RB481K

RB481K JIANGSU | Alldatasheet

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-353 Plastic-Encap sulate Diodes RB481K SCHOTTLKY BARRIER DIODE

FEATURES

z Low current rectification z High reliability MARKING: 3U Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit Peak reverse voltage V RM 30 V DC reverse V R 30 V Non-repetitive Peak Forward Surge Current @t=8.3ms I FSM 1 A Mean rectifying current I O 0.2 A Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage V F 0.28 0.33 0.43 0.5 V I F =1mA I F =10mA I F =100mA I F =200mA Reverse current I R 30 μA V R =10V SOT-353 1 2 Junction temperature T j 125 ℃ Storage temperature T stg -55~+150 ℃ Power Dissipation Pd 150 mW Thermal Resistance Junction to Ambient R θJA 667 ℃/W 1 www.cj-elec.com E,Mar,2016

0.1 100 1000 T a =25 f=1MHz Capacitance Characteristics CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) 200 Forward Characteristics FORWARD VOLTAGE V F (V) FORWARD CURRENT I F (mA) T a =25 T a =100 Reverse Characteristics REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (uA) T a =25 T a =100 Typical Characteristics www.cj-elec.com 2 E,Mar,2016

SOT-353 Suggested Pad Layout www.cj-elec.com 3 Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP E,Mar,2016

www.cj-elec.com 4 E,Mar,2016