SBL2060FCT JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Diodes SB L2060FCT SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VRR M Peak repetitive reverse voltage VRW M Working peak reverse voltage VR DC blocking voltage V VR( RMS) RMS reverse voltage 42 V IO Ave rage rectified output current 20 A IFS M Non-Repetitive peak forward surge current 8.3ms half sine wave 150 A PD Po wer dissipation 2 W RΘJA T hermal resistance from junction to ambient 50 ℃/W Tj Jun ction temperature 125 ℃ Tst g Storage temperature -55~+150 ℃ EL ECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Re verse voltage V(BR) I R=0.5mA 60 V Re verse current IR V R=60V 0.45 mA Fo rward voltage VF I F=10A 0.7 V Ty pical total capacitance Ctot V R=4V,f=1MHz 600 pF TO -220F ANODE 2. CATHODE 3. ANODE www.cj-elec.com 1 D,Apr,2016 1 32
www.cj-elec.com 2 D,Apr,2016 Min. Max . Min. Max. A 4.300 4.700 0.169 0.185 A2 2.800 3.200 0.110 0.126 A3 2.500 2.900 0.098 0.114 b 0.500 0.750 0.020 0.030 b1 1.100 1.350 0.043 0.053 b2 1.500 1.750 0.059 0.069 c 0.500 0.750 0.020 0.030 D 9.960 10.360 0.392 0.408 E 14.800 15.200 0.583 0.598 e F Ф h 0.000 0.300 0.000 0.012 L 28.000 28.400 1.102 1.118 L1 1.700 1.900 0.067 0.075 L2 0.900 1.100 0.035 0.043 2.700 REF. 3.500 REF. 0.138 REF. 0.106 REF. 0.800 REF. 0.500 REF. 0.031 REF. 0.020 REF. Symbol Dimensions In Millimeters Dimensions In Inches 2.540 TYP. 0.100 TYP. 1.300 REF. 0.051 REF.