S9015W JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9015W TRANSISTOR (PNP)

FEATURES

 Small Surface Mount Package  High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 200 mW RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC=-100µA, IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-50V, IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA DC current gain hFE VCE=-5V, IC=-1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100mA, IB=-10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100mA, IB=-10mA -1 V Base-emitter voltage VBE VCE=-5V, IC=-1mA -0.6 -0.75 V Transition frequency fT VCE=-5V,IC=-10mA , f=30MHz 150 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 7 pF CLASSIFICATION OF hFE RANK L H RANGE 200–450 450–1000 MARKING M6 SOT–323 1. BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 A,Jun,2014www.cj-elec.com B,Nov,2014 JC(T

-0.1 -1 -10 -0.1 -1 -10 -100 100 1000 0 25 50 75 100 125 150 100 150 200 250 -0 -2 -4 -6 -8 -0.1 -1 -10 -100 100 1000 -1 -10 -100 -0.1 -0.1 -10 -100 -1 -10 -100 -0.01 -0.1 -20 f=1MHz I E =0/I C T a =25 V CB / V EB C ob / C ib C ob C ib CAPACITANCE C (pF) REVERSE VOLTAGE V R (V) COMMON EMITTER V CE =-5V T a =25 TRANSITION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) P C —— T a COLLECTOR POWER DISSIPATION P C (mW) AMBIENT TEMPERATURE T a ( ) -6uA -8uA -10uA -12uA -16uA -20uA -18uA -14uA COMMON EMITTER T a =25 -4uA I B =-2uA Static Characteristic COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) COMMON EMITTER V CE = -5V I C T a =25 T a =100 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -0.2-0.2 I C f T h FE β=10 I C V BEsat T a =100 T a =25 BASE-EMITTER SATURATION VOLTAGE V BEsat (V) COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =-5V V BE I C T a =100 T a =25 COLLECTOR CURRENT I C (mA) BASE-EMMITER VOLTAGE V BE (V) β=10 T a =100 T a =25 I C V CEsat COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) COLLECTOR CURRENT I C (mA) www.cj-elec.com 2 A,Jun,2014www.cj-elec.com B,Nov,2014 Typical Characteristics

A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com B,Nov,2014

www.cj-elec.com 4 A,Jun,2014www.cj-elec.com B,Nov,2014