RT9911

RT9911 RICHTEK | Alldatasheet

Document overview

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Technical content

Features

zzzzz 1.6V to 5.5V Battery Input Voltage Range zzzzz Synchronous Boost/Buck Selectable DC-DC Converter \Internal Switches \Up to 95% Efficiency zzzzz Syn-Buck DC-DC Converters \0.8V to 5.5V Adjustable Output Voltage \Up to 95% Efficiency \100%(MAX) Duty Cycle \Internal Switches zzzzz Main Boost DC-DC Converter \Adjustable Output Voltage \Up to 97% Efficiency zzzzz PWM Converter for CCD Positive Voltage zzzzz Inverter for CCD Negative Voltage zzzzz White LED Driver for LCD Panel Backlight zzzzz Up to 1.4MHz Adjustable Switching Frequency zzzzz 1μμμμμA Supply Current in Shutdown Mode zzzzz External Compensation Network for all Converters zzzzz Independent Enable Pin to Shutdown Each Channel. zzzzz 40-Lead VQFN Package zzzzz RoHS Compliant and 100% Lead (Pb)-Free

Applications

Ordering Information

Note : Richtek Pb-free and Green products are : \RoHS compliant and compatible with the current require- ments of IPC/JEDEC J-STD-020. \Suitable for use in SnPb or Pb-free soldering processes. \`100% matte tin (Sn) plating. Pin Configurations (TOP VIEW) VQFN-40L 6x6 RT9911 Package Type QV : VQFN-40L 6x6 (V-Type) Operating Temperature Range P : Pb Free with Commercial Standard G : Green (Halogen Free with Commer- cial Standard) GND OK2 RT VREF VDDM GND FB1 COMP1 PGND1 LX1 LX2 PGND2 FB3 COMP3 CS3 DRN3 DRP3 VFB6 CFB6 COMP6 COMP2 PVDD2 EN6 EN5 EN4 EN3 EN2 EN1 FB2 SELECT EXT6 PVDD3 PVDD1 COMP5 FB5 EXT5 PVDD5 COMP4 EXT4 FB4 31323334353637383940 20191817161514131211 GND

Figure 1. Application Circuit for 2-Cells Battery Supply z Bottom pad is GND pad, can be short to pin 6 (GND). z Please remove Q2 when use Async Boost and remove D5 when use Sync Boost.

24 EN1

29 PGND2

Figure 2. Application Circuit for Li-ion Battery Supply z Bottom pad is GND pad, can be short to pin 6 (GND). z Please remove Q2 when use Async Boost and remove D5 when use Sync Boost.

DS9911-04 August 2007www.richtek.com RT V DDM GND VDDM 1.0V VREF 0.8V FB1 COMP 1 PGND1 LX1 PVDD1 COMP5FB5 + EXT5 PVD D 5 1.0V FB4 COMP 4 Pin No. Pin Name Pin Function I/O Int ernal St at e at Shut Down I/O Configuration

1 GND Analog Ground Pin -- --

2 OK2 External Switch Control. OUT High Impedance 3 RT Frequency Setting Pin. Frequency is 500kHz if RT pin not connected. OUT Pull Low

5 VDDM Device Input Power Pin IN --

6 GND Analog Ground Pin -- --

4 VREF 1.0V Reference Pin OUT High Impedance 7 FB1 Feedback Input Pin of CH1. IN High Impedance

8 COMP1 Feedback Compensation Pin of

CH1. OUT Pull Low 9 PGND1 Power Ground Pin of CH1. -- -- 10 LX1 Switch Node of CH1. OUT High Impedance 11 PV DD1 Power Input Pin of CH1. IN --

12 COMP5 Feedback Compensation Pin of

CH5. OUT Pull Low 13 FB5 Feedback Input Pin of CH5. IN High Impedance 14 EXT5 External Power Switch of CH5. OUT Pull High

15 PVDD5 Power Input Pin of CH4, CH5 and

CH6. IN - -

16 COMP4 Feedback Compensation Pin of

CH4. OUT Pull Low 17 FB4 Feedback Input Pin of CH4. IN High Impedance OK 2 GND Functional Pin Description To be continued

DS9911-04 August 2007 www.richtek.com EXT4 PVDD5 EXT6 PVDD5 50uA VFB6 1.0V DRN3 PVDD3 CS3 VDDM DRP3 PVDD3 0.2V CFB6 COMP6 Pin No. Pin Name Pin Function I/O Internal State at Shut Down I/O Configuration 18 EXT4 External Power Switch of CH4. OUT Pull Low 19 EXT6 External Power Switch of CH6. OUT Pull Low 20 PVDD3 Power Input Pin of CH3. IN -- 24 DRP3 External PMOS Switch Pin for CH3. OUT Pull High

21 COMP6 Feedback Compensation Pin of

CH6. OUT Pull Low

22 CFB6 Current Feedback Input Pin for

CH6. IN High Impedance

23 VFB6 Voltage Feedback Input Pin for

CH6. IN High Impedance 25 DRN3 External NMOS Switch Pin for CH3. OUT Pull Low

26 CS3 Current Sense Input Pin for CH3 IN High Impedance

DS9911-04 August 2007www.richtek.com PGND2 LX2 PVDD2 0.8V FB2 COMP2 SELECT 2uA VDDM EN1 2uA VDDM EN2 2uA VDDM Pin No. Pin Name Pin Function I/O Internal State at Shut Down I/O Configuration

27 COMP3 Feedback Compensation Pin of

28 FB3 Feedback Input Pin of CH3. IN High Impedance

29 PGND2 Power Ground Pin of CH2 -- --

30 LX2 Switch Node of CH2 OUT High Impedance

31 PVDD2 Power Input Pin of CH2. IN --

32 COMP2 Feedback Compensation Pin of

CH2. OUT Pull Low 33 FB2 Feedback Input Pin of CH2. IN High Impedance

34 SELECT

CH1 Boost/Buck Selection Pin. Logic state can’t be changed during operation. IN Pull Low 35 EN1 Enable Input Pin of CH1. IN Pull Low 36 EN2 Enable Input Pin of CH2. IN Pull Low 0.8V FB3 COMP3 To be continued

