PS9924-Y-AX

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 16

Technical content

41 fo 1 egaP 00.1.veR 0010JE9500SD80R Jun 28, 2013 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. Preliminary Data Sheet PS9924 HIGH CMR, 10 Mbps OPEN COLLECTOR OUTPUT TYPE, 8-PIN LSDIP PHOTOCOUPLER FOR CREEPAGE DISTANCE OF 14.5 mm

DESCRIPTION

The PS9924 is an optical coupled high-speed, active low type isolator containing a GaAlAs LED on the input side and a photodiode and a signal processing circuit on the output side on one chip.

FEATURES

• Long creepage distance (14.5 mm MIN.)
• High common mode transient immunity (CMH, CML = ±15 kV/μs MIN.)
• High-speed response (tPHL = 100 ns MAX., tPLH = 100 ns MAX.)
• Low power consumption (VCC = 3.3/5V)
• 8-pin LSDIP (Long Creepage SDIP) type
• Embossed tape product: PS9924-F3: 1 000 pcs/reel
• Pb-Free and Halogen Free product
• Safety standards
• UL approved: No. E72422
• CSA approved: No. CA 101391 (CA5A, CAN/CSA-C22.2 60065, 60950)
• SEMKO approved (EN 60065, EN 60950)
• DIN EN 60747-5-5 (VDE 0884-5) approved (Option)

APPLICATIONS

• Industrial inverter
• Solar inverter R08DS0059EJ0100 Rev.1.00 Jun 28, 2013 PIN CONNECTION (Top View) 1. NC 2. Anode 3. Cathode 4. NC 5. GND 6. VO 7. NC 8. VCC 8 7 6 5 1 2 3 4 SHIELD A Business Par tner of Renesas Electronics Corporation.

R08DS0059EJ0100 Rev.1.00 Page 2 of 14 Jun 28, 2013 PACKAGE DIMENSIONS (UNIT: mm) 16.7±0.4 0.8±0.25 0.2±0.15 0.25±0.15 3.5±0.2 3.7±0.25 1.27 0.5±0.1 0.25 M 6.7±0.3 13.8±0.3 PHOTOCOUPLER CONSTRUCTION Parameter MIN. Air Distance 14.5 mm Creepage Distance 14.5 mm Isolation Distance 0.4 mm A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 3 of 14 Jun 28, 2013 BLOCK DIAGRAM MARKING EXAMPLE 9924 R N231

2 N31

No. 1 pin Mark Year Assembled (Last 1 Digit) Rank Code Week Assembled Assembly Lot Type Number Company Initial LED Output ON L OFF H SHIELD A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 4 of 14 Jun 28, 2013

