Ids = mA, Vgs = 0V V, Vgs = 0V Ciss Crss Coss Vds = Idq = A, Vds = V, F = 0.80 Bvdss Idss Drain Breakdown Voltage V mA pF pF pF Common Source Output Capacitance Common Source Feedback Capacitance Idq = Idq = 0.80 175 Vgs = 20V, Ids = Rdson Saturation Resistance Forward Transconductance gM Vds = 10V, Vgs = 5V POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com 175 175 Common Source Input Capacitance 125 V Igss Vgs Idsat Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Saturation Current uA V Mho Ohm Amp PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ELECTRICAL CHARACTERISTICS ( EACH SIDE ) RF CHARACTERISTICS ( 100.0 ABSOLUTE MAXIMUM RATINGS ( T = Gps 50.0 A, Vds = V, F = A, Vds = V, F = 50.0 50.0 Watts V MHz MHz MHz Watts Package Style 100.0 Vds = 0V Vgs = 30V Vgs = 20V, Vds = 10V HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description 50.0 Vds = A, Vgs = Vds Ids = A η dB o o o o o Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances, resulting in high F transistors with high input impedance and high efficiency. TM t SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR VDMOS Vgs = 0V, F = 1 MHz 50.0 Vds = Vgs = 0V, F = 1 MHz 50.0 Vds = Vgs = 0V, F = 1 MHz 50.0 REVISION 07/17/2003
25 C )
WATTS OUTPUT ) 200 polyfet rf devices ST744 5:1
S1E 4 DIE ID & GM Vs VG 0.10 1.00 10.00 100.00 Vgs in Volts Id in amps; Gm in mhos Id gM S1E 4 DIE CAPACITANCE 0.1 100 1000 VDS IN VOLTS Coss Ciss Crss S T 7 4 4 P in v s P o u t F re q = 1 7 5 M h z ;V d s = 5 0 V d c , Id q = 8 0 0 m a 100 120 140 P in in w a tts Pout Gain Efficiency@100W=45% POLYFET RF DEVICES POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE ID & GM VS VGS IV CURVE Zin Zout PACKAGE DIMENSIONS IN INCHES ST744 S1E 4 DIE IV VDS IN VOLTS ID IN AMPS vg=2v Vg=4v Vg=6v vg=8v vg=12v 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com REVISION 07/17/2003 Tolerance .XX +/-0.01 .XXX +/-.005 inches