DS9911-04 August 2007 www.richtek.com EN3 2uA VDDM EN4 2uA VDDM EN5 2uA VDDM EN6 2uA VDDM Pin No. Pin Name Pin Function I/O Internal State at Shut Down I/O Configuration 37 EN3 Enable Input Pin of CH3. IN Pull Low 38 EN4 Enable Input Pin of CH4. IN Pull Low 39 EN5 Enable Input Pin of CH5. IN Pull Low 40 EN6 Enable Input Pin of CH6. IN Pull Low Exposed Pad (41) GND The exposed pad must be soldered to a large PCB and connected to GND for maximum power dissipation. -- --

DS9911-04 August 2007www.richtek.com Function Block Diagram CH1 C-Mode Step-Up or Step-Down 0.8V REF CH2 C-Mode Step-Down 0.8V REF CH3 C-Mode Step-Up 0.8V REF CH4 V-Mode Step-Up PWM PVDD5 1.0V REF CH5 Inverter 1.0V REF CH6 WLED PVDD5 1.0V REF50uA 0.2V REF Switch Controller Oscillator Thermal Shutdown OK2 VREF VFB6 CFB6 COMP6 EXT6 COMP5 FB5 EXT5 PVDD5 COMP4 EXT4 FB4 EN6 EN5 EN4 VDDM GND FB1 COMP1 PGND1 LX1 LX2 PGND2 FB3 COMP3 CS3 DRN3 DRP3 PVDD3 PVDD1 COMP2 PVDD2 EN2 EN1 FB2 SELECT EN3 PVDD3 RT

DS9911-04 August 2007 www.richtek.com Absolute Maximum Ratings (Note 1) z Power Dissipation, PD @ TA = 25°C z Package Thermal Resistance (Note 4) z ESD Susceptibility (Note 2) Recommended Operating Conditions (Note 3)

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Units Supply Voltage VDDM Minimum Startup Voltage V ST (Note 5) -- -- 1.6 V VDDM Operating Voltage V DDM VDDM Pin Voltage 2.4 -- 5.5 V VDDM Over Voltage Protection 5.9 6.5 -- V Supply Current Shutdown Supply Current into VDDM I OFF EN1 = EN2 = EN3 = EN4 = EN5 = EN6 = 0V -- 1 10 uA CH1 (Sync-Boost or Syn-Buck) Supply Current into VDDM IQ1 V DDM = 3.3V, Non-Switching -- -- 430 uA CH2 (Sync-Buck) Supply Current into VDDM IQ2 V DDM = 3.3V, Non-Switching -- -- 350 uA CH3 (Sync-Boost) Supply Current into VDDM IQ3 V DDM = 3.3V, Non-Switching -- -- 350 uA CH4 (Asyn-Boost) Supply Current into VDDM IQ4 V DDM = 3.3V, Non-Switching -- -- 300 uA CH5 (Asyn-Inverter) Supply Current into VDDM IQ5 V DDM = 3.3V, Non-Switching -- -- 300 uA CH6 (Asyn-Boost) Supply Current into VDDM IQ6 V DDM = 3.3V, Non-Switching -- -- 350 uA (VDDM = 3.3V, TA = 25°C, unless otherwise specified)

DS9911-04 August 2007www.richtek.com Parameter Symbol Test Conditions Min Typ Max Units Oscillator Operation Frequency f OSC RT Open 450 550 650 kHz CH1 Maximum Duty Cycle (Boost) D MAX1 SELECT = 3.3V, V FB1 = 0.7V 80 85 90 % CH1 Maximum Duty Cycle (Buck) D MAX1 SELECT = 0V, V FB1 = 0.7V 100 -- -- % CH2 Maximum Duty Cycle D MAX2 V FB2 = 0.7V 100 -- -- % CH3 Maximum Duty Cycle D MAX3 V FB3 = 0.7V 75 80 90 % CH4 Maximum Duty Cycle D MAX4 VFB4 = 0.9V CH5 Maximum Duty Cycle D MAX5 VFB5 = 0.1V CH6 Maximum Duty Cycle D MAX6 V CFB6 = 0.18V, VFB6 = 0.9V 90 94 98 % Feedback Regulation Voltage Feedback Regulation Voltage @ FB1, FB2, FB3 VFB1, 2,3 0.788 0.8 0.812 V Feedback Regulation Voltage @FB4 V FB4 0.98 1 1.02 V Feedback Regulation Voltage @ FB5 V FB5 −15 -- +15 mV Feedback Regulation Voltage @ VFB6 V VFB6 -- 1 -- V Feedback Regulation Voltage @ CFB6 V CFB6 0.18 0.2 0.22 V Reference VREF Output Voltage V REF 0.984 1 1.016 V VREF Load Regulation 0uA < I REF < 100uA -- -- 10 mV Error Amplifier GM (CH1, CH2, CH3, CH4, CH5, CH6) -- 0.2 -- ms Compensation Source Current (CH1, CH2, CH3, CH4, CH5, CH6) -- 22 -- uA Compensation Sink Current (CH1, CH2, CH3, CH4, CH5, CH6) -- 22 -- uA Power Switch RDS(ON)P1 P-MOSFET, PV DD1 = 3.3V -- 200 300 m Ω CH1 On Resistance of MOSFET RDS(ON)N1 N-MOSFET, PVDD1 = 3.3V -- 200 300 m Ω CH1 Switch Current Limitation (Buck) SELECT=0 1.3 2 4 A CH1 Switch Current Limitation (Boost) SELECT=1 2 2.5 4 A RDS(ON)P2 P-MOSFET, PV DD2 = 3.3V -- 300 450 m Ω CH2 On Resistance of MOSFET RDS(ON)N2 N-MOSFET, PVDD2 = 3.3V -- 300 450 m Ω CH2 Switch Current Limitation 1.3 2 4 A RDS(ON)NP3 P-MOSFET, PVDD3 = 3.3V -- 6 15 Ω CH3 On Resistance of DRN3 RDS(ON)NN3 N-MOSFET, PVDD3 = 3.3V -- 6 15 Ω RDS(ON)PP3 P-MOSFET, PVDD3 = 3.3V -- 6 15 Ω CH3 On Resistance of DRP3 RDS(ON)PN3 N-MOSFET, PVDD3 = 3.3V -- 6 15 Ω RDS(ON)P4 P-MOSFET, PV DD3 = 3.3V -- 6 15 Ω CH4 On Resistance of MOSFET RDS(ON)N4 N-MOSFET, PVDD3 = 3.3V -- 6 15 Ω To be continued

