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TRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes R B 4 6 1 F SCHOTTKY BARRIER DIODE FEAT URES z Low-power rectification z For switching power supply z Ultra low VF z I F=0.7A guara nteed despite the size MARKING: 3B· Maximum Ratings @T a=25℃ Parameter Symbol Limit Unit Non- Repetitive Peak Reverse Voltage VRM 25 V DC Blocking Voltage VR 20 V Ave rage Rectified Output Current IO 700 mA Powe r Dissipation PD 150 mW Junction Temperature TJ 125 ℃ Sto rage Temperature Range TSTG -55 ~+150 ℃ ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reve rse breakdown voltage V(BR) IR= 200μA 20 V Reve rse voltage leakage current IR V R=20V 200 μA For ward voltage VF I F=700mA 0.49 V SOT-323 1 D,Oct,2015www.cj-elec.com Solid dot = Green molding compound device,if none, the normal device.
0.1 100 1000 10000 Ta=25℃ f=1MH z Capaci tance Characteristics CAPACITANCE BETWEEN TE RMINALS CT (pF) REVERSE VOLTAGE VR (V) Powe r Derating Curve POWER DISSIPATION PD (mW) AMBIENT TE MPERATURE Ta ( )℃ Forw ard Characteristics FORWARD VO LTAGE VF (mV) FORWARD CURRENT IF (mA) Ta=2 Ta=100 ℃ 700 Reve rse Characteristics REVERSE VOLTAGE VR (V) REVERSE CURRENT IR (uA) Ta=25 ℃ Ta=100 ℃ Typical Characteristics www.cj-elec.com 2 D,Oct,2015
A 0. 900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP SOT-323 Suggested Pad Layout www.cj-elec.com 3 A,Jun,2014www.cj-elec.com D,Oct,2015
www.cj-elec.com 4 A,Jun,2014www.cj-elec.com D,Oct,2015