SBL1030 JIANGSU | Alldatasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220A Plastic-Encapsulate Diodes SBL1030,35,40,45,50,60 SCHOTTKY BARRIER RECTIFIER
FEATURES
Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss,High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop For Use in Low Voltage, High Frequency Inverters,Free Wheeling, and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Value Symbol Parameter SBL 1030 SBL 1035 SBL 1040 SBL 1045 SBL 1050 SBL 1060 Unit VRRM Peak repetitive reverse voltage VRWM Working peak reverse voltage VR DC blocking voltage 30 35 40 45 50 60 V VR(RMS) RMS reverse voltage 21 24.5 28 31.5 35 42 V IO Average rectified output current@ Tc=95℃ 10 A IFSM Non-Repetitive peak forward surge current 8.3ms half sine wave 250 A PD Power dissipation 2 W RΘJA Thermal resistance from junction to ambient 50 ℃/W Tj Junction temperature 125 ℃ Tstg Storage temperature -55~+150 ℃ TO-220A 1. CATHODE 2. ANODE www.cj-elec.com 1 B,Oct,2014
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Device Test conditions Min Typ Max Unit SBL1030 30 SBL1035 35 SBL1040 40 SBL1045 45 SBL1050 IR=0.5mA Reverse voltage V(BR) SBL1060 60 V SBL1030 VR=30V SBL1035 VR=35V SBL1040 VR=40V SBL1045 VR=45V SBL1050 VR=50V Reverse current IR SBL1060 VR=60V 0.45 mA SBL1030-1045 0.55 Forward voltage VF SBL1050,1060 IF=10A 0.7 V www.cj-elec.com 2 B,Oct,2014
www.cj-elec.com 3 B,Oct,2014 Min Max Min Max A 4.470 4.670 0.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 0.491 e e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 h 0.000 0.300 0.000 0.012 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 L2 1.000 0.039 Φ 3.735 3.935 0.147 0.155 Symbol Dimensions In Millimeters Dimensions In Inches 0.100 TYP2.540 TYP