M57161L-01

M57161L-01 ISAHAYA | Alldatasheet

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Technical content

Hybrid IC for driving IGBT modules) DESCRIPTION OUTLINE DRAWING Di ions: MS57161L—01 is a hybrid IC designed to drive trench-gate IGBT imensions: mm modules with built-in RTC. This device can operate only by a k—=rar—+| power supply that has an output of +15V, because of both | | electrical isolation between the input and output by an opto coupler and a built-in DC-DC converter. 3 With built-in protection circuits, this device can maintain a 2 reverse bias for a predetermined time after the detection of 8 | overcurrent or short circuit. Therefore, the protective system | iii iy ily _s operates with a margin of time. i TL The overcurrent detection system functions only by the direct 4.5MAX| 11.0MAX| connection between the gate terminal of IGBT and the detection Bpenre°71 12 <5 45,0MAX terminal of M57161L-01 without high-voltage proof /high-speed | @ a. diodes and protective Zener diodes for the system to monitor [8.9MAX the collector voltage of IGBT, because of the builtin RTC circuits to detect a drop in gate voltage. Recommended module: IGBT module with built-in RTC circuit (Mitsubishi F series)

FEATURES

sInsulated type DC-DC converter built-in for a gate drive. sHigh CMR opto-coupler built-in. Over current (short-circuit) protector built-in (with timer-operated circuit and reset circuit) «Capability of adjusting time to control over current (short-circuit) detection +Input-output isolation voltage: 2500Vrms for 1 min

APPLICATIONS

To drive IGBT modules for UPS, inverters, AC servo systems, PCs and so on. BLOCK DIAGRAM 49) Vee (@) | \\Vcc DETECTION a ‘CONSTANT CIRCUIT pc-ac TIMER > VOLTAGE Voc ERROR (@) ‘c CONTROL PIN CONVERTER CIRCUIT DETECTION CIRCUIT (@3) DETECT GATE ©) VOLTAGE ° fo a ® ANN — | i INTERFACE Ve | oe De. 1 + ERROR SIGNAL (24) IOPTO - COUPLER: ouTpuT (27) FAULT (© CIRCUIT OUTPUT ® vee

Hybrid IC for driving |GBT modules MAXIMUM RATINGS (unless otherwise noted, Ta=25°C) [seme [Parmer contre | atros | vt [vo [svoniyvotage Pe Fee een Output current Pulse width tps, f < 20kHz [er [cactenmauni[Satesmmeatctnesontrneniered | |_| [er [eoetnpenues [sete nesters nsonermninand [a | | i a Ce [renner [tiwaumwaaron |e | a

ELECTRICAL CHARACTERISTICS

(Unless otherwise noted, Ta=25°C, Vp=15V, Vin = 5.0V, f = 20kHz, Re = 2.20, Load: CM600HU-24F) [ve [rari cnnimyome [Renews a [ao [as | | i a ee i ve [eons arenseow is Pes Pe [| a i en [ireommnimine ———idarwemer@re OP es Do fw | a i ee a a Pi [retsannaet ————veoonatzmaeame—[ = |= | = | ot [&[stercreutarion any ine [Papper ern | | | oo | | a a [Te fowranereiamieiie [veer || | | (*) If GBT modules are directly driven, there is a possibility that switching frequency becomes below 20kHz. al

HYBRID IC. Hybrid IC for driving IGBT modules ee A APPRICATION CIRCUIT 1. Direct driving ® @) | CM600HU-24F 4| Ctrip \\ | Vb Prd 28) [Rte |}, Vp = 15V25% (34 M57161L ® 4T0pF ce. -01 =| l i Lo @) 77 Ry=2.2 or more Ctrip : Refer to next page. Vin = 5Vi5% ° Viv 6) (8) © >It Control signal. o—fSo lal 4702 | 2. Additional transistor for output current 4.7kQ ‘CM600HU-24F (Parallel connection) [Circuit Circuit |}; Vp = 15V45% (3)4M57161L ® i -01 my Lo @ "2 = i; 3 {| Vin = 5V45% Vy © © ®) +] co- (i?) ro? Ror0~229 The maximum switching frequency in Cot, Co-: More than 1000pF this example: 10kHz or less @ (Please use an electrolytic capacitor with (a) ripple current admissible for output peak current) Co: below 104F ; Film capacitor (The connection to decrease the peak of ripple current. Please set an adequate capacitance based on your evaluation of vs mounting and/or assembly.

