RT9701

RT9701 RICHTEK | Alldatasheet

Document overview

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Technical content

Features

z 100mΩΩΩΩ Typ. High-Side NMOSFET (SOT- 25) z Guaranteed 1.1A Continuous Current z 1.5A Current Limit z Small SOT- 25 Package Minimizes Board Space z Soft Start z Thermal Protection z Low 23µµµµA Supply Current z Wide Input Voltage Range: 2.2V ~ 6V z UL Approved - #E219878 Pin Configurations Part Number Pin Configurations RT9701CBL (Plastic SOT-25) TOP VIEW 1. VOUT 2. GND 3. VIN 4. VIN 5. VOUT RT9701CB (Plastic SOT-25) TOP VIEW 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT Typical Application Circuit Operating temperature range C: Commercial standard Package type BL : SOT-25 B : SOT-25 321 321 VOUT RT9701 CBL VOUT *COUT 470 µF VINVIN CIN 1 µF GND VOUTVIN * 470µF, Low ESR Electrolytic

www.richtek-ic.com.tw DS9701-05 October 2001 Pin Description Pin Name Pin Function VIN Power Input VOUT Output Voltage GND Ground CE Chip Enable Test Circuits Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 2 is performed by charging an external tank of bulk capacitor to the input then applying this voltage to the input of the unit. All typical operating characteristics curves showed are referred to Test Circuit 1, unless specified to Test Circuit 2 or Test Circuit 3. VOUT RT9701 CBL VOUT CL VIN VIN CIN GND VOUTVIN RL IL IOUT + + VOUT RT9701 CBL VOUT CL VIN VIN CIN GND VOUTVIN RL+ + Switch Off VIN-SW VOUT RT9701 CB VOUT CL VIN VIN CIN GND VOUTCE RL IL IOUT + +VCE Off On

DS9701-05 October 2001 www.richtek-ic.com.tw Function Block Diagram Absolute Maximum Ratings z Supply Voltage 7V z Chip Enable -0.3V ~ 7V z Power Dissipation, PD @ TA = 25°C SOT-25 0.25W z Operating Junction Temperature Range -20 °C ~ 100°C z Storage Temperature Range -65 °C ~ 150°C z Package Thermal Resistance SOT-25, θJA 250°C /W z VOUT ESD Level HBM (Human Body Mode) 8KV MM (Machine Mode) 800V Bias Charge Pump Oscillator Current Limit Control Thermal Detection VIN VOUT GND RS NMOSFET CE (VIN) (VOUT)

www.richtek-ic.com.tw DS9701-05 October 2001

Electrical Characteristics

(VIN = 5V, CIN = COUT = 1µF, TA = 25°C, unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units Input Voltage Range VIN 2.2 -- 6 V RT9701CBL I L = 1A -- 100 130 Output NMOFET RDS(ON) RT9701CB RDS(ON) IL = 1A -- 105 135 mΩ VIN = 3V -- 19 40 Supply Current VIN = 5V -- 23 45 µA Output Turn-On Rising Time TR RL = 10Ω, 90% Settling -- 400 -- µS Current Limit Threshold ILIMIT RL = 2Ω 1.1 1.5 2 A Short-circuit Fold Back Current IOS VOUT = 0V, measured prior to thermal shutdown -- 1.0 -- A CE Input High Threshold RT9701CB 2.0 -- -- V CE Input Low Threshold RT9701CB -- -- 0.8 V Shutdown Supply Current RT9701CB IOFF CE = “0” -- 0.1 1 µA Output Leakage Current RT9701CB ILEAKAGE CE = “0”, VOUT = 0V -- 0.5 10 µA VIN Under Voltage Lockout UVLO 1.3 1.8 -- V VIN Under Voltage Hysteresis -- 100 -- mV Thermal Limit TSD -- 130 -- °C Thermal Limit Hysteresis ∆TSD -- 20 -- °C

DS9701-05 October 2001 www.richtek-ic.com.tw Typical Operating Charateristics Supply Current vs. Temp. -40 -20 0 20 40 60 80 100 120 Temperature (ºC) Quiessent Current ( µ A) VIN = 5V µ Current Limit vs. Temp. 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 2.20 -40 -20 0 20 40 60 80 100 120 Temperature ( C) Current Limit (A) VIN = 5V °C) On-Resistance vs. Temp. 100 120 140 160 - 4 0 - 2 0 0 2 04 06 08 0 1 0 0 1 2 0 Temperature ( C) On-Resistance (m ) RT9701CBL RT9701CB VIN = 5V °C) Supply Current vs. Voltage Voltage (V) Quiescent Current (µ A) Ta = 25° CTA µ VIN Voltage (V) On-Resistance vs. Voltage 100 120 140 160 Voltage (V) On-Resistance (mOhm) Ta = 25° C RT9701CBL TA = 25°C RT9701CBL VIN Voltage (V) Current Limit vs. Voltage 0.00 0.23 0.45 0.68 0.90 1.13 1.35 1.58 1.80 Voltage (V) Current Limit (A) TA = 25°C VIN Voltage (V)

www.richtek-ic.com.tw DS9701-05 October 2001 Short Circuit Current vs. Temp. 500 600 700 800 900 1000 1100 1200 1300 1400 -40 -20 0 20 40 60 80 100 120 Temperature ( C) Short Circuit Current (mA) VIN = 5V °C) Short Circuit Current vs. Voltage 200 450 700 950 1200 1450 1700 1950 Voltage (V) Short Circuit Current (mA) Ta = 25° CTA VIN Voltage (V) CE Threshold vs. Voltage 0.0 0.4 0.8 1.2 1.6 2.0 2.4 Voltage (V) CE Threshold (V) Rising Falling TA = 25°C VIN Voltage (V) *Test Circuit 3 CE Threshold vs. Temp. 0.0 0.4 0.8 1.2 1.6 2.0 2.4 -40 -20 0 20 40 60 80 100 120 Temperature (ºC) CE Threshold (V) Rising Falling VIN = 5V *Test Circuit 3 Turn On Rising Time vs. Temp. 180 270 360 450 540 630 720 -40 -20 0 20 40 60 80 100 120 Temperature ( Turn-On Rising Time ( µ RL = 30Ω CL = 1µ F Ceramic VIN = 5V °C) µS) *Test Circuit 3 Turn Off Falling Time vs. Temp. 100 120 140 -40 -20 0 20 40 60 80 100 120 Temperature (° C) Turn-Off Falling Time (µ VIN = 5V RL = 30Ω CL = 1µ F Ceramic µ *Test Circuit 3

DS9701-05 October 2001 www.richtek-ic.com.tw UVLO Threshold vs. Temp. 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 -40 -20 0 20 40 60 80 100 120 Temperature ( UVLO Threshold (V) VIN = 5V °C) Inrush Current Response 100µS/Div VIN = 5V, RL = 1 ohm CL = 100µF CL = 1µF CL = 33µF IOUT =1A/Div Time (100µS/Div) RL = 1Ω, VIN = 5VIL = 1A/Div T TT 1 >1 >1 >1 > 2 >2 >2 >2 > Turn-On Response Time (100µS/Div) RL = 30 Ω, CL = 1µF CH1: VCE : 5V/Div CH2: VOUT : 1V/Div CH1 CH2 *Test Circuit 3 Turn-Off Response Time (50µS/Div) TT TT T 1 >1 >1 >1 > 2 >2 >2 >2 > 3 >3 >3 >3 > RL = 30 Ω, CL = 1µF CH2: IOUT : 100mA/Div; CH3: VOUT : 2V/Div CH1 CH2 CH3 CH1: VCE : 5V/Div *Test Circuit 3 Shutdown Supply Current vs. Temp. 0.0 0.2 0.3 0.5 0.6 0.8 0.9 -40 -20 0 20 40 60 80 100 120 Temperature ( Turn-Off Supply Current (µ VIN = 5V °C) µ *Test Circuit 3 °C) Turn-Off Leakage Current vs. Temp. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -40 -20 0 20 40 60 80 100 120 Temperature ( Turn-Off Leakage Current (µ A) VIN = 5V µ *Test Circuit 3

www.richtek-ic.com.tw DS9701-05 October 2001 T TT 1 >1 >1 >1 > 2 >2 >2 >2 > Time (500µS/Div) CH1: VIN : 1V/Div CH2: VOUT : 1V/Div RL = 30 Ω, CL = 1µF UVLO at Rising CH1 CH2 Time (10mS/Div) UVLO at Falling T TT 1 >1 >1 >1 > 2 >2 >2 >2 > RL = 30 Ω, CL = 1µF CH1: VIN : 1V/Div CH2: VOUT : 1V/Div CH1 CH2 *Test Circuit 2 T TT 1 >1 >1 >1 > 2 >2 >2 >2 > Inrush Short Circuit Response 25µS/Div CH1 : VIN : 2V/Div CH2 : IL : 10A/Div IPEAK : depend on ESR & ESL CH1 CH2 C IN = 1µF CL = 1000µF VDROP =1.2V, depend on CIN ESR T TT 1 >1 >1 >1 > 2 >2 >2 >2 > Soft-start Short Circuit Response 50µS/Div CH1 : VIN : 2V/Div CH2 : IOUT : 1A/Div CIN = 1µF CH1 CH2 Ramped Load Response 1mS/Div 1 >1 >1 >1 > 2 >2 >2 >2 > VIN = 5V, CL = 1µF CH2: IOUT : 500mA/Div VOUT = 5V VOUT = 4.6V Current Limit Threshold CH1 CH2 Current Limit Response 5µS/Div T TT 1 >1 >1 >1 > 2 >2 >2 >2 > VIN = 5V, CL = 0.1µF RL = 1 ohm CH2: ILOAD : 1A/Div Loading triggerCH1 CH2 ΩIOUT : 1A/Div 1.1A 4.9V

DS9701-05 October 2001 www.richtek-ic.com.tw Functional Description The RT9701 is a high-side single N-channel switch with active-high enable input. Input and Output VIN (input) is the power supply connection to the circuitry and the drain of the output MOSFET. VOUT (output) is the source of the output MOSFET. In a typical circuit, current flows through the switch from VIN to VOUT toward the load. Both VOUT pins must be short on the board and connected to the load and so do both VIN pins but connected to the power source. Thermal Shutdown Thermal shutdown shuts off the output MOSFET if the die temperature exceeds 130°C and 20°C of hysteresis forces the switch turning off until the die temperature drops to 110°C. Soft Start In order to eliminate the upstream voltage droop caused by the large inrush current during hot-plug events, the “soft-start” feature effectively isolates power supplies from such highly capacitive loads. Under-voltage Lockout UVLO prevents the MOSFET switch from turning on until input voltage exceeds 1.8V (typical). If input voltage drops below 1.8V (typical), UVLO shuts off the MOSFET switch. Current Limiting and Short Protection The current limit circuit is designed to protect the system supply, the MOSFET switch and the load from damage caused by excessive currents. The current limit threshold is set internally to allow a minimum of 1.1A through the MOSFET but limits the output current to approximately 1.5A typical. When the output is short to ground, it will limit to a constant current 1A until thermal shutdown or short condition removed. T TT 1 >1 >1 >1 > 2 >2 >2 >2 > Thermal Shut Down Response 50mS/Div CH1: VCE : 5V/Div CH3: IOUT@RL1ohm : 500mA/Div CH2: IOUT@short : 500mA/Div VIN = 5V Thermal Shut Down CH1 CH2 CH3 1A/Div 1A/Div Time (50mS/Div) Ω : 1A/Div

www.richtek-ic.com.tw DS9701-05 October 2001 Applications Information Filtering To limit the input voltage drop during hot-plug events, connect a 1µF ceramic capacitor from VIN to GND. However, higher capacitor values will further reduce the voltage drop at the input. Connect a sufficient capacitor from VOUT to GND. This capacitor helps to prevent inductive parasitics from pulling VOUT negative during turn-off or EMI damage to other components during the hot- detachment. It is also necessary for meeting the USB specification during hot plug-in operation. If RT9701 is implanted in device end application, minimum 1 µF capacitor from VOUT to GND is recommended and higher capacitor values are also preferred. In choosing these capacitors, special attention must be paid to the Effective Series Resistance, ESR, of the capacitors to minimize the IR drop across the capacitor’s ESR. A lower ESR on this capacitor can get a lower IR drop during the operation. Ferrite beads in series with all power and ground lines are recommended to eliminate or significantly reduce EMI. In selecting a ferrite bead, the DC resistance of the wire used must be kept to a minimum to reduce the voltage drop. Reverse current preventing The output MOSFET and driver circuitry are also designed to allow the MOSFET source to be externally forced to a higher voltage than the drain (VOUT > VIN ≥ 0). To prevent reverse current from such condition, disable the switch (RT9701CB) or connect VIN to a fixed voltage under 1.3V. Layout and Thermal Dissipation z Place the switch as close to the USB connector as possible. Keep all traces as short as possible to reduce the effect of undesirable parasitic inductance. z Place the output capacitor and ferrite beads as close to the USB connector as possible. z If ferrite beads are used, use wires with minimum resistance and large solder pads to minimize connection resistance. z If the package is with dual VOUT or VIN pins, short both the same function pins as Fig.1 or Fig.2 to reduce the internal turn-on resistance. If the output power will be delivered to two individual ports, it is specially necessary to short both VOUT pin at the switch output side in order to protect the switch when each port are plug-in separately. z Under normal operating conditions, the package can dissipate the channel heat away. Wide power- bus planes connected to VIN and VOUT and a ground plane in contact with the device will help dissipate additional heat. Fig. 1 High Side Power Switch CIN = 1µF, COUT = 470µF (Low ESR) on M/B CIN = 1µF, COUT = 330µF (Low ESR) on Notebook CIN = 10µF, COUT = 1µF on USB device VOUT2 RT9701CBL VOUT COUT VINVIN CIN 1µF GND VOUTVIN VOUT1 COUT Fig. 2 High Side Power Switch with Chip Enable Control VOUT1 RT9701CB VOUT COUT VINVIN CIN GND OFF ON CE VCE VOUT VOUT2 COUT

DS9701-05 October 2001 www.richtek-ic.com.tw

Package Information

Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.889 1.295 0.035 0.051 A1 0.000 0.152 0.000 0.006 B 1.397 1.803 0.055 0.071 b 0.356 0.559 0.014 0.022 C 2.591 2.997 0.102 0.118 D 2.692 3.099 0.106 0.122 e 0.838 1.041 0.033 0.041 H 0.102 0.254 0.004 0.010 L 0.356 0.610 0.014 0.024 SOT- 25 Surface Mount Package b BC D L H A1e A

www.richtek-ic.com.tw DS9701-05 October 2001 RICHTEK TECHNOLOGY CORP. Headquarter 6F, No. 35, Hsintai Road, Chupei City Hsinchu, Taiwan, R.O.C. Tel: (8863)5510047 Fax: (8863)5537749 RICHTEK TECHNOLOGY CORP. Taipei Office (Marketing) 8F-1, No. 137, Lane 235, Paochiao Road, Hsintien City Taipei County, Taipei, R.O.C. Tel: (8862)89191466 Fax: (8862)89191465 Email: marketing@richtek-ic.com.tw