ORDERING INFORMATION

Part Number Order Number Solder Plating Specification Packing Style Safety Standard Approval Application Part Number*1 PS9924 PS9924-Y-AX 10 pcs (Tape 10 pcs cut) Embossed Tape 1 000 PS9924-F3 PS9924-Y-F3-AX pcs/reel Standard products (UL, CSA, SEMKO approved) PS9924-V PS9924-Y-V-AX 10 pcs (Tape 10 pcs cut) Embossed Tape 1 000 PS9924-V-F3 PS9924-Y-V-F3-AX Pb-Free and Halogen Free (Ni/Pd/Au) pcs/reel DIN EN 60747-5-5 (VDE 0884-5) approved (Option) PS9924 Note: *1. For the application of the Safety Standard, following part number should be used. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Symbol Ratings Unit Diode Forward Current I F 25 mA Reverse Voltage VR 5 V Power Dissipation*1 P D 45 mW Detector Supply Voltage V CC 7 V Output Voltage V O 7 V Output Current I O 25 mA Power Dissipation *2 P C 250 mW Isolation Voltage *3 BV 7 500 Vr.m.s. Operating Ambient Temperature T A −40 to +110 °C Storage Temperature Tstg −55 to +125 °C Notes: *1. Reduced to 0.8 mW/°C at T A = 85°C or more. *2. Reduced to 5.2 mW/ °C at TA = 85°C or more. *3 AC voltage for 1 minute at T A = 25°C, RH = 60% between input and output. Pins 1-4 shorted together, 5-8 shorted together. RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Low Level Forward Voltage V F(OFF) −2 0.8 V High Level Forward Current IF(ON) 8 10 12 mA Supply Voltage VCC 2.7 5.5 V Pull-up Resistor RL 330 4k Ω A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 5 of 14 Jun 28, 2013 ELECTRICAL CHARACTERISTICS (TA = −40 to +110°C, unless otherwise specified) Parameter Symbol Conditions MIN. TYP.*1 MAX. Unit Diode Forward Voltage V F I F = 10 mA, TA = 25°C 1.3 1.56 1.8 V Reverse Current I R V R = 3 V, TA = 25°C 10 μA Terminal Capacitance C t f = 1 MHz, V F = 0 V, TA = 25°C 30 pF Detector V CC = VO = 3.3 V, VF = 0.8 V 1 80 High Level Output Current I OH VCC = VO = 5.5 V, VF = 0.8 V 1 100 μA V CC = 3.3 V, IF = 10 mA, IOL = 13 mA Low Level Output Voltage V OL VCC = 5.5 V, IF = 10 mA, IOL = 13 mA 0.2 0.6 V V CC = 3.3 V, IF = 0 mA, VO = open 2 7 High Level Supply Current I CCH VCC = 5.5 V, IF = 0 mA, VO = open 3 7 mA V CC = 3.3 V, IF = 10 mA, VO = open 4 10 Low Level Supply Current I CCL VCC = 5.5 V, IF = 10 mA, VO = open 5 10 mA VCC = 3.3 V, RL = 350 Ω, VO = 0.8 V Coupled Threshold Input Voltage (H → L) IFHL VCC = 5.0 V, RL = 350 Ω, VO = 0.8 V 2 5 mA Isolation Resistance R I-O V I-O = 1 kVDC, RH = 40 to 60% 10 11 Ω Isolation Capacitance C I-O V I-O = 0 V, f = 1 MHz, TA = 25°C 1.0 pF TA = 25°C 45 75 VCC = 3.3 V, IF = 10 mA, RL = 350 Ω, CL = 15 pF TA = −40°Ct o 110°C 100 TA = 25°C 45 75 Propagation Delay Time (H → L) *2 tPHL VCC = 5 V, IF = 10 mA, RL = 350 Ω, CL = 15 pF TA = −40°Ct o 110°C 100 ns TA = 25°C 40 75 VCC = 3.3 V, IF = 10 mA, RL = 350 Ω, CL = 15 pF TA = −40°C to 110°C 100 TA = 25°C 40 75 Propagation Delay Time (L → H) tPLH VCC = 5 V, IF = 10 mA, RL = 350 Ω, CL = 15 pF TA = −40°Ct o 110°C 100 ns Pulse Width Distortion (PWD)*2 ⏐tPHL-tPLH⏐ 5 35 Propagation Delay Skew tpsk 40 Rise Time*2 tr 20 Fall Time*2 tf VCC = 3.3/5 V, IF = 10 mA, RL = 350 Ω, CL = 15 pF ns Common Mode Transient Immunity at High Level Output*3 CMH V CC = 3.3/5 V, IF = 0 mA, VO > 2 V, RL = 350 Ω, VCM = 1 kV, TA = 25°C 15 20 kV/ μs Common Mode Transient Immunity at Low Level Output CML V CC = 3.3/5 V, IF = 10 mA, VO < 0.8 V, RL = 350 Ω, VCM = 1 kV, TA = 25°C 15 20 kV/ μs <R> A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 6 of 14 Jun 28, 2013 Notes: *1. Typical values at T A = 25°C *2. Test circuit for propagation delay time *3. Test circuit for common mode transient immunity SHIELD Remark CL includes probe and stray wiring capacitance. Pulse input (IF) 47 Ω (PW = 1 s, Duty cycle = 1/10) μ RL = 350 Ω VO (Monitor) Input (Monitor) 0.1 F μ CL = 15 pF VCC = 3.3 V VCC = 5 V Remark CL includes probe and stray wiring capacitance. 