RT8H012C ISAHAYA | Alldatasheet
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Technical content
Multi-Function Transistor RT8g012b Bipolar voltage detector
DESCRIPTION
@RT8H012C is a NPN transistor, a PNP transistor, and the compound transistor constituted by resistance. A circuit designed for detecting input voltage and resetting system. FEATURE @The miniaturization of a set and high-density mounting are possible. @Wide supply voltage range. i2V\36Vj @A detection voltage setup is possible by external resistance. @A delay time setup is possible by external capacity. @"L" reset output of open collector. APPLICATION Reset of logic circuit. Over voltage protection circuit. BLOCK DIAGRAM Notes@F The external resistance for an output capability setup needs to be connected for RP terminal. 041007 0\0.1 0.6 1.1 2.8 0.13 1.6 0.950.95 2.9 0.4@ Out line @VS AC BRP COUT DGND EVCC 201 P 2 3 6 5 4 PIN CONFIGURATION UnitF GND C delay OUT VS VCC RP
Multi-Function Transistor RT8g012b Bipolar voltage detector ABSOLUTE MAXIMUM RATINGS@(Ta=25 Unless otherwise noted) ELECTRICAL CHARACTERISTICS@(Vcc=5V , Ta=25@Unless otherwise noted) Min Typ Max -0.3 VCC -0.3 7 041007 VOUT=5V 0.4 V0.2 1u A Vs/¢TDetecting voltage temperature coefficient Icd Constant current at Cd pin Input voltage range 250 uA %/ -55 -30 uA nA500IIN VS=1.25V 30 45 Input current 0.02 ¢VS VIN V Detecting voltage Hysterisis voltage V 1.15 1.2 1.25 VVS Vcc Symbol Test condition Rp=47k¶Circuit currentICC UnitParameter Limits TSTG Storage temperature -40\{150 200 mW TOPR Operating temperature -20\+75 PD Power Dissipation V IOUT Output sink current 20 mA VOUT Output voltage Vcc Unit Vcc Supply@voltage 37 V Symbol Parameter Ratings V2 Supply@voltage 36 IOL Output leakage current VCC VV VCCVV Tpd Delay timeFVOUT@L¨H Cd=0.1uF Output saturation voltage Rp=47k¶AIL=3mAVo(sat) -80 2.4 130
Multi-Function Transistor RT8g012b Bipolar voltage detector APPLICATION CIRCUIT EXAMPLE TYPICAL CHARACTERISTICS 041007 delay Vcc OUT VS RP Cd C RPVcc GND CIRCUIT CURRENT VS SUPPLY VOLTAGE 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80 2.00 0 5 10 15 20 25 30 35 40 SUPPLY VOLTAGE iVj CIRCUIT CURRENT imAj RP=22K RP=47K RP=100K RP=360K DETECTING VOLTAGE VS SUPPLY VOLTAGE iIRPà100uA,ILà5mAj 1.16 1.17 1.18 1.19 1.2 1.21 1.22 1.23 1.24 1.25 0 1 02 03 04 0 SUPPLY VOLTAGE iV) DETECTING VOLTAGE@VsiV) VSH VSL RPFResistance which sets up output current capability CdFDelay capacitor RL The@detecting supply voltage iTypj1.2 ~R1{R2 R2 V
Multi-Function Transistor RT8g012b Bipolar voltage detector 041007 DELAY TIME VS DELAY CAPACITANCE 0.1 100 1000 10000 100000 1000000 1E-10 1E-09 1E-08 1E-07 1E-06 0.00001 DELAY CAPACITANCE (F) DELAY TIME (us) VOUT=L¨H VOUT=H¨L VCC=5VATa=25 OUTPUT SATURATION VOLTAGE VS OUTPUT SINK CURRENT 0.5 1.5 2.5 3.5 0 5 10 15 20 25 30 OUTPUT SINK CURRENT (mA) OUTPUT SATURATION VOLTAGE iV) RP=360K RP=100K RP=51KRP=30K RP=10K VCC=5VATa=25 LOW SUPPLY VOLTAGE VS OUTPUT VOLTAGE (RP=100k ¶) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 SUPPLY VOLTAGE iVj OUTPUT VOLTAGE iVj RL=2.2K RL=22K VCC=5VATa=25 LOW SUPPLY VOLTAGE VS OUTPUT VOLTAGE (RP=360k¶) 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 SUPPLY VOLTAGE iVj OUTPUT VOLTAGE iVj RL=5.1K RL=51K VCC=5VATa=25 DETECTING VOLTAGE VS AMBIENT TEMPERATURE 1.15 1.16 1.17 1.18 1.19 1.2 1.21 1.22 1.23 1.24 1.25 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Taij DETECTING VOLTAGE@VSL iVj Vcc=5V Vcc=10V Vcc=3V HYSTERISIS VOLTAGE VS AMBIENT TEMPERATURE 0.01 0.02 0.03 0.04 0.05 0.06 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Taij HYSTERISYS VOLTAGE ¢Vs iVj Vcc=10V Vcc=5V Vcc=3V
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