S9015LT1 JIANGSU | Alldatasheet

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Technical content

  1. 9 0. 95 0. 95 2. 9 0. 4 1. 3 2. 4 1. 0 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR（ PNP ）

FEATURES

PCM : 0.2 W（Tamb=25℃） Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100μ A， IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA， IB=0 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100μ A， IC=0 V Collector cut-off current ICBO VCB=-50 V , IE=0 -0.1 μ A Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 μ A DC current gain HFE(1) VCE=-5V, IC= -1mA 200 1000 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB=-10mA V Transition frequency fT VCE=-5V, IC= -10mA f=30MHz 150 MHz CLASSIFICATION OF HFE(1) Rank L H Range 200- 450 450- 1000 DEVICE MARKING : S9015LT1=M6 Unit : mm SOT—23 1. BASE 2. EMITTER 3. COLLECTOR

SOT-23 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L θ Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 Dimensions In Millimeters Dimensions In Inches 0.037TPY 0.022REF 0.950TPY 0.550REF D A E L b C 0.2 e θ