RT2N62M ISAHAYA | Alldatasheet

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Technical content

Silicon NPN Epitaxial Type

DESCRIPTION

RT2N62M is a composite transistor with built-in bias resistor FEATURE

  • Built-in bias resistor ( R1=2..2 KΩ)
  • Mini package for easy mounting APPLICATION muting circuit、switching circuit O U T L I N E D R A W I N G U n i t : m m MARKING N ２６N ２６ MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2） Symbol Parameter Ratings Unit VCBO Collector to Base voltage 40 V VEBO Emitter to Base voltage 40 V VCEO Collector to Emitter voltage 20 V I C Collector current 400 mA PC Collector dissipation（Total Ta=25℃） 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ TERMINAL CONNECTOR ①：BASE１ ②：EMITTER（COMMON） ③：BASE２ ④：COLLECTOR２ ⑤：COLLECTOR１ JEITA：－ JEDEC：－ RTr2RTr1 ① ② ③ 0～0.1 0.65 0.9 1.25 2.1 0.65 0.65 2.0 0.2 0.13 ① ② ③ ISAHAYA ELECTRONICS CORPORATION

Silicon NPN Epitaxial Type TYPICAL CHARACTERISTICS (Tr1、Tr2) Electrical characteristics（Ta=25℃） Limits Symbol Parameter Test conditions Min Typ Max Unit VCBO Collector-base breakdown voltage Ｉ C=50μA , IE=0mA 40 V VEBO Emitter-base breakdown voltage I E=50μA , C=0mA 40 V VCEO Collector-emitter breakdown voltage I C=1mA , RBE=∞ 20 V ICBO Collector cutoff current V CB=40V , IE=0mA 0.5 μA IEBO Emitter cutoff current V EB=40V , IC=0mA 0.5 μA ｈＦＥ DC current transfer ratio V CE=5V , IC=-10mA 820 2500 - VCE(sat) Collector-emitte r saturation voltage I C=10mA , IB=0.5mA 10 mV R1 Input resistance - 1.54 2.2 2.86 KΩ fT Transition frequency V CE=10V, I E=-10mA, f=100MHz 40 MHz Ron Output On-resistance V I=5V, f=1MHz 0.70 Ω ISAHAYA ELECTRONICS CORPORATION INPUT ON VOLTAGE VS. COLLECTOR CURRENT 0.1 100 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) INPUT ON VOLTAGE VI(ON) (V) Ta=25℃ VCE=0.2V COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 100 1000 00 . 2 0 . 4 0 . 6 0 . 81 INPUT OFF VOLTAGE VI(OFF) (V) COLLECTOR CURRENT IC (μA) Ta=25℃ VCE=5V

Silicon NPN Epitaxial Type ISAHAYA ELECTRONICS CORPORATION DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 100 1000 10000 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) DC FORWARD CURRENT GAIN hFE Ta=25℃ VCE=5V DC REVERSE CURRENT GAIN VS. COLLECTOR CURRENT 100 1000 10000 0.1 1 10 100 1000 COLLECTOR CURRENT IC (mA) DC REVERSE CURRENT GAIN hFER Ta=25℃ VEC=5V COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT 0.1 100 1000 0.1 1 10 100 1000 collector current IC (mA) COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) (mV) Ta=25℃ IC/IB=20 ON RESISTANCE VS. INPUT VOLTAGE 0.1 100 0.1 1 10 100 INPUT VOLTAGE VI (V) ON RESISTANCE Ron (Ω) Ta=25℃

Marketing division, Marketing planning department 6 -41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs!

  • ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility th at trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as ( 1) placement of substitutive, auxiliary, (2) use of non-farmable material or ( 3) prevention against any malfunction or mishap. Notes regarding these materials
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