DS9911-04 August 2007 www.richtek.com Parameter Symbol Test Conditions Min Typ Max Units Power Switch CH 5 On Resistance of MOSFET RDS(O N)P5 P-MOSFET, PV DD5 = 3.3V -- 6 15 Ω RDS(O N)N5 N-MOSFET, PV DD5 = 3.3V -- 6 15 Ω CH 6 On Resistance of MOSFET RDS(O N)P6 P-MOSFET, PV DD5 = 3.3V -- 6 15 Ω RDS(O N)N6 N-MOSFET, PV DD5 = 3.3V -- 6 15 Ω Switch Controller OK2 pin Sink Current OK2 = 1V 90 -- -- uA External Current Setting (CH3) CS3 Sourcing Current I CS3 5 10 15 uA VFB6 Sink Current I VFB6 40 50 60 uA Protection Under Voltage Protection Threshold Voltage @ FB1, FB2 SELECT = 0V 0.3 0.4 0.5 V Over Voltage Protection @ FB1, FB2 SELECT = 0V -- 1 -- V Control EN1, EN2, EN3, EN4, EN5, EN6 Input High Level Threshold VDDM = 3.3V -- -- 1.3 V EN1, EN2, EN3, EN4, EN5, EN6 Input Low Level Threshold VDDM = 3.3V 0.4 -- -- V EN1, EN2, EN3, EN4, EN5, EN6 Sink Current VDDM = 3.3V -- 2 6 uA Select Pin Input High Level Threshold -- -- 1.3 V Select Pin Input Low Level Threshold 0.4 -- -- V Select Pin Sink Current I SELECT -- 2 6 uA Thermal Protection Thermal Shutdown T SD 125 180 -- °C Thermal Shutdown Hysteresis ΔTSD -- 20 -- °C Note 1. Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device. These are for stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability. Note 2. Devices are ESD sensitive. Handling precaution recommended. Note 3. The device is not guaranteed to function outside its operating conditions. Note 4. θJA is measured in the natural convection at T A = 25 °C on a low effective thermal conductivity test board of JEDEC 51-3 thermal measurement standard. Note 5. A Schottky retifier connected from LX1 to PVDD1 is required for low-voltage startup, refer to Figure 1.

DS9911-04 August 2007www.richtek.com Typical Operating Characteristics CH1 Buck Load Transient Response Time (1ms/Div) VOUT (100mV/Div) IOUT (200mA/Div) VIN = 4.2V, V OUT = 3.3V CH1 Boost Load Transient Response Time (1ms/Div) VOUT (100mV/Div) IOUT (100mA/Div) VIN = 3.0V, V OUT = 3.3V VIN = 1.8V, VOUT = 3.3V, IOUT = 100mA CH1 Boost LX1 and Output Voltage Ripple LX1 (2V/Div) Time (1 μs/Div) VOUT (10mV/Div) VIN = 4.2V, VOUT = 3.3V, IOUT = 100mA LX1 (2V/Div) Time (1 μs/Div) VOUT (10mV/Div) CH1 Buck LX1 and Output Voltage Ripple CH1 Buck Efficiency vs. Output Current 100 10 100 1000 Output Current (mA) Efficiency (%) VIN = 3.0V = 3.4V = 3.8V = 4.5V Ch1 Buck VOUT = 2.5V CH1 Boost Efficiency vs. Output Current 100 10 100 1000 Output Current (mA) Efficiency (%) VIN = 3.2V = 2.5V = 2.0V = 1.5V Ch1 Boost V OUT = 3.3V

DS9911-04 August 2007 www.richtek.com VIN = 3.3V, VOUT = 1.8V, IOUT = 300mA CH2 LX2 and Output Voltage Ripple LX2 (2V/Div) Time (1 μs/Div) VOUT (10mV/Div) VIN = 4.2V, VOUT = 2.5V, IOUT = 400mA CH2 LX2 and Output Voltage Ripple LX2 (2V/Div) Time (1 μs/Div) VOUT (10mV/Div) CH2 Buck Efficiency vs. Output Current 100 10 100 1000 Output Current (mA) Efficiency (%) VIN = 2.5V = 3.0V = 3.8V = 4.5V VOUT = 1.8V CH1 Buck Output Voltage vs. Output Current 3.365 3.366 3.367 3.368 3.369 3.370 3.371 3.372 3.373 3.374 3.375 0 100 200 300 400 500 600 700 800 900 Loading Current (mA) Output Voltages (V) VIN = 3.7V, VOUT = 3.3V CH1 Boost Output Voltage vs. Output Current 3.320 3.321 3.322 3.323 3.324 3.325 3.326 3.327 3.328 3.329 3.330 0 100 200 300 400 500 600 700 800 900 Output Current (mA) Output Voltages (V) VIN = 2.4V, VOUT = 3.3V CH1 Boost Output Voltage vs. VDDM Voltage 3.20 3.21 3.22 3.23 3.24 3.25 3.26 3.27 3.28 3.29 3.30 VDDM Voltage (V) Output Voltage (V) VIN = 2.5V, VOUT = 3.3V, IOUT = 250mA

DS9911-04 August 2007www.richtek.com CH2 Load Transient Response Time (1ms/Div) VOUT (20mV/Div) IOUT (200mA/Div) VIN = 4.2V, V OUT = 2.5V CH2 Load Transient Response Time (1ms/Div) VOUT (20mV/Div) IOUT (200mA/Div) VIN = 3.0V, V OUT = 2.5V CH2 Load Transient Response Time (1ms/Div) VOUT (20mV/Div) IOUT (100mA/Div) VIN = 3.3V, V OUT = 1.8V CH2 Output Voltage vs. VDDM Voltage 1.74 1.75 1.76 1.77 1.78 1.79 1.80 1.81 1.82 1.83 1.84 VDDM Voltage (V) Output Voltage (V) VIN = 3.3V, VOUT = 1.8V, IOUT = 250mA CH2 Buck Output Voltage vs. Output Current 1.805 1.806 1.807 1.808 1.809 1.810 1.811 1.812 1.813 1.814 1.815 0 100 200 300 400 500 600 700 800 900 100 Output Current (mA) Output Voltages (V) VIN = 3.7V, VOUT = 1.8V 1000 CH2 Buck Output Voltage vs. Output Current 3.270 3.280 3.290 3.300 3.310 3.320 3.330 3.340 3.350 3.360 3.370 0 100 200 300 400 500 600 700 800 900 100 Output Current (mA) Output Voltages (V) VIN = 3.7V, VOUT = 3.3V 1000

