S9011LT1 JIANGSU | Alldatasheet

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Technical content

  1. 9 0. 95 0. 95 2. 9 0. 4 1. 3 2. 4 1. 0 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9011LT1 TRANSISTOR（ NPN ）

FEATURES

PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μ A， IE=0 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA， IB=0 V Emitter-base breakdown voltage V(BR)EBO IE=100μ A， IC=0 V Collector cut-off current ICBO VCB=16 V , IE=0 0.1 μ A Collector cut-off current ICEO VCE=16V , IB=0 0.1 μ A Emitter cut-off current IEBO VEB= 3.5V , IC=0 0.1 μ A DC current gain hFE(1) VCE=5V, IC= 1mA 200 Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB= 1mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=10 mA, IB= 1mA V Transition frequency fT VCE=5V, IC= 1mA f=30MHz 150 MHz DEVICE MARKING: S9011LT1= 1T Unit : mm SOT—23 1. BASE 2. EMITTER 3. COLLECTOR

SOT-23 PACKAGE OUTLINE DIMENSIONS Symbol A b c D E e L θ Min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 Max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 Min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 Max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 Dimensions In Millimeters Dimensions In Inches 0.037TPY 0.022REF 0.950TPY 0.550REF D A E L b C 0.2 e θ