S9014W JIANGSU | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S90 14W TRANSISTOR (NPN)

FEATURES

 Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCB O Collector-Base Voltage 50 V VCE O Collector-Emitter Voltage 45 V VEB O Emitter-Base Voltage 5 V IC Co llector Current 100 mA PC Co llector Power Dissipation 200 mW RΘJ A Thermal Resistance From Junction To Ambient 625 ℃/W Tj Jun ction Temperature 150 ℃ Tst g Storage Temperature -55～+150 ℃ EL ECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Co llector-base breakdown voltage V(BR)CBO I C=100µA, IE=0 50 V Co llector-emitter breakdown voltage V(BR)CEO I C=100µA, IB=0 45 V Em itter-base breakdown voltage V(BR)EBO I E=100µA, IC=0 5 V Co llector cut-off current ICBO V CB=50V, IE=0 100 nA Co llector cut-off current ICEO V CE=35V, IB=0 1 uA Em itter cut-off current IEBO V EB=4V, IC=0 100 nA DC current gain hFE V CE=5V, IC=1mA 200 1000 Co llector-emitter saturation voltage VCE(sat) I C=100mA, IB=5mA 0.3 V Ba se-emitter saturation voltage VBE(sat) I C=100mA, IB=5mA 1 V Ba se-emitter voltage VBE V CE=5V, IC=2mA 0.58 0.7 V Tr ansition frequency fT V CE=5V,IC=10mA , f=30MHz 150 MHz Co llector output capacitance Cob V CB=10V, IE=0, f=1MHz 3.5 pF CL ASSIFICATION OF hFE RANK L H RA NGE 200–450 450–1000 MA RKING J6 SOT–3 BASE 2. EMITTER 3. COLLECTOR www.cj-elec.com 1 AJun,2014www.cj-elec.com &6HS JC(T

0.1 1 10 0.1 100 0 25 50 75 100 125 150 100 150 200 250 0.0 0 .3 0.6 0.9 1.2 0.1 100 024 0.1 1 10 100 0.1 0.1 1 10 100 100 1000 0.1 1 10 100 0.01 0.1 0.1 1 10 100 100 1000 f=1M Hz IE=0/IC=0 Ta=25 ℃ VCB/ VEBCob/ Cib — Cob Cib CAPACIT ANCE C (pF) REVERSE VO LTAGE VR (V) PC — — T a CO LLECTOR POWER DISSIPATION PC (mW) AM BIENT TEMPERATURE Ta ( COM MON EMITTER VCE= 5V VBEIC — Ta=100℃ Ta=25℃ COLLECTOR CURRENT IC (mA) BASE- EMMITER VOLTAGE VBE (V) 20uA C OMMON EMITTER Ta=25℃ 18uA 16uA 14uA 12uA 10uA 8uA 6uA 4uA IB=2uA S tatic Characteristic COLLECTOR CURRENT IC (mA) COLLECTOR-EM ITTER VOLTAGE VCE (V) fT — hFE — β=20 ICVB Esat — Ta=100℃ Ta=25℃ BASE- EMITTER SATURATION VOLTAGE VBEs at (V) COLLECTOR CURRENT IC (m COM MON EMITTER VCE= 5V IC IC Ta=25℃ Ta=100℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (m β=20 Ta=100℃ Ta=25℃ ICVC Esat — COLLECTOR-EMITTER SATURATION VO LTAGE VCE sat (V) COLLECTOR CURRENT IC (m COM MON EMITTER VCE=5V Ta=25℃ TRA NSITION FREQUENCY fT (MHz COLLECTOR CURRENT IC (m www.cj-elec.com 2www.cj-elec.com T ypical Characteristics AJun,2014&6HS

x A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 3www.cj-elec.com AJun,2014&6HS

www.cj-elec.com 4www.cj-elec.com AJun,2014&6HS