DS9911-04 August 2007 www.richtek.com VIN = 1.8V, VOUT = 5V, IOUT = 350mA CH3 LX3 and Output Voltage Ripple LX3 (2V/Div) Time (1 μs/Div) VOUT (20mV/Div) VIN = 1.8V, VOUT = 3.3V, IOUT = 400mA CH3 LX3 and Output Voltage Ripple LX3 (2V/Div) Time (1 μs/Div) VOUT (20mV/Div) Time (1ms/Div) VOUT (100mV/Div) IOUT (200mA/Div) VIN = 3.0V, V OUT = 3.3V CH3 Load Transient Response CH3 Boost Efficiency vs. Output Current 100 10 100 1000 Output Current (mA) Efficiency (%) VIN = 3.2V = 2.5V = 2.0V = 1.5V VOUT = 3.3V CH3 Boost Efficiency vs. Output Current 100 10 100 1000 Output Current (mA) Efficiency (%) VIN = 4.5V = 3.8V = 3.2V = 2.5V = 2.0V = 1.5V VOUT = 5V CH3 Boost Efficiency vs. Output Current 100 10 100 1000 Output Current (mA) Efficiency (%) VOUT = 3.3V VIN = 3.0V Async = 2.4V Async = 1.5V Async = 3.0V Sync = 2.4V Sync = 1.5V Sync

DS9911-04 August 2007www.richtek.com CH4 Load Transient Response Time (1ms/Div) VOUT (100mV/Div) IOUT (20mA/Div) VIN = 1.8V, V OUT = 12V CH4 Boost Efficiency vs. Output Current 100 1 10 100 Output Current (mA) Efficiency (%) VIN = 4.5V = 3.8V = 3.2V = 2.5V = 2.0V = 1.5V VOUT = 12V CH3 Boost Output Voltage vs. VDDM Voltage 3.20 3.21 3.22 3.23 3.24 3.25 3.26 3.27 3.28 3.29 3.30 VDDM Voltage (V) Output Voltage (V) VIN = 2.5V, VOUT = 3.3V, IOUT = 250mA CH3 Boost Output Voltage vs. VDDM Voltage 4.98 4.99 5.00 5.01 5.02 5.03 5.04 5.05 5.06 5.07 5.08 VDDM Voltage (V) Output Voltage (V) VIN = 2.5V, VOUT = 5.0V, IOUT = 250mA CH3 Boost Output Voltage vs. Output Current 4.975 4.980 4.985 4.990 4.995 5.000 5.005 5.010 5.015 5.020 Output Current (A) Output Voltage (V) VIN = 3.7V, VOUT = 5V VIN = 1.8V, VOUT = 12V, IOUT = 30mA CH4 LX4 and Output Voltage Ripple LX4 (5V/Div) Time (1 μs/Div) VOUT (20mV/Div)

DS9911-04 August 2007 www.richtek.com VIN = 1.8V, VOUT = -8V, IOUT = 50mA CH5 LX5 and Output Voltage Ripple LX5 (5V/Div) Time (1 μs/Div) VOUT (20mV/Div) CH5 Inverting Efficiency vs. Output Current 100 11 0 1 0 0 Output Current (mA) Efficiency (%) VIN = 1.5V = 2.0V = 2.5V = 4.5V = 3.2V = 3.8V VOUT = -8V CH4 Output Voltage vs. VDDM Voltage 15.32 15.33 15.34 15.35 15.36 15.37 15.38 15.39 15.40 15.41 15.42 VDDM Voltage (V) Output Voltage (V) VIN = 2.5V, PVDD5 = 3.3V, IOUT = 30mA CH4 Output Voltage vs. VDDM Voltage 11.78 11.79 11.80 11.81 11.82 11.83 11.84 11.85 11.86 11.87 11.88 VDDM Voltage (V) Output Voltage (V) VIN = 2.5V, PVDD5 = 3.3V, IOUT = 30mA CH5 Load Transient Response Time (1ms/Div) VOUT (100mV/Div) IOUT (20mA/Div) VIN = 1.8V, V OUT = -8V CH4 Boost Output Voltage vs. Output Current 15.730 15.735 15.740 15.745 15.750 15.755 15.760 15.765 15.770 15.775 15.780 0 1 02 03 04 05 06 07 08 09 0 1 0 0 Output Current (mA) Output Voltages (V) VIN = 3.7V, VOUT = 15.5V

DS9911-04 August 2007www.richtek.com VIN = 1.8V, VOUT = 3 x WLED, IOUT = 20mA CH6 LX6 and Output Voltage Ripple LX6 (5V/Div) Time (1 μs/Div) VOUT (20mV/Div) CH6 Efficiency vs. Input Voltage 100 1 . 522 . 533 . 544 . 55 Input Voltage (V) Efficiency (%) IOUT = 20mA CH5 Output Voltage vs. Output Current -8.152 -8.151 -8.150 -8.149 -8.148 -8.147 -8.146 -8.145 -8.144 -8.143 -8.142 Loading Current (mA) Output Voltages (V) VIN = 3.7V, VOUT = -8V CH7 Load Transient Response Time (1ms/Div) VOUT (10mV/Div) IOUT (200mA/Div) VIN = 2.5V, V OUT = 1.8V CH5 Output Voltage vs. VDDM Voltage -8.12 -8.11 -8.10 -8.09 -8.08 -8.07 -8.06 -8.05 -8.04 -8.03 -8.02 VDDM Voltage (V) Output Voltage (V) VIN = 3.0V, PVDD5 = 3.3V, IOUT = 30mA CH5 Output Voltage vs. VDDM Voltage -6.12 -6.11 -6.10 -6.09 -6.08 -6.07 -6.06 -6.05 -6.04 -6.03 -6.02 VDDM Voltage (V) Output Voltage (V) VIN = 3.0V, PVDD5 = 3.3V, IOUT = 30mA