90% 10% 1 kV VOH 0 V 2 V 0.8 V VOL VCM tr tf VO IF (OFF) VO IF (ON) SHIELD RL = 350 Ω CL = 15 pF VO (Monitor) 0.1 Fμ VCM = 1 kV SW I F VCC = 3.3 V VCC = 5 V + − Input Output tPHL tPLH IF (ON) 50% 1.5 V VOL IF VOUT 90% 10% tf tr 90% 10% A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 7 of 14 Jun 28, 2013 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) Ambient Temperature TA (°C) Maximum Forward Current IF (mA) MAXIMUM FORWARD CURRENT vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Detector Power Dissipation PC (mW) 25 50 75 1251000 25 50 75 100 125 1100 300 250 200 150 100 Forward Current I F (mA) Output Voltage VO (V) OUTPUT VOLTAGE vs. FORWARD CURRENT 1024 35 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Forward Voltage V F (V) Forward Current IF (mA) 1.0 0.01 0.1 100 1.2 2.0 +110°C +100°C +85°C +50°C +25°C −20°C −40°C 110 0 1.4 1.6 1.8 Ambient Temperature TA (°C) High Level Supply Current ICCH (mA), Low Level Supply Current ICCL (mA) −25 0 25 50 100 75−50 0 125 ICCL (IF = 10 mA), VCC = 5.5 V ICCL (IF = 10 mA), VCC = 3.3 V ICCH (IF = 0 mA), VCC = 3.3 V ICCH (IF = 0 mA), VCC = 5.5 V Forward Current IF (mA) Output Voltage VO (V) OUTPUT VOLTAGE vs. FORWARD CURRENT 1024 35 VCC = 5.5 VVCC = 3.3 V FORWARD CURRENT vs. FORWARD VOLTAGE DETECTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE SUPPLY CURRENT vs. AMBIENT TEMPERATURE RL = 350 Ω RL = 1.0 kΩ RL = 4.0 kΩ RL = 350 Ω RL = 1.0 kΩ RL = 4.0 kΩ Remark The graphs indicate nominal characteristics. <R> A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 8 of 14 Jun 28, 2013 Low Level Output Voltage VOL (V) LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE 0.5 0.4 0.3 0.2 0.1 0.0 Ambient Temperature TA (°C) −25 0 25 50 100 75−50 125 Low Level Output Voltage VOL (V) 0.5 0.4 0.3 0.2 0.1 0.0 Ambient Temperature TA (°C) −25 0 25 50 100 75−50 125 LOW LEVEL OUTPUT VOLTAGE vs. AMBIENT TEMPERATURE Ambient Temperature TA (°C) Threshold Input Current IFHL (mA) 5.0 4.0 3.0 2.0 1.0 VO = 0.8 V −25 0 25 50 100 75−50 125 Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATURE 100 V CC = 5.0 V, IF = 10 mA, RL = 350 Ω PWD tPLH tPHL Ambient Temperature TA (°C) −25 0 25 50 100 75−50 125 Propagation Delay Time tPHL, tPLH (ns), Pulse Width Distortion (PWD) tPHL – tPLH (ns) PROPAGATION DELAY TIME, PULSE WIDTH DISTORTION vs. AMBIENT TEMPERATURE 100 V CC = 3.3 V, IF = 10 mA, RL = 350 Ω PWD tPLH tPHL Ambient Temperature TA (°C) −25 0 25 50 100 75−50 125 IOL = 16 mA IOL = 13 mA IOL = 6 mA IOL = 10 mA VCC = 3.3 V, IF = 10 mA IOL = 16 mA IOL = 13 mA IOL = 6 mA IOL = 10 mA VCC = 5.5 V, IF = 10 mA VCC = 5.0 V VCC = 3.3 V THRESHOLD INPUT CURRENT vs. AMBIENT TEMPERATURE Remark The graphs indicate nominal characteristics. A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 9 of 14 Jun 28, 2013 PROPAGATION DELAY TIME vs. FORWARD CURRENT Forward Current IF (mA) Propagation Delay Time tPHL, tPLH (ns) 51 0 2 0 2 5 100 V CC = 5.0 V, RL = 350 Ω tPHL tPLH Forward Current IF (mA) Propagation Delay Time tPHL, tPLH (ns) 51 0 2 0 2 5 100 V CC = 3.3 V, RL = 350 Ω tPHL tPLH PROPAGATION DELAY TIME vs. FORWARD CURRENT Remark The graphs indicate nominal characteristics. A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 10 of 14 Jun 28, 2013 TAPING SPECIFICATIONS (UNIT: mm) Tape Direction Outline and Dimensions (Reel) Packing: 1 000 pcs/reel 330±2.0 100±1.0 2.0±0.5 13.0±0.2 R 1.0 21.0±0.8 2.0±0.5 25.5±1.0 29.5±1.0 PS9924-F3 2.0±0.1 4.0±0.1 1.75±0.1 24.0±0.3 1.5 +0.1 –0 4.5 MAX. (17.2) (0.3) 11.5±0.1 Outline and Dimensions (Tape) (7.2) (4.05) 12.0±0.1 2.0±0.2 A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 11 of 14 Jun 28, 2013 RECOMMENDED MOUNT PAD DIMENSIONS (UNIT: mm) 0.91.27 16.6 A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 12 of 14 Jun 28, 2013 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering

• Peak reflow temperature 260 °C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120± 30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) 120±30 s (preheating) 220°C 180°C Package Surface Temperature T (°C) Time (s) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s to 60 s 260°C MAX. 120°C (2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120 °C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by Soldering Iron
• Peak Temperature (lead part temperature) 350 °C or below
• Time (each pins) 3 seconds or less
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 13 of 14 Jun 28, 2013 (4) Cautions

• Fluxes Avoid removing the residual flux with fr eon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied s uddenly between the photocoupler’s input and ou tput at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. USAGE CAUTIONS 1. This product is weak for static electricity by designed with high-speed integrated circuit so protect against static electricity when handling. 2. By-pass capacitor of more than 0.1 μF is used between VCC and GND near device. Also, ensure that the distance between the leads of the photocoupler and capacitor is no more than 10 mm. 3. Pin 1, 4 (which is an NC *1 pin) can either be connected directly to the GND pin on the LED side or left open. Also, Pin 7 (which is an NC*1 pin) can either be connected directly to the GND pin on the detector side or left open. Unconnected pins should not be used as a bypass for signals or for any other similar purpose because this may degrade the internal noise environment of the device. Note: *1. NC: Non-Connection (No Connection). 4. Avoid storage at a high temperature and high humidity. A Busine ss Par tner of Renesas Electro nics Corpora tion.

R08DS0059EJ0100 Rev.1.00 Page 14 of 14 Jun 28, 2013 Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth. A Busine ss Par tner of Renesas Electro nics Corpora tion.

All trademarks and registered trademarks are the property of their respective owners. C - 1 Rev. Date Page Summary

0.01 Apr 06, 2012 − First edition issued

1.00 Jun 28, 2013 p.5 Modification of ELECTRICAL CHARACTERISTICS pp.7 to 9 Addition of TYPICAL CHARACTERISTICS

1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics. 6. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com Refer to "http://www.renesas.com/" for the latest and detailed information. California Eastern Laboratories, Inc. 4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A. Renesas Electronics Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K Tel: +44-1628-651-700, Fax: +44-1628-651-804 Renesas Electronics Europe GmbH Arcadiastrasse 10, 40472 Düsseldorf, Germany Tel: +49-211-65030, Fax: +49-211-6503-1327 Renesas Electronics (China) Co., Ltd. 7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China Tel: +86-10-8235-1155, Fax: +86-10-8235-7679 Renesas Electronics (Shanghai) Co., Ltd. Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898 Renesas Electronics Hong Kong Limited Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong Tel: +852-2886-9318, Fax: +852 2886-9022/9044 Renesas Electronics Taiwan Co., Ltd. 13F, No. 363, Fu Shing North Road, Taipei, Taiwan Tel: +886-2-8175-9600, Fax: +886 2-8175-9670 Renesas Electronics Singapore Pte. Ltd.

80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949

Tel: +65-6213-0200, Fax: +65-6213-0300 Renesas Electronics Malaysia Sdn.Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Renesas Electronics Korea Co. , Ltd. 11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea SALES OFFICES © 2013 Renesas Electronics Corporation. All rig hts reserved. [Colophon 2.2]