S2AF HDSEMI | Alldatasheet
Document overview
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Technical content
Features
o
- VRRM 50V-1000V
- High surge current capability
Applications
- Rectifier Marking Polarity: Color band denotes cathode Glass passivated chip ● S2AF-S2MF : S2A-S2M S2AF THRU S2MF Item Symbol Unit Symbol Item I I Thermal Resistance(Typical) Peak Forward Voltage I FM =2.0A l I F(AV) I FSM I 2.0 60Hz Half-sine wave,1 cycle, Ta=25℃ V RMS V 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 JF KFAF BF DF MF GF 100 60Hz Half-sine wave, Resistance load, TL=110℃ Maximum RMS Voltage
H igh Diode Semiconductor FIG.1: FORWARD CURRENT DERATING CURVE IO(A) 60Hz Resistive or Inductive Load (7.0mm×7.0mm)Copper Pad Areas TL( 70 90 110 130 150 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IFSM(A) Number of Cycles FIG.2: MAXIMUM NON-REPETITIVE FORWARD URGE CURRENT 8.3ms Single Half Sine Wave 11 0 1 0 0 IF(A) FIG.3: TYPICAL FORWARD CHARACTERISTICS TJ=25 Pulse width=300us 1% Duty Cycle 0.01 0.1 1.0 0.5 VF(V)
H igh Diode Semiconductor 4.65 1.9 0.55 SMAF SMAF Dimensions in inches and (millimeters) .146(3.70) .130(3.30) .106(2.70) .094(2.40) .063(1.60) .051(1.30) .193(4.90) .173(4.40) .009(0.23) .007(0.18) .051(1.30) .039(1.00) .047(1.20) .035(0.90)
H igh Diode Semiconductor Reel Taping Specifications For Surface Mount Dev ices- SMAF