DS9911-04 August 2007 www.richtek.com Feedback Voltage vs. Temperature 0.72 0.76 0.80 0.84 0.88 0.92 0.96 1.00 1.04 - 4 0 - 2 00 2 04 06 08 0 1 0 0 Temperature Feedback Voltage (V) VFB4, VFB6 VFB1, VFB2, VFB3 (°C) CH4 and CH5 Power Sequence Time (2ms/Div) EN4/EN5 (2V/Div) VOUT_Ch4 (5V/Div) VOUT_Ch5 (5V/Div) Start Up, VIN = 2.5V CH1 and CH2 Power Sequence Time (1ms/Div) Start Up, VIN = 2.5V EN1/EN2 (2V/Div) VOUT_Ch1 (2V/Div) VOUT_Ch2 (2V/Div)

DS9911-04 August 2007www.richtek.com Applications Information The RT9911 includes the following six DC/DC converter channels to build a multiple-output power-supply system. CH1 : Selectable step-up or step-down synchronous current mode DC/DC converter with internal power MOSFETs. CH2 : Step-down synchronous current mode DC/DC converter with internal power MOSFETs. CH 3 : Step-up asynchronous c urrent mode DC/DC controller to drive external power MOSFETs. CH4 : Step-up asynchronous voltage mode DC/DC controller. CH5 : Inverting DC/DC voltage mode controller. CH6 : DC/DC voltage mode controller for WLED as well as conventional boost application; provides open LED OVP protection. CH1 : Selectable Step-up or Step-down Converter CH1 is selectable as step-up (SELECT pin = logic high) or step-down (SELECT pin = logic low). Step-up : With internal MOSFETs and synchronous rectifier, the efficiency is up to 95%. The converter always operates at fixed frequency PWM mode and CCM (continuous current mode). Step-down : With internal MOSFETs and synchronous rectifier, the efficiency is up to 95%. The converter always operates at fixed frequency PWM mode and CCM. While the input voltage is close to output voltage, the converter enters low dropout mode. Duty could be as long as 100% to extend battery life. See Figure 3(a) for detailed functional block. CH2 : Step-down DC/DC Converter With internal MOSFETs and synchronous rectifier, the efficiency is up to 95%. The converter always operates at fixed frequency PWM mode and CCM. While the input voltage is close to output voltage, the converter enters low dropout mode. Duty could be as long as 100% to extend battery life. See Figure 3(b) for detailed functional block. CH3 : Step-up DC/DC Controller With external MOSFETs and a synchronous rectifier, the efficiency is up to 97%. The converter always operates at fixed frequency PWM mode and CCM. The threshold of current limit is estimated by R DS(ON) of external NMOS. See Protections for detailed information and detailed functional block in Figure 3(c). CH4, CH6 : Step-up DC/DC Controller CH4 and CH6 are fixed frequency voltage mode PWM controllers. EXT4 and EXT6 pins are designed to drive external NMOS switch. CH6 is optimized for WLED application. CFB6 is current-sensing feedback, and VFB6 provides over voltage protection (WLED open circuit). See Protections for detailed information and detailed functional block in Figure 3(d for CH4 and e for CH6). CH5 : Inverting Controller CH5 is a voltage mode, fixed frequency PWM controller to generate negative output voltage. EXT5 is designed to drive external PMOS switch. To turn off PMOS completely, please note that PVDD5 sh ould not be lower than the source voltage of PMOS. See Figure 3(f) for detailed functional block. Reference Voltage RT9911 provides a precise 1V reference voltage with souring capability 100uA. Connect a 1uF ceramic capacitor from VREF pin to GND. Reference voltage is enabled by connecting EN5 to logic high.

Td1 to Td6 are precise value. Tr1 to Tr6 are approximation. C31 to C36 : Compensation capacitor of CH1 to CH6. Figure 4. Timing Diagram z Please refer to Figure 1 for application Information. z Timing sequence should be controlled by EN pins.

DS9911-04 August 2007 www.richtek.com CH1 Sync-Buck (Select Pin = Low Logic) and CH2 Sync-Buck : CH1 sync-buck (select pin=low logic) and CH2 sync-buck are converters employ current-mode control to simplify the control loop compensation. Th ere is no RHPZ (Right Hand Plan Zero) in the buck topology but there is a high frequency pole f HP >= f OSC / π . The f C (cross over frequency) is chosen sufficient less than fHP. The fixed parameters for CH1 and CH2 buck compensation are as follows: z Transconductance (from FB to COMP), GM = 200us z Current sense transresistance, RCS = 0.3V/A z Feedback voltage, VFB = FB = 0.8V The input parameters for CH1 and CH2 buck compensation are as follows: z R1, the voltage divider resistor in between V OUT and FB. The major steps for getting above results : 2. Find RHPZ(Right Hand Plan Zero) location. 3. Set fC (cross over frequency) sufficiently below RHPZ. For example : fC = RHPZ/6 4. Get 5. Select Rc based on the allowed transient droop. , where dI = transient step, dV FB = TDRP(%) x VFB 6. Get 7. Find ffz, zero and ffp, pole ratio of voltage divider with CF. 8. Get CF by placing ffp on fC and ffz therefore on . 9. Evaluate CP. CP is for canceling the zero from C OUT (ceramic output capacitor). Example : Set R1 = 470kΩ, VIN = 1.8V, VOUT = 3.3V, VFB = 0.8V, IOUT(MAX.) = 0.5A, fOSC = 500kHz, L = 4.7uH, RESR = 5mΩ, and half-load transient droop is 5%. Results: Half-load transient means load from 0.25A to 0.5A transient. So, dI=0.5 − 0.25=0.25A dV FB = TDRP(%) x VFB = 5% x 0.8 = 0.04V. Thus, Choose C F = 150pF which is less than 10pF. So, It can be ignored. ⎛= )V-(V V x R1 R2 FBOUT FB OUT IN OUT(MAX.) OUT LOAD LOAD V V-1 CycleDuty D ,I V R Where,L2 D)-(1 x R )RHPZ(Boost === = π D)-(1 x V V x f2 GM x R R C OUT FB CCS LOAD C CSC FB 1RR = dI x ( ) x (1-D) GM x dV LOAD CC OUT R C x R C = FB OUT V V ffp ffz ratio == ratio f ffz where, R1 x ffz x x 2 1 C C f == π ratio fC 10pF. C if ignore be can C . R R C C PP C ESR OUTP <= Ω=== 150k 0.8-3.3 0.8 470k V-V VR1 R2 FBOUT FB 0.54 V V D)-(1 , 6.6 I V R where66.3kHz, L2 D)-(1 R )RHPZ(Boost OUT IN OUT(MAX) OUT LOAD LOAD ==Ω== == π 11kHz 6 RHPZ fC == 6.8nF. Choose 6.3nF. D)(1 x V V x f2 GM R R C OUT FB C CS LOAD C =−⎟ ⎛= π = 23k dV x GM R x D)-(1 1dI R FB CS C . F22 6.6 6.8n x 23k R C x R C LOAD CC OUT μ=== OUT FB ffp V3 . 3ratio = = = = 4.1ffz V 0.8 OUT ESRP C 22μF x 0.005C x RC = = = 4.8pF ,R 23k 2.68kHz4.1 11k ratio fff where126pF,R1ff2 CZ Z F === =××= π