Hybrid IC for driving IGBT modules SS OVER-CURRENT PROTECTION CIRCUIT 1, The VGE error detect circuit operates when an input signal is in the state of “H”. | 2. Aneerror judgment is made when VGE becomes below VSC(=11V:Min.). 3. The VGE error detect circuit does not function until the time when the gate voltage reaches VSC(=13V).The tc(=2.2 4s) of controlled time detect short circuit is set in order to ensure the tum-on of IGBT modules. 4, Ifa rise time of gate voltage is longer than 2.2 1s, the tc need to be adjusted by connecting a capacitor (Ctrip) between pins 28 and 18.Please refer to " tc, td -Ctrip characteristics “ on this page. 5. The tds a delay time due to signal transmission of each protection circuit. 6. If short-circuit current flows at tum-on, the controlled time detect short circuit (tc)is included to the td of short-circuit protect delay time. The td can be changed through Ctrip. As a gate shutdown of IGBT modules within 10 ys is recommended, Ctrip should be below 220 PF in order to set the maximum of td below 101s. In addition, td changes with circumference temperature. Since td gose up for about 1.0 1s when the ambient temperature of driver rises to 60°C, It recommends adjusting Ctrip to 220 pF or less. ADJUSTIMENT METHOD WHEN USING Ctrip tc can be calculable by the following formula. te = 14.4 (Ctrip + 15)/1000 + 2.1 (us) The unit of Ctrip is “pF”. | It is necessary to make a gate detection pin (pin 29) opening and to observe Vce of IGBT module at the time of turn-on, and the output (pin 23) of this Hybrid IC. Measure time (ton: ys) after the output of this Hybrid IC becomes 11V until Veg becomes 12V, and if that time is larger than te, lengthen te. When time which added the margin for 1.5ys from ton is set to t,, the minimum of Ctrip (Ctrip/min) is calculable by the following formula. Ctrip/min = 1000 (ton - 0.6) /14.4-15 (pF) | In addition, the minimum of Ctrip can also be calculated from the te, ty - Ctrip characteristic graph of the following figure. | © to, ty - Ctrip characteristics | —$ : 2) a Re = 2.22 | Timer Voe error S Bq [| Load:cmeoonu-24F seu detection Ctrip iad Ve = 11.0V circuit circuit i) @< Ta=25°C — £ gr 66) g > | td 8 3” f gc tc bu CEs. : LET 3 i Interface Vo 23 circuit @ [| ae = Pas RTC Bs | Error signal 4) co 83, ae en loutput circuit raw cireui| |] 5 5 | db &&,;— |, — 2 | fame Teel Veo ATOR Ca) 0 400 200 300 400 Fay Ctrip (nF) | el 4 |

Hybrid IC for driving IGBT modules ee ee CONTROL OF IGBT MODULE DRIVER The timing chart for control of IGBT module drivers with electrical isolation between the input and output is as follows: (1)Poweron (2) Normal function start (3) Occurrence of over-current or (6) Control signal: ' ft 1 , Protection circuit is j fl | short-circuit current Cancelled i H i Ve <11V ' i i 1 (4) te (Ve <11V) H 1g ems | H t 1 Error detection H > b=: (6) Fault output | H i H |} pin 27: *L" level | Timing figure of the protection operation. (Occurrence of over-current or short-circuit) ‘Supplementary explanation of a timing figure (1) When Vcc is within 10 to 15 voltages, short-circuit detect output (VFO) is in the low state. The output voltage remains in the low state for 3 to 6 ms. If the power supply is applied in the high state of input signal, the output (Vo) remains in the low state. But VFO becomes in the low state for 3 to 6 ms. After normal function starts, if Vec is below the start voltage of protection circuit (typ. 15.2V), VFO is low and Vo is low voltage for the same period. (2) After VFO retums to high level, control signal should be applied. (3) If over-current or short-circuit current flows between the collector and emitter of IGBT modules, the intemal RTC circuit pulls the gate voltage down below 11V. (4) When the turn-on of IGBT coincides with over-current or short-circuit current, the timer circuit functions after tc. (5) After td from the short-circuit or over-current, the output voltage of Vo is low and VFO is low voltage at the same time. The output remains low during the operating time of timer circuit regardless of input signals. (6) After timer VFO returns to high voltage, if the input signal is low level (more than 5 1s), then the protection function is cancelled. i

Hybrid IC for driving |GBT modules TYPICAL CHARACTERISTICS t PLH, t PHL vs. Ta CHARACTERISTICS (TYPICAL) 4PLH, tPHL vs. VI CHARACTERISTICS (TYPICAL) 3.0 30 Vvo=15V a3 VD=15V aa RG=229 SS RG=22Q SS 25 F-vin=sv EF 25 [-Ta:25°C

2 Fa LOAD: CM60OHU-24F || ee LOAD : CM600HU-24F | |

ee | Fy 20 TE 20 oe ww FA i a

15 Ry 15

ae | | 88 10 —— ge) et ETI git ilel | / || | 00 00 -40 20 0 20 40 60 80 30 49 5.0 60 710 AMBIENT TEMPERATURE Ta(°C) INPUT SIGNAL VOLTAGE VI(V) td Vs. Ta CHARACTERISTICS td vs. Ctrip CHARACTERISTICS (TYPICAL) (TYPICAL) 14 14 12, -Vsc=11V 12 LYsc=11v z z Ta= 25°C 2 10 : 2 E = = 10 abe oe | ea ae Es gy 8 CC —f BE oo < fe.( Co et | ogg a fs} — = 2 6 b& ea 4 eB 4 sELTT ‘ je -40 -20 0 20 40 60 80 ° 100 200 300 400 AMBIENT TEMPERATURE Ta(°C) CONNECTIVE CAPACISTANCE Ctrip (pF) (Pin28-18) Idrive - Ta CHARACTERISTICS (MAXIMUM RATING) DISSIPATION CURRENT vs. SUPPLY VOLTAGE. 0.30 (TYPICAL) VD=15V | ‘ 120 5 RG+2.29 | Ta=25°C |X _ 0.25 Froad : 04 yF — INPUT SIGNAL “H” 3 | gi” $ || = Fal | | y INPUT SIGNAL “L” 3 | 3% 0.10 > —— 2 «0 6 < 0.00 - 0 | || 0 20 40 60 80 100 12 13 14 18 16 7 AMBIENT TEMPERATURE Ta (°C) SUPPLY VOLTAGE VD (V) eel

Hybrid IC for driving IGBT modules 6. Correspondence example to RTC circuit To initial charge with the stray capacity of the RTC circuit, the rising time of the gate voltage becomes twice or more. This phenomenon lengthens the short-circuit protection delay time on the Ctrip setting. Moreover, if the gate resistance is set to improving, the case that cannot be used is caused by the maximum limit of Ctrip. To evade this, a preliminary pulse to charge each gate with the stray capacity of the RTC circuit before IGBT is really operated is given. _ Even if each IGBT before it begins to operate really is turned on to the concrete example of a preliminary pulse, the gate control pulse of 2, s to { to(min) - 1.0}, s is sequentially input to each driver at intervals of 20, s or more in the state of a main circuit so as not to influence, and it is 2, s to to(min) , s “H" giving the output voltage, and it is at .each IGBT1 element... gate in order the method of charging with Cf of the RTC circuit. Because the input signal is assumed to be “L" to impress the gate pulse of tc or less to the driver before the protection operation starts even if the rise time at the gate is large, it never shifts to the protection operation. Because tc can be set with trG at the switching, an increase in the protection delay time can be reduced usually. The examination that lowers the gate resistance until becoming Ctrip=220pF is necessary when becoming Ctrip>220pF after measures of a preliminary pulse. —_— eee

Hybrid IC for driving IGBT modules FOR SAFETY USING Great detail and careful attention are given to the production activity of Hics, such as the development, the quality of production, and in it's reliability. However the reliability of Hics depends not only on their own factors but also in their condition of usage. When handling Hics, please note the following cautions. CAUTIONS Packing The materials used in packing Hics can only withstand normal external conditions. When exposed to outside shocks, rain and certain environmental contaminators, the packing materials will deteriorates. Please take care in handling. Carrying 1) Don't stack boxes too high. Avoid placing heavy materials on boxes. 2) Boxes must be positioned correctly during transportation to avoid breakage. 3) Don't throw or drop boxes. 4) Keep boxes dry. Avoid rain or snow. 5) Minimal vibration and shock during transportation is desirable. Storage When storing Hics, please observe the following notices or possible deterioration of their electrical characteristics, risk of solderability, and external damage may occur. 1) Devices must be stored where fluctuation of temperature and humidity is minimal, and must not be exposed to direct sunlight. Store at the normal temperature of 5 to 30 degrees Celsius with humidity at 40 to 60%. 2) Avoid locations where corrosive gasses are generated or where much dust accumulates. 3) Storage cases must be static proof. 4) Avoid putting weight on boxes. Extended storage When extended storage is necessary, Hics must be kept non-processed. When using Hics which have been stored for more than one year or under severe conditions, be sure to check that the exterior is free from flaw and other damages. Maximum ratings To prevent any electrical damages, use Hics within the maximum ratings. The temperaqture, current, voltage, etc. must not exceed these conditions. Polarity To protect Hics from destruction and deterioration due to wrong insertion, make sure of polarity in inserting leads into the board holes, conforming to the external view for the terminal arrangement.

Hybrid IC for driving IGBT modules ee Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! « ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. Notes regarding these materials * These materials are intended as a reference to assist our customers in the selection of the ISAHAYA products best suited to the customer's application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or a third party. + ISAHAYA Electronics Corporation assumes no responsibilty for any damage, or infringement of any third party's rights, originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. + All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed jerein. + ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. + The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. + If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is. prohibited, + Please contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for further details on these materials or the products contained therein. 10 Jul, 2004.