DS9911-04 August 2007www.richtek.com z VIN, input voltage. z VOUT, desired output voltage z IOUT(MAX.), maximum output load z fOSC, operating frequency z L, inductance z RESR, ESR (Equivalent Series Resistance) of C OUT (ceramic output capacitor) z TDRP(%), Transient droop. The results we will get for CH1 boost compensation are as follows: z R2, the voltage divider resistor in between FB and ground. z CF, feedforward capacitor in parallel with R1. z RC, compensation resistor on COMP pin. z CC, compensation capacitor in series with R C and connect to ground z CP, connect in between COMP pin and ground. (Can be ignored if CP < 10pF) z COUT, output capacitance. This compensation is based on ceramic output capacitor. F.10 Choose F.10.8 6.3 3.9nF x 10k R C x R C LOAD CC OUT μμ=== The major steps for getting above results : 2. Set fc (cross over frequency) sufficiently below fOSC. For example : 6. Find ffz, zero and ffp, pole ratio of voltage divider with C 7. Get CF by placing ffp on fC and ffz therefore on . 8. Evaluate CP. CP is for canceling the zero from C OUT (ceramic output capacitor). Example : Set R1 = 470kΩ, VIN = 3V, VOUT = 1.8V, VFB = 0.8V, IOUT(MAX.) = 0.5A, fOSC = 500kHz, L = 4.7uH, RESR = 5mΩ, and half-load transient droop is 5%. Results : Choose 4.7nF. Half-load transient means load from 0.25A to 0.5A transient. So, dI = 0.5 − 0.25=0.25A dVFB = TDRP(%) x VFB = 5% x 0.8 = 0.04V. Thus, Choose C F = 22pF which is less than 10pF. So, It can be ignored. FBOUT FB V-V VR1 R2 = CSC FB FB DRP FB dI x RR = , where dI = transient step,GM x dV dV = T (%) x V LOAD CC OUT R C x R C Get = FB OUT V V ffz ffp ratio == ratio fC 10pF. C if ignore be can C . R R x C C PP C ESROUT P <= Ω=== 376k 0.8-1.8 0.8 x 470k V-V V x R1 R2 FBOUT FB .10k choose , 9.4k dV x GM R dI R FB CS C ΩΩ== 2.25 0.8 1.8 V V ffz ffp ratio FB OUT ==== , 5pF 10k 0.005 x 10 R R x C C C ESROUT P === μ .ratio fff where,R1ff2 1C CZ Z F =××= π 22.2kHz2.25 50k ratio fff where15.2pF,R1ff2 CZ Z F === =××= π f f HP C = OUT FB CCS LOAD C V V x f2 GM x R R C π= 40kHz 4 f 4 f f OSCHP C === π Ω== 3.6 I V R where4.25nF, V V x f2 GM x R R C OUT(MAX.) OUT LOAD OUT FB CCS LOAD C π

DS9911-04 August 2007 www.richtek.com CH3 Syn Boost Controller with External MOSFET : CH3 boost controller driving external logic level MOSFET employs current-mode control to simplify the control loop compensation. There is a RHPZ (Right Hand Plan Zero) appeared in the loop-gain frequency response when a boost converter operates with continuous inductor current (typically the case), we also call it works in CCM (Continuous Current Mode). For stability, cross over frequency (f C), unity gain frequency, must lower than this RHPZ frequency. The fixed parameters for CH3 boost compensation are as follows : z Transconductance (from FB to COMP), GM = 200us z Feedback voltage, VFB = FB = 0.8V The input parameters for boost compensation are as follows : z RDS(ON), the NMOSFET R DS(ON), which is use to find transresistance, RCS. z R1, the voltage divider resistor in between V OUT and FB. z VIN, input voltage. z VOUT, desired output voltage z IOUT(MAX.), maximum output load z FOSC, operating frequency z L, inductance z RESR, ESR (Equivalent Series Resistance) of C OUT (ceramic output capacitor) z TDRP(%), Transient droop. The results we will get for boost compensation are as follows : z RCS, the transresistance of current sense. z R2, the voltage divider resistor in between FB and ground. z CF, feedforward capacitor in parallel with R1. z RC, compensation resistor on COMP pin. z CC, compensation capacitor in series with R C and connect to ground z CP, connect in between COMP pin and ground. (Can be ignored if CP < 10pF) z COUT, output capacitance. This compensation is based on ceramic output capacitor. The major steps for getting above results : 1. R CS = 2 x RDS(ON) The rest of the steps are the same as sync-boost. CH4 Asyn-Boost Controller with External MOSFET CH4 is an asyn-boost controller driving external logic level N type MOSFET, which employs voltage mode control to regulate the output voltage. Compensation depends on designing the loading range working in discontinuous or continuous inductor current mode. (DCM or CCM). Asyn-Boost in DCM : We call it DCM because inductor current falls to zero on each switch cycle. The benefit of designing in DCM is the simple loop compensation, which has no RHPZ (Right Hand Plan Zero) and conjugate double pole in the frequency domain to worry about, but has a single load pole instead. However, the output ripple and efficiency are worse than in CCM (Continuous Inductor Current). If the loading is around tens of mA, it is not bad to design in DCM with less impact on the output ripple and efficiency, but gain more easy to stabilize the control loop. The fixed parameters for CH4 asyn-boost in DCM compensation are as follows: z Transconductance (from FB to COMP), GM = 200us. z Internal voltage ramp to decide duty cycle, VP = 1V. z Feedback voltage, VFB = FB = 1V Figure 9 VOUT IOUT RESR CF COUT R2RC CC CP FB COMP GM

DS9911-04 August 2007www.richtek.com Asyn-boost in CCM : We call it CCM because inductor current is always continuous in operation. The benefit of designing in CCM is lower V OUT and inductor current ripple and higher efficiency from the lower coil loss, but with the expense of larger inductor size and cost and the control loop comes with a RHPZ (Right Hand Plan Zero) and a conjugate double pole in the frequency domain to worry about. The fixed parameters for CH4 asyn-boost in CCM compensation are as follows : z Transconductance (from FB to COMP), GM = 200us z Internal voltage ramp to decide duty cycle, VP = 1V z Feedback voltage, VFB = FB = 1V The input parameters for CH4 asyn-boost in CCM compensation are as follows: z R1, the voltage divider resistor in between V OUT and FB. z VIN, input voltage. z VOUT, desired output voltage z IOUT(MAX.), maximum output load z IOUT(MIN.), minimum output laod z fOSC, operating frequency The input parameters for CH4 asyn-boost in DCM compensation are as follows : z R1, the voltage divider resistor in between V OUT and FB. z VIN, input voltage. z VOUT, desired output voltage z IOUT(MAX.), maximum output load z fOSC, operating frequency z L, inductance z COUT, output capacitance. This compensation is based on ceramic output capacitor. z RESR, ESR (Equivalent Series Resistance) of C OUT (ceramic output capacitor) The results we will get for CH4 asyn-boost in DCM compensation are as follows : z R2, the voltage divider resistor in between FB and ground. z CF, feedforward capacitor in parallel with R1. z RC, compensation resistor on COMP pin. z CC, compensation capacitor in series with R C and connect to ground z CP, connect in between COMP pin and ground. (Can be ignored if CP < 10pF) The major steps for getting above results : 2. Select suitable inductor to ensure I OUT(MIN.) works in DCM, which is let inductor current falls to zero on each switch cycle. 3. Set f C sufficient below fOSC. For example: which is duty to VOUT transfer function. 7. Find ffz, zero and ffp, pole ratio of voltage divider with CF. 8. Get CF by placing ffp on fC and ffz therefore on . 9. Evaluate CP. CP is for canceling the zero from C OUT (ceramic output capacitor). FBOUT FB V-V V x R1 R2 = OSCOUT(MAX.) IN f x I x 2 D)-(1 x D x V L < lower or 10 f f OSC C = . I V R , V V M where , C x R x 1)-(M x 2 1-M x 2 f : pole load the Find OUT(MAX.) OUT LOAD IN OUT OUTLOAD LP = π , 1-M x 2 1-M x D V x 2 G where, G x GM x Vf f R Get OUT dod dod P LP C C == OUT IN V V-1 cycleduty D == pole. load zero comp lettingby R R x C C Get C LOAD OUTC FB OUT V V ffz ffp ratio == ratio fC 10pF. C if ignore be can C . R R x C C PP C ESR OUTP <= .ratio fff where,R1ff2 1C CZ Z F =××= π

DS9911-04 August 2007 www.richtek.com CH5 Asyn-Inverter Controller with External MOSFET CH5 is an asyn-inverter controller driving external logic level P type MOSFET, which employs voltage mode control to regulate the output voltage. Compensation depends on designing the loading range working in discontinuous or continuous inductor current mode. (DCM or CCM). Asyn-Inverter in DCM : We call it DCM because inductor current falls to zero on each switch cycle. The benefit of designing in DCM is the simple loop compensation, which has no RHPZ (Right Hand Plan Zero) and conjugate double pole in the frequency domain to worry about, but has a single load pole instead. However, the output ripple and efficiency are worse than in CCM (Continuous Inductor Current). If the loading is around tens of mA, it is not bad to design in DCM with less impact on the output ripple and efficiency, but gain more easy to stabilize the control loop. The fixed parameters for CH5 asyn-inverter in DCM compensation are as follows: z Transconductance (from FB to COMP), GM = 200us z Internal voltage ramp to decide duty cycle, VP = 1V z Feedback voltage, VFB = FB = 0V z Reference voltage, VREF = 1V Figure 10 z L, inductance z COUT, output capacitance. This compensation is based on ceramic output capacitor. z RESR, ESR (Equivalent Series Resistance) of C OUT (ceramic output capacitor) The results we will get for CH4 asyn-boost in CCM compensation are as follows: z R2, the voltage divider resistor in between FB and ground. z CF, feedforward capacitor in parallel with R1. z RC, compensation resistor on COMP pin. z CC, compensation capacitor in series with R C and connect to ground z CP, connect in between COMP pin and ground. (Can be ignored if CP < 10pF) The major steps for getting above results : 2. Select suitable inductor to ensure I OUT(MIN.) works in CCM, 3. Find RHPZ(Right Hand Plan Zero) location. 4. Set fC (cross over frequency) sufficiently below RHPZ. For example : which is duty to V OUT transfer function. 7. Find which is the conjugate double pole from LC filter. FBOUT FB V-V V x R1 R2 = OSCOUT(MIN.) IN f x I x 2 D)-(1 x D x V L > OUT IN OUT(MAX) OUT LOAD LOAD V V-1 cycleduty D , I V R where, L2 D)-(1 R )RHPZ(Boost === = π lower. r 6 RHPZ fC o= . I V R , V V M where , C x R x 1)-(M x 2 1-M x 2 f : pole load the Find OUT(MAX.) OUT LOAD IN OUT OUTLOAD LP = π D)-(1 V G where, G x GM x Vf f R Get 2 IN doc doc P LP C C == . V V-1 cycleduty D OUT IN (LC) x 2 D-1 f 2cdp π pole. double the of one cancel to R x f x 2 1 C Ccdp C 9. Find Cf by placing its zero on f cdp to cancel another double pole. 10.Evaluate CP. CP is for canceling the zero from C OUT (ceramic output capacitor). 10pF. C if ignore be can C . R R x C C PP C ESR OUTP <= .R1f2 cdp F ××= π VOUT IOUT RESR CF COUT R2RC CC CP FB COMP GM 4.7uF VREF = 1V 20k

DS9911-04 August 2007www.richtek.com The input parameters for CH5 asyn-inverter in DCM compensation are as follows : z R1, the voltage divider resistor in between V OUT and FB. z VIN, input voltage. z VOUT, desired output voltage z IOUT(MAX.), maximum output load z fOSC, operating frequency z L, inductance z COUT, output capacitance. This compensation is based on ceramic output capacitor. z RESR, ESR (Equivalent Series Resistance) of C OUT (ceramic output capacitor) The results we will get for CH5 asyn-inverter in DCM compensation are as follows : z R2, the voltage divider resistor in between FB and VREF. z CF, feedforward capacitor in parallel with R1. z RC, compensation resistor on COMP pin. z CC, compensation capacitor in series with R C and connect to ground z CP, connect in between COMP pin and ground. (Can be ignored if CP < 10pF) Asyn-Inverter in CCM : We call it CCM because inductor current is always continuous in operation. The benefit of designing in CCM is lower V OUT and inductor current ripple and higher efficiency from the lower coil loss, but with the expense of larger inductor size and cost and the control loop comes with a RHPZ (Right Hand Plan Zero) and a conjugate double pole in the frequency domain to worry about. The fixed parameters for CH5 asyn-inverter in CCM compensation are as follows : z Transconductance (from FB to COMP), GM = 200us z Internal voltage ramp to decide duty cycle, VP = 1V z Feedback voltage, VFB = FB = 0V z Reference voltage, VREF = 1V The input parameters for CH5 asyn-inverter in CCM compensation are as follows : z R1, the voltage divider resistor in between V OUT and FB. z VIN, input voltage. z VOUT, desired output voltage z IOUT(MAX.), maximum output load The major steps for getting above results : 2. Select suitable inductor to ensure I OUT(MIN.) works in DCM, which is let inductor current falls to zero on each switch cycle. 3. Set f C sufficient below fOSC For example: which is duty to Vout transfer function. 7. Find ffz, zero and ffp, pole ratio of voltage divider with CF. 8. Get CF by placing ffp on fC and ffz therefore on . 9. Evaluate CP. CP is for canceling the zero from C OUT (ceramic output capacitor). Ω== =Ω=−= 125k(-8)-0 0-1 x 1M R2 then (-8)V Vand 1M R1 If . VV V-V x R1 R2 OUT OUTFB FBREF OSCOUT(MAX.) IN f x I x 2 D)-(1 x V L < lower or 10 f f OSC C = . I V R where , C x R x 2 2 f : pole load the Find OUT(MAX.) OUT LOAD OUTLOAD LP = π , D V G where, G x GM x Vf f R Get OUT dod dod P LP C C == . )abs(V V )abs(V cycleduty D OUTIN OUT +== pole. load zero comp lettingby R R x C C Get C LOAD OUTC REF REFOUT V V)abs(V ffz ffp ratio +== ratio fC 10pF. C if ignore be can C . R R x C C PP C ESR OUTP <= .ratio fff where,R1ff2 1C CZ Z F =××= π

DS9911-04 August 2007 www.richtek.com z IOUT(MIN.), minimum output laod z fOSC, operating frequency z L, inductance z COUT, output capacitance. This compensation is based on ceramic output capacitor. z RESR, ESR (Equivalent Series Resistance) of C OUT (ceramic output capacitor) The results we will get for CH5 asyn-inverter in CCM compensation are as follows : z R2, the voltage divider resistor in between FB and VREF. z CF, feedforward capacitor in parallel with R1. z RC, compensation resistor on COMP pin. z CC, compensation capacitor in series with R C and connect to ground z CP, connect in between COMP pin and ground. (Can be ignored if CP < 10pF) The major steps for getting above results : 2. Select suitable inductor to ensure I OUT(MIN.) works in CCM, 3. Find RHPZ(Right Hand Plan Zero) location. 4. Set fC (cross over frequency) sufficiently below RHPZ. For example: which is duty to VOUT transfer function. 7. Find which is the conjugate double pole from LC filter. 9. Find C f by placing its zero on fcdp to cancel another double pole. 10.Evaluate CP. CP is for canceling the zero from C OUT (ceramic output capacitor). Ω== =Ω=−= 125k(-8)-0 0-1 x 1M R2 then (-8)V Vand 1M R1 If . VV V-V x R1 R2 OUT OUTFB FBREF OSCOUT(MIN.) IN f x I x 2 D)-(1 x V L < )abs(V V )abs(V cycleduty D , I V R where, L2 D D)-(1 R )RHPZ(Boost OUTIN OUT OUT(MAX) OUT LOAD LOAD +=== = π lower or 6 RHPZ fC = . I )abs(V R where , C x R x 2 2 f : pole load the Find OUT(MAX.) OUT LOAD OUTLOAD LP = π D)-(1 V G where, G x GM x Vf f R Get 2 IN doc doc P LP C C == OUT OUT IN OUT abs(V )D = duty cycle = VV + a b s ( V ) (LC) x 2 D-1 f 2cdp π pole. double the of one cancel to R x f x 2 1 C Ccdp C 10pF. C if ignore be can C . R R x C C PP C ESR OUTP <= .R1f2 cdp F ××= π PCB Layout Considerations z The feedback netwok should be very close to the FB pin. z The compensation network should be very close to the COMP pin and avoid through VIA. z For CH3 current sense, CS should be close to the drain site of external NMOS. z Keep high current path as short as possible.

DS9911-04 August 2007www.richtek.com Richtek Technology Corporation Headquarter 5F, No. 20, Taiyuen Street, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5526789 Fax: (8863)5526611 Richtek Technology Corporation Taipei Office (Marketing) 8F, No. 137, Lane 235, Paochiao Road, Hsintien City Taipei County, Taiwan, R.O.C. Tel: (8862)89191466 Fax: (8862)89191465 Email: marketing@richtek.com Outline Dimension Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.800 1.000 0.031 0.039 A1 0.000 0.050 0.000 0.002 A3 0.175 0.250 0.007 0.010 b 0.180 0.300 0.007 0.012 D 5.950 6.050 0.234 0.238 D2 4.000 4.750 0.157 0.187 E 5.950 6.050 0.234 0.238 E2 4.000 4.750 0.157 0.187 e 0.500 0.020 L 0.350 0.450 0.014 0.018 V-Type 40L QFN 6x6 Package D E L b A e SEE DETAIL A Note : The configuration of the Pin #1 identifier is optional, but must be located within the zone indicated. DETAIL A Pin #1 ID and Tie Bar Mark